Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the Al-BSF is doped heavily. The effects of the dopincg profile in heavily-doped Al-BSF on electronic properties of n+pp+ monocrystalline solar cells were investigated by PC1D. The results show that the electronic properties of solar cells are almost independent of the doping profile of the Al-BSF, but are more or less affected by the BSF profile if the solar cell back surface is passivated well with the BSRV less than ~105cm/s. When the sheet resistance is about between 5 and 30Ω/□, the conversion efficiency can reach the maximum value. And the optimum thickness of Al-BSF is about between 10~15μm.

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Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile

Semiconductors ◽

10.1134/s1063782619020076 ◽

2019 ◽

Vol 53 (2) ◽

pp. 268-272 ◽

Cited By ~ 4

Author(s):

D. S. Frolov ◽

G. E. Yakovlev ◽

V. I. Zubkov

Keyword(s):

Doping Profile ◽

Electrochemical Capacitance ◽

Capacitance Voltage ◽

Heavily Doped

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Metal-Organic chemical vapour deposition (mocvd) growth utilising cu(acac)2 (acac  pentane-3, 5-dionato) as a source for copper-containing materials: Influence of carrier gas on surface morphology

Advanced Materials for Optics and Electronics ◽

10.1002/amo.860010203 ◽

1992 ◽

Vol 1 (2) ◽

pp. 59-64 ◽

Cited By ~ 12

Author(s):

William S. Rees ◽

Celia R. Caballero

Keyword(s):

Surface Morphology ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Carrier Gas ◽

Mocvd Growth ◽

Metal Organic

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Improved surface morphology of sulfur-doped homoepitaxial diamond films by plasma CVD method with SF6 Grading–Doping profile

Applied Surface Science ◽

10.1016/s0169-4332(03)00456-2 ◽

2003 ◽

Vol 216 (1-4) ◽

pp. 596-602 ◽

Cited By ~ 1

Author(s):

Sachiko Fujii ◽

Shigeru Hino ◽

Takeshi Kobayashi

Keyword(s):

Surface Morphology ◽

Diamond Films ◽

Doping Profile ◽

Plasma Cvd ◽

Cvd Method

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Техника электрохимического вольт-фарадного профилирования сильно легированных структур с резким профилем распределения примеси

Физика и техника полупроводников ◽

10.21883/ftp.2019.02.47114.8966 ◽

2019 ◽

Vol 53 (2) ◽

pp. 281 ◽

Cited By ~ 1

Author(s):

Д.С. Фролов ◽

Г.Е. Яковлев ◽

В.И. Зубков

Keyword(s):

Ion Implantation ◽

Doping Profile ◽

Electrochemical Capacitance ◽

Optimal Measurement ◽

Type Silicon ◽

Capacitance Voltage ◽

Silicon Structures ◽

Heavily Doped ◽

P Type ◽

Selection Of

AbstractThe specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal measurement parameters, and the necessity of increasing the frequency, at which the capacitance is measured during profiling, is substantiated. The described procedure is considered by the example of profiling p -type silicon structures with ion implantation as well as n -GaAs epitaxial and substrate structures for p HEMT devices.

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