Indium oxide film formation by O2 cluster ion-assisted deposition

1998 ◽  
Vol 54 (1-3) ◽  
pp. 258-261 ◽  
Author(s):  
Wei Qin ◽  
Ronald Philip Howson ◽  
Makoto Akizuki ◽  
Jiro Matsuo ◽  
Gikan Takaoka ◽  
...  
Keyword(s):  
Oxide Film ◽  
Indium Oxide ◽  
Film Formation ◽  
Cluster Ion ◽  
Indium Oxide Film

Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate

2011 ◽  
Vol 605 (9-10) ◽  
pp. 977-981 ◽  
Author(s):  
Lingyi Kong ◽  
Jin Ma ◽  
Caina Luan ◽  
Zhen Zhu ◽  
Qiaoqun Yu
Keyword(s):  
Optical Property ◽  
Oxide Film ◽  
Domain Structure ◽  
Indium Oxide ◽  
Indium Oxide Film

The effect of post-deposition transverse current injection on amorphous indium oxide film conductivity

1998 ◽  
Vol 333 (1-2) ◽  
pp. 150-156 ◽  
Author(s):  
N Parkansky ◽  
B Alterkop ◽  
R Rosenbaum ◽  
R.L Boxman ◽  
S Goldsmith
Keyword(s):  
Oxide Film ◽  
Indium Oxide ◽  
Current Injection ◽  
Transverse Current ◽  
Indium Oxide Film ◽  
Post Deposition ◽  
Film Conductivity

Influence of a parallel electric field on the conductivity of a growing indium oxide film

1996 ◽  
Vol 290-291 ◽  
pp. 10-12 ◽  
Author(s):  
B. Alterkop ◽  
N. Parkansky ◽  
R.L. Boxman ◽  
S. Goldsmith
Keyword(s):  
Oxide Film ◽  
Electric Field ◽  
Indium Oxide ◽  
Parallel Electric Field ◽  
Indium Oxide Film

Composition Change of Indium Oxide Film by Triethylgallium Irradiation Prepared forIn SituSelective Epitaxy Use

1993 ◽  
Vol 32 (Part 1, No. 10) ◽  
pp. 4732-4736 ◽  
Author(s):  
Kazunari Ozasa ◽  
Tianchun Ye ◽  
Yoshinobu Aoyagi
Keyword(s):  
Oxide Film ◽  
Indium Oxide ◽  
Composition Change ◽  
Indium Oxide Film

High Quality Oxide Film Formation by 02 Cluster Ion Assisted Deposition Technique

1997 ◽  
Vol 504 ◽  
Author(s):  
J. Matsuo ◽  
W. Qin ◽  
M. Akizuki ◽  
T. Yodoshi ◽  
I. Yamada
Keyword(s):  
Kinetic Energy ◽  
Oxide Film ◽  
Film Formation ◽  
Ion Beam ◽  
Ion Beams ◽  
Flat Panel Display ◽  
Low Resistivity ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Oxygen Cluster

ABSTRACTA new oxide film formation technique using gas-cluster ion beams has been developed. 02 cluster ions were used to irradiate during the evaporation of metal atoms, and PbOx and In203 films were grown. At the acceleration voltages above 5 kV, polycrystalline PbOx films preferentially oriented to (111) were obtained. A significant smoothing effect was observed with an acceleration voltage as low as 1 kV. An average surface roughness of 0.9 nm was obtained at 7 kV. Oxygen cluster ion beams are also utilized to grow In203 films, which are widely used as conductive-transparent films in flat panel display. In203 was deposited on glass or silicon substrates with simultaneous irradiation with an oxygen cluster ion beam. Highly transparent (80%) and low resistivity (<4×10−4 Ωcm) films were obtained with 7keV oxygen cluster ion beams. Kinetic energy of above 3keV is necessary to obtain low resistivity films. These results clearly indicate that the kinetic energy of the cluster is effectively used to enhance oxidation on the surface without radiation damage, in spite of the high acceleration voltages.

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