Preparation of transparent conducting ZnO:Al films on polymer substrates by r. f. magnetron sputtering

2000 ◽  
Vol 158 (1-2) ◽  
pp. 43-48 ◽  
Author(s):  
D.H Zhang ◽  
T.L Yang ◽  
J Ma ◽  
Q.P Wang ◽  
R.W Gao ◽  
...  
2000 ◽  
Vol 373 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tadatsugu Minami ◽  
Takashi Yamamoto ◽  
Yukinobu Toda ◽  
Toshihiro Miyata

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 184-186 ◽  
Author(s):  
Huafu Zhang ◽  
Hanfa Liu ◽  
Chengxin Lei ◽  
Changkun Yuan ◽  
Aiping Zhou

2011 ◽  
Vol 264-265 ◽  
pp. 754-759 ◽  
Author(s):  
Bakri Jufriadi ◽  
Agus Geter E. Sutjipto ◽  
R. Othman ◽  
R. Muhida

AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly.


Author(s):  
Д.А. Кириенко ◽  
О.Я. Березина

AbstractA method for determining the number of defects arising under compressive and tensile stress in bended thin transparent conducting coatings on polymer substrates is proposed. This algorithm is based on the use of mathematical methods of artificial neural networks. The network is trained for calculating the average defect density per unit length at the input parameters corresponding to film and substrate sizes, surface resistance of the conducting coating, and bending radius. The application of this method allows one to determine the average defect density with high accuracy.


Sign in / Sign up

Export Citation Format

Share Document