Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition

1999 ◽  
Vol 48 (1-4) ◽  
pp. 211-214
Author(s):  
P. Masson ◽  
P. Morfouli ◽  
J.L. Autran ◽  
J.J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Chemical Vapor Deposition

Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition

1996 ◽  
Vol 79 (10) ◽  
pp. 8054-8059 ◽  
Author(s):  
Chien‐Jen Wang ◽  
Ming‐Shiann Feng ◽  
Shih‐Hsiung Chan ◽  
Chun‐Yen Chang ◽  
Janne‐Hua Wu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

scholarly journals Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Tin Film ◽  
Pressure Chemical
Sign in / Sign up

Export Citation Format

Share Document