1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications

1997 ◽  
Vol 28 (8-10) ◽  
pp. 947-955 ◽  
Author(s):  
Joseph Greenberg ◽  
Lester F. Eastman
1992 ◽  
Vol 7 (10) ◽  
pp. 773-778
Author(s):  
S. Narumi ◽  
S. Sudo ◽  
M. Aihara ◽  
H. Fukui

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