Correlation between crystallite size–optical gap energy and precursor molarities of ZnO thin films

2014 ◽  
Vol 35 (4) ◽  
pp. 042001 ◽  
Author(s):  
S. Benramache ◽  
O. Belahssen ◽  
A. Guettaf ◽  
A. Arif
2016 ◽  
Vol 8 (1) ◽  
pp. 01008-1-01008-5
Author(s):  
Said Benramache ◽  
◽  
Boubaker Benhaoua ◽  
Okba Belahssen ◽  
◽  
...  

Open Physics ◽  
2016 ◽  
Vol 14 (1) ◽  
pp. 714-720 ◽  
Author(s):  
Said Benramache ◽  
Boubaker Benhaoua

AbstractIn this paper, a new mathematical model has been developed to calculate the optical properties of nano materials a function of their size and structure. ZnO has good characterizatics in optical, electrical, and structural crystallisation; We will demonstrate that the direct optical gap energy of ZnO films grown by US and SP spray deposition can be calculated by investigating the correlation between solution molarity, doping levels of doped films and their Urbache energy. A simulation model has been developed to calculate the optical band gap energy of undoped and Bi, Sn and Fe doped ZnO thin films. The measurements by thus proposed models are in agreement with experimental data, with high correlation coefficients in the range 0.94-0.99. The maximum calculated enhancement of the optical gap energy of Sn doped ZnO thin films is always higher than the enhancement attainable with an Fe doped film, where the minimum error was found for Bi and Sn doped ZnO thin films to be 2,345 and 3,072%, respectively. The decrease in the relative errors from undoped to doped films can be explained by the good optical properties which can be observed in the fewer number of defects as well as less disorder.


Optik ◽  
2015 ◽  
Vol 126 (15-16) ◽  
pp. 1487-1490 ◽  
Author(s):  
Okba Belahssen ◽  
Hachemi Ben Temam ◽  
Said Lakel ◽  
Boubaker Benhaoua ◽  
Said Benramache ◽  
...  

Sadhana ◽  
2019 ◽  
Vol 44 (1) ◽  
Author(s):  
Said Benramache ◽  
Yacine Aoun ◽  
Said Lakel ◽  
Boubaker Benhaoua ◽  
Chahrazed Torchi

Author(s):  
Sarika Vishvnbath Jadhav ◽  
Limbraj Sopan Ravangave

<p>Zinc Oxide (ZnO) thin films were deposited for five different molarity (M) of Zinc acetate hydrated (0.075, 0.1, 0.125, 0.15, 0.175 M) using simple spray technique to study the effect of zinc ion concentration on structure, morphology and optical properties. The XRD patterns of deposited ZnO thin films show hexagonal crystal structure with wurtzite symmetry. The effect of molarity on morphology was studied using scanning electron microscopy (SEM). The elemental analysis was studied by using energy dispersive X-ray analysis (EDX). The optical absorption was recorded by using systronics double beam spectrophotometer (2201). Crystallite size estimated from XRD data was in nanometre (nm) range; however, films deposited for 0.15 M zinc acetate show maximum crystallite size (66 nm) as compared to other samples. All the films show low absorption in wide range (340-999 nm) of electromagnetic spectrum. However, ZnO film deposited for 0.15 zinc acetate hydrated shows maximum blue shifting of absorption edge and higher band gap (3.8 eV) as compared to other samples.</p>


1997 ◽  
Vol 467 ◽  
Author(s):  
M. Hioki ◽  
S. Nitta ◽  
Y. Takeda ◽  
K. Yamamoto ◽  
M. Sasaki ◽  
...  

ABSTRACTThe properties of a-GeNx:H films have been studied including the effects of oxygen and carbon impurities. The contamination of a-GeNx:H with oxygen and carbon is expressed as a-GeNx(OyCz):H, where x=N/Ge, y=O/Ge and z=C/Ge. The characteristics of a-GeNx(OyCz):H are summarized as follows: the sample is transparent at the center of a film, and the color of a film varies to light yellow and to brown at the outer edge depending on the magnetic field of the magnetron sputtering. The compositional ratios of the film vary from x=0.34 to 0.28, y=0.15 to 0.25 and z=0.05 to 0.02 at the center and at outer edge of a film, respectively. Optical gap energy EO5, obtained by the photon energy at optical absorption coefficient of 5×103 cm−1, are 2.9 eV at the center and 1.7 eV at the outer edge of a film. Eo5 increases with the nitrogen content x in a-GeNx(OyCz):H but is independent of the content of oxygen and carbon.


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