Noise performance of pixel readout electronics using very small area devices in CMOS technology

Author(s):  
C Kapnistis ◽  
K Misiakos ◽  
N Haralabidis
2013 ◽  
Vol 22 (08) ◽  
pp. 1350068
Author(s):  
XINSHENG WANG ◽  
YIZHE HU ◽  
LIANG HAN ◽  
JINGHU LI ◽  
CHENXU WANG ◽  
...  

Process and supply variations all have a large influence on current-mode signaling (CMS) circuits, limiting their application on the fields of high-speed low power communication over long on-chip interconnects. A variation-insensitive CMS scheme (CMS-Bias) was offered, employing a particular bias circuit to compensate the effects of variations, and was robust enough against inter-die and intra-die variations. In this paper, we studied in detail the principle of variation tolerance of the CMS circuit and proposed a more suitable bias circuit for it. The CMS-Bias with the proposed bias circuit (CMS-Proposed) can acquire the same variation tolerance but consume less energy, compared with CMS-Bias with the original bias circuit (CMS-Original). Both the CMS schemes were fabricated in 180 nm CMOS technology. Simulation and measured results indicate that the two CMS interconnect circuits have the similar signal propagation delay when driving signal over a 10 mm line, but the CMS-Proposed offers about 9% reduction in energy/bit and 7.2% reduction in energy-delay-product (EDP) over the CMS-Original. Simulation results show that the two CMS schemes only change about 5% in delay when suffering intra-die variations, and have the same robustness against inter-die variations. Both simulation and measurements all show that the proposed bias circuits, employing self-biasing structure, contribute to robustness against supply variations to some extent. Jitter analysis presents the two CMS schemes have the same noise performance.


2006 ◽  
Author(s):  
Patrick Merken ◽  
Tim Souverijns ◽  
Jan Putzeys ◽  
Ybe Creten ◽  
Chris Van Hoof

2009 ◽  
Vol 19 (06) ◽  
pp. 465-471 ◽  
Author(s):  
JOSEP L. ROSSELLO ◽  
VINCENT CANALS ◽  
ANTONI MORRO ◽  
JAUME VERD

A new design of Spiking Neural Networks is proposed and fabricated using a 0.35 μm CMOS technology. The architecture is based on the use of both digital and analog circuitry. The digital circuitry is dedicated to the inter-neuron communication while the analog part implements the internal non-linear behavior associated to spiking neurons. The main advantages of the proposed system are the small area of integration with respect to digital solutions, its implementation using a standard CMOS process only and the reliability of the inter-neuron communication.


2011 ◽  
Vol 3 (6) ◽  
pp. 627-631 ◽  
Author(s):  
Paolo Lucchi ◽  
Davide Dermit ◽  
Gilles Jacquemod ◽  
Jean Baptiste Begueret ◽  
Mattia Borgarino

This paper reports a 15 GHz quadrature voltage controlled oscillator (QVCO) designed in a 130 nm CMOS technology. The phase noise performance of the QVCO and of a phase locked loop (PLL) where the QVCO was inserted were compared with the literature and with telecom standards and commercial products for broadcast satellite applications.


2018 ◽  
Vol 27 (07) ◽  
pp. 1850111 ◽  
Author(s):  
J. J. Ocampo-Hidalgo ◽  
J. Alducín-Castillo ◽  
I. Vázquez-Álvarez ◽  
L. N. Oliva-Moreno ◽  
J. E. Molinar-Solís

A quasi-floating gate (QFG) “super-follower” is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5[Formula: see text][Formula: see text]m CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5[Formula: see text][Formula: see text]m CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10[Formula: see text]MHz and power consumption of 120[Formula: see text][Formula: see text]W with a 1.5[Formula: see text]V single supply.


2015 ◽  
Vol 25 (03) ◽  
pp. 1640019 ◽  
Author(s):  
Daniel Arbet ◽  
Gabriel Nagy ◽  
Martin Kováč ◽  
Viera Stopjaková

In this paper, a fully differential difference amplifier (FDDA) designed in 0.35[Formula: see text][Formula: see text]m CMOS technology is presented. The proposed amplifier reaches high dynamic range (DR) and low input referred noise. Comparison of noise performance of the proposed FDDA to an ordinary differential amplifier has been performed. Achieved results prove that the developed amplifier circuit can be advantageously used in applications that require a fully differential signal. Then, simulation results have been verified by the measurement of prototyped chips. In our work, the proposed amplifier was experimentally employed in the analog frontend of the readout interface (RI) for a Micro-Electro-Mechanical-Systems (MEMS) capacitive microphone.


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