Low-energy cluster ion beam modification of surfaces

Author(s):  
Isao Yamada
2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 707-712 ◽  
Author(s):  
Noriyuki Uchida ◽  
Leonid Bolotov ◽  
Toshihiko Kanayama

2019 ◽  
Vol 10 ◽  
pp. 135-143 ◽  
Author(s):  
Xiaomei Zeng ◽  
Vasiliy Pelenovich ◽  
Zhenguo Wang ◽  
Wenbin Zuo ◽  
Sergey Belykh ◽  
...  

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.


1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.


1991 ◽  
Vol 236 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White

AbstractIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.


1991 ◽  
Vol 235 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White

ABSTRACTIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.


2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.


1998 ◽  
Vol 253 (1-2) ◽  
pp. 249-257 ◽  
Author(s):  
I Yamada ◽  
J Matsuo ◽  
N Toyoda ◽  
T Aoki ◽  
E Jones ◽  
...  

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