Effective work functions of polycrystalline refractory metals heated for thermal positive-ionic and electronic emissions

1997 ◽  
Vol 299 (1-2) ◽  
pp. 67-80 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Kiyohiko Funato ◽  
Seiji Matsui ◽  
Keiko Ogasawara ◽  
Hajime Kobayashi ◽  
...  
Keyword(s):  
Refractory Metals ◽  
Effective Work ◽  
Work Functions

Relationship between Effective Work Functions and Noise Powers of Emission Currents in Nickel-Deposited Field Emitters

1996 ◽  
Vol 35 (Part 2, No. 10A) ◽  
pp. L1297-L1300 ◽  
Author(s):  
Yasuhito Gotoh ◽  
Masayoshi Nagao ◽  
Motoki Matsubara ◽  
Kazunori Inoue ◽  
Hiroshi Tsuji ◽  
...  
Keyword(s):  
Effective Work ◽  
Field Emitters ◽  
Work Functions

Effective work functions for the evaporated metal/organic semiconductor contacts from in-situ diode flatband potential measurements

2012 ◽  
Vol 101 (1) ◽  
pp. 013501 ◽  
Author(s):  
Mi Zhou ◽  
Rui-Qi Png ◽  
Siong-Hee Khong ◽  
Sankaran Sivaramakrishnan ◽  
Li-Hong Zhao ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Effective Work ◽  
Metal Organic ◽  
Semiconductor Contacts ◽  
Work Functions

(Invited) Band-Edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS

2019 ◽  
Vol 35 (2) ◽  
pp. 285-295 ◽  
Author(s):  
Christopher Hinkle ◽  
Rohit Galatage ◽  
Richard Chapman ◽  
Eric Vogel ◽  
H. N. Alshareef ◽  
...  
Keyword(s):  
Band Edge ◽  
Effective Work ◽  
Interfacial Composition ◽  
Work Functions

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxides

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2196-2200 ◽  
Author(s):  
J.K. Schaeffer ◽  
D.C. Gilmer ◽  
C. Capasso ◽  
S. Kalpat ◽  
B. Taylor ◽  
...  
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Oxides ◽  
Effective Work ◽  
Gate Electrodes ◽  
Group Electronegativity ◽  
Work Functions

scholarly journals Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

2010 ◽  
Vol 96 (10) ◽  
pp. 103502 ◽  
Author(s):  
C. L. Hinkle ◽  
R. V. Galatage ◽  
R. A. Chapman ◽  
E. M. Vogel ◽  
H. N. Alshareef ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Effective Work ◽  
Induced Dipole ◽  
Work Functions ◽  
Interfacial Oxygen

Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

2007 ◽  
Vol 28 (6) ◽  
pp. 486-488 ◽  
Author(s):  
Lars-ke Ragnarsson ◽  
Vincent S. Chang ◽  
Hong Yu Yu ◽  
Hag-Ju Cho ◽  
Thierry Conard ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Effective Work ◽  
Work Functions

Work function change of Ni, HfO2 films and Ni/HfO2 interfaces as a function of external electric field

2015 ◽  
Vol 29 (23) ◽  
pp. 1550168 ◽  
Author(s):  
Kehua Zhong ◽  
Guigui Xu ◽  
Jianmin Zhang ◽  
Renyuan Liao ◽  
Zhigao Huang
Keyword(s):  
Electric Field ◽  
Work Function ◽  
External Electric Field ◽  
Density Functional ◽  
Functional Theory ◽  
Effective Work ◽  
Effective Work Function ◽  
Function Change ◽  
Variation Versus ◽  
Work Functions

In this paper, the effects of external electric field on the work functions for Ni(001), Ni(111), HfO2(001) and HfO2(111) films and the effective work functions for Ni(001)/HfO2(001) and Ni(111)/HfO2(111) interfaces were studied by first-principles methods based on density functional theory (DFT). It is found that the work functions for all the systems change linearly with the strength of external electric field. Comparing the slopes of the work function variation versus external electric field strength for Ni, HfO2 films and Ni/HfO2 interfaces, we have found that the response of the effective work function to external electric field for Ni/HfO2 interfaces is determined by the response of the HfO2 side to external electric field.

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