A theoretical investigation of the correlation between the arbitrarily defined optical gap energy and the chemical bond in Te46-xAs32+xGe10Si12 system

Vacuum ◽  
1999 ◽  
Vol 52 (4) ◽  
pp. 505-508 ◽  
Author(s):  
S.S. Fouad
Keyword(s):  
Chemical Bond ◽  
Theoretical Investigation ◽  
Gap Energy ◽  
Optical Gap ◽  
Optical Gap Energy

scholarly journals A Comparative Study the Calculation of the Optical Gap Energy and Urbach Energy in Undoped and Indium Doped ZnO Thin Films

2016 ◽  
Vol 8 (1) ◽  
pp. 01008-1-01008-5
Author(s):  
Said Benramache ◽  
◽  
Boubaker Benhaoua ◽  
Okba Belahssen ◽  
◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Urbach Energy ◽  
Zno Thin Films ◽  
Gap Energy ◽  
Optical Gap ◽  
Optical Gap Energy ◽  
Doped Zno

Preparation and Properties of Hydrogen Ated Amorphous Germanium Nitride a-GeNx:H

1997 ◽  
Vol 467 ◽  
Author(s):  
M. Hioki ◽  
S. Nitta ◽  
Y. Takeda ◽  
K. Yamamoto ◽  
M. Sasaki ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Outer Edge ◽  
Optical Absorption Coefficient ◽  
Gap Energy ◽  
Optical Gap ◽  
Light Yellow ◽  
Carbon Impurities ◽  
Optical Gap Energy ◽  
The Magnetic Field ◽  
Content Of Oxygen

ABSTRACTThe properties of a-GeNx:H films have been studied including the effects of oxygen and carbon impurities. The contamination of a-GeNx:H with oxygen and carbon is expressed as a-GeNx(OyCz):H, where x=N/Ge, y=O/Ge and z=C/Ge. The characteristics of a-GeNx(OyCz):H are summarized as follows: the sample is transparent at the center of a film, and the color of a film varies to light yellow and to brown at the outer edge depending on the magnetic field of the magnetron sputtering. The compositional ratios of the film vary from x=0.34 to 0.28, y=0.15 to 0.25 and z=0.05 to 0.02 at the center and at outer edge of a film, respectively. Optical gap energy EO5, obtained by the photon energy at optical absorption coefficient of 5×103 cm−1, are 2.9 eV at the center and 1.7 eV at the outer edge of a film. Eo5 increases with the nitrogen content x in a-GeNx(OyCz):H but is independent of the content of oxygen and carbon.

1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
M. Kechouane ◽  
N. Beldi ◽  
T. Mohammed-Brahim ◽  
H. L'Haridon ◽  
M. Salvi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Emission Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Measurement Temperature ◽  
Gap Energy ◽  
Optical Gap ◽  
Film Content ◽  
Optical Gap Energy ◽  
First Time ◽  
Hydrogenated Amorphous

AbstractThe luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. The Er+ emission intensity strongly depends on the hydrogen film content and on the measurement temperature. A direct correlation between the optical gap energy of the semiconductor and the hydrogen film content is observed.

1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
M. Kechouane ◽  
N. Beldi ◽  
T. Mohammed-Brahim ◽  
H. L'Haridon ◽  
M. Salvi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Emission Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Measurement Temperature ◽  
Gap Energy ◽  
Optical Gap ◽  
Film Content ◽  
Optical Gap Energy ◽  
First Time ◽  
Hydrogenated Amorphous

ABSTRACTThe luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. The Er+ emission intensity strongly depends on the hydrogen film content and on the measurement temperature. A direct correlation between the optical gap energy of the semiconductor and the hydrogen film content is observed.

scholarly journals The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

Open Physics ◽  
2016 ◽  
Vol 14 (1) ◽  
pp. 714-720 ◽  
Author(s):  
Said Benramache ◽  
Boubaker Benhaoua
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Deposition ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Zno Films ◽  
Gap Energy ◽  
Optical Gap ◽  
Optical Gap Energy ◽  
Doped Zno

AbstractIn this paper, a new mathematical model has been developed to calculate the optical properties of nano materials a function of their size and structure. ZnO has good characterizatics in optical, electrical, and structural crystallisation; We will demonstrate that the direct optical gap energy of ZnO films grown by US and SP spray deposition can be calculated by investigating the correlation between solution molarity, doping levels of doped films and their Urbache energy. A simulation model has been developed to calculate the optical band gap energy of undoped and Bi, Sn and Fe doped ZnO thin films. The measurements by thus proposed models are in agreement with experimental data, with high correlation coefficients in the range 0.94-0.99. The maximum calculated enhancement of the optical gap energy of Sn doped ZnO thin films is always higher than the enhancement attainable with an Fe doped film, where the minimum error was found for Bi and Sn doped ZnO thin films to be 2,345 and 3,072%, respectively. The decrease in the relative errors from undoped to doped films can be explained by the good optical properties which can be observed in the fewer number of defects as well as less disorder.

Photoluminescence from Nanoscale Si in a-SiOxMatrix

2000 ◽  
Vol 638 ◽  
Author(s):  
I. Umezu ◽  
K. Yoshida ◽  
M. Inada ◽  
A. Sugimura
Keyword(s):  
Film Structure ◽  
Photoemission Spectroscopy ◽  
Carrier Distribution ◽  
Xps Spectra ◽  
X Ray ◽  
Gap Energy ◽  
Optical Gap ◽  
Peak Energy ◽  
Optical Gap Energy ◽  
Increasing Temperature

AbstractWe prepared a-SiOx (x < 2.0) films by co-sputtering Si and SiO2 targets and found that these films included nano-scaled a-Si regions in a-SiOx matrix. The structure of the films was evaluated by X-ray photoemission spectroscopy (XPS) and infrared absorption. The XPS spectra in the a-SiOx films showed two Si 2p peaks around 99.6 and 104 eV. This indicates that the a-SiOx films were composed of Si and a-SiO2 regions. The optical gap energy of this system rapidly increased when x exceeded 0.7. The rapid increase in the optical gap of this system indicates the formation of nanometer sized Si islands. The photoluminescence (PL) peak energy of this material decreased with increasing temperature above 60 K when x was less than 0.7. On the other hand, when x exceeds 0.7, the PL peak energy increases with temperature above 60 K. The quenching of PL intensity also takes place at 60 K. These results indicate a film structure change at x = 0.7, and recombination path and carrier distribution changes at 60 K. A correlation between film structure and PL properties are discussed. PL properties in this system are explained by superposition of the PL peak from nanoscale Si and a-SiO2 matrix.

Sign in / Sign up

Export Citation Format

Share Document