Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
1999 ◽
Vol 150
(1-4)
◽
pp. 161-170
◽
1997 ◽
Vol 175-176
◽
pp. 1167-1172
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1998 ◽
Vol 16
(5)
◽
pp. 2650
◽
2008 ◽
Vol 39
(12)
◽
pp. 1521-1524
◽
Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
1998 ◽
Vol 187
(2)
◽
pp. 167-177
◽
1992 ◽
Vol 1
(2)
◽
pp. 59-64
◽
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