Low Energy Ion Beam Modification of High Performance Polymer

1991 ◽  
Vol 236 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White
Keyword(s):  
High Performance ◽  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Chemical Compositions ◽  
Interface Chemistry ◽  
Damage Level ◽  
Ion Beam Modification ◽  
Control Interface ◽  
High Performance Polymer

AbstractIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.

Low Energy Ion Beam Modification of High Performance Polymer

1991 ◽  
Vol 235 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White
Keyword(s):  
High Performance ◽  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Chemical Compositions ◽  
Interface Chemistry ◽  
Damage Level ◽  
Ion Beam Modification ◽  
Control Interface ◽  
High Performance Polymer

ABSTRACTIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.

Composite Nanowires from Ion Beam Modification of Si Nanowires

1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  
Keyword(s):  
Reaction Pathway ◽  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Hydrogen Ions ◽  
Si Nanowires ◽  
Interacting Particles ◽  
Ion Beam Modification ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

Comparative study on low energy ion beam modification of thermoplastic polymers

2019 ◽  
Vol 174 (5-6) ◽  
pp. 406-418 ◽  
Author(s):  
P.M. Raveesha ◽  
K. Hareesh ◽  
S.D. Dhole ◽  
K. Asokan ◽  
Ganesh Sanjeev
Keyword(s):  
Comparative Study ◽  
Ion Beam ◽  
Low Energy ◽  
Thermoplastic Polymers ◽  
Ion Beam Modification

Effects of the Combined Exposure of Silicon to Beams of Low-Energy Argon Ions and Halogen-Containing Molecules

1984 ◽  
Vol 38 ◽  
Author(s):  
A. W. Kolfschoten
Keyword(s):  
Experimental Data ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Bombardment ◽  
Low Energy ◽  
Reactive System ◽  
Combined Exposure ◽  
Si Substrate ◽  
Model Based ◽  
Argon Ions

AbstractThis paper reviews our results of modulated ion beam studies of the ion-assisted etching of Si. It is shown that the experimental data of the Si(C12, Ar+) reactive system can be described by a model based upon an ion-bombardment induced amorphousness of the Si substrate and the formation of a mixed surface region of several atomic layers of chlorine, argon and silicon. It is also shown that the model is in general agreement with the experimental data of the Si(XeF2, Ar+) and C(H, Ar+) systems.

The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of N-GaAs.

1995 ◽  
Vol 396 ◽  
Author(s):  
W.F. Seng ◽  
P.A. Barnes ◽  
M.L. Lovejoy ◽  
L.P. Fu ◽  
G.D. Gilliland ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Ion Milling ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Contact Metallization ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Modification Of The Surface

AbstractLow energy neutral Ar ion-beam etching of n-GaAs was investigated as a possible “cleaning” procedure prior to contact metallization. The ion-beam source energy was varied between 35 eV and 1200 eV at a fixed current density of 1 mA/cm2. The effects of ion-milling on lightly doped n-GaAs were analyzed electrically by measuring current-voltage (IV) and capacitance-voltage (CV) characteristics of Schottky barriers formed after the ion-milling. The metal semiconductor barriers were prepared immediately following ion-milling without breaking vacuum. Photoluminescence and Rutherford Backscattering (RBS) were used to determine if any physical modification of the surface and near surface region of the ion-milled substrates had occurred.

Low energy ion-beam modification of TiO2 photocatalyst thin film for visible light absorption

2009 ◽  
Vol 203 (17-18) ◽  
pp. 2579-2583 ◽  
Author(s):  
R. Fernandes ◽  
N. Patel ◽  
R. Dholam ◽  
M. Adami ◽  
A. Miotello
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Light Absorption ◽  
Ion Beam ◽  
Low Energy ◽  
Tio2 Photocatalyst ◽  
Visible Light Absorption ◽  
Ion Beam Modification
Sign in / Sign up

Export Citation Format

Share Document