Investigation of nitride phases in stainless steels by nuclear reaction analysis and X-ray diffraction

In the present work hydrothermally grown ZnO single crystals were electrochemically charged with hydrogen. The influence of hydrogen on ZnO microstructure was investigated by positron annihilation spectroscopy (PAS) combined with X-ray diffraction (XRD) using synchrotron radiation. Hydrogen concentration in the samples was determined by nuclear reaction analysis (NRA). It was found that a high concentration of hydrogen can be introduced into ZnO by electrochemical loading. At low concentrations, absorbed hydrogen causes elastic volume expansion of ZnO crystal. At higher concentration, hydrogen-induced stresses exceed the yield stress in ZnO and plastic deformation of the crystal takes place leading to formation of a defected subsurface layer in the crystals.

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In-Situ Observation for Weld Solidification in Stainless Steels Using Time-Resolved X-ray Diffraction

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.47.310 ◽

2006 ◽

Vol 47 (2) ◽

pp. 310-316 ◽

Cited By ~ 37

Author(s):

Mitsuharu Yonemura ◽

Takahiro Osuki ◽

Hidenori Terasaki ◽

Yuichi Komizo ◽

Masugu Sato ◽

...

Keyword(s):

Stainless Steels ◽

X Ray Diffraction ◽

Time Resolved ◽

X Ray

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Direct Observations of Sigma Phase Formation in Duplex Stainless Steels Using In-Situ Synchrotron X-Ray Diffraction

Metallurgical and Materials Transactions A ◽

10.1007/s11661-006-9076-3 ◽

2007 ◽

Vol 38 (3) ◽

pp. 464-475 ◽

Cited By ~ 77

Author(s):

J. W. Elmer ◽

T. A. Palmer ◽

E. D. Specht

Keyword(s):

Phase Formation ◽

Stainless Steels ◽

Sigma Phase ◽

Duplex Stainless Steels ◽

X Ray Diffraction ◽

X Ray ◽

Direct Observations

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Compositional and structural studies of amorphous GaN grown by ion-assisted deposition

MRS Proceedings ◽

10.1557/proc-693-i6.10.1 ◽

2001 ◽

Vol 693 ◽

Cited By ~ 2

Author(s):

U. D. Lanke ◽

A. Koo ◽

B. J. Ruck ◽

H. K. Lee ◽

A. Markwitz ◽

...

Keyword(s):

Atomic Ratio ◽

Nuclear Reaction Analysis ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Local Bonding ◽

Ion Energies ◽

Nitrogen Ion ◽

Tetrahedral Bonding ◽

X Ray Absorption

AbstractAmorphous GaN films have been deposited onto various substrates by ion-assisted deposition. The films were deposited at room temperature using nitrogen ion energies in the range 40-900 eV. Rutherford backscattering spectroscopy and nuclear reaction analysis show that the Ga:N atomic ratio is approximately one for films grown with ion energy near 500 eV; these films have the highest transparency. Films grown with ion energies below 300 eV are Ga rich, and show reduced transparency across the visible. Raman spectroscopy, x-ray diffraction, and transmission electron microscopy confirm the amorphous nature of the films. Annealing studies on a-GaN establish that the films begin to crystallise at a temperature of about 700 C. To investigate the local bonding environment of the Ga or N atoms, we have measured the extended x-ray absorption fine structure (EXAFS) of the transparent GaN films. The EXAFS results indicate that the films are dominated by heteropolar tetrahedral bonding, with a low density of homopolar bonds.

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Effect of Silicon on High Temperature Oxidation Of Stainless Steels★

CORROSION ◽

10.5006/0010-9312-15.11.73 ◽

1959 ◽

Vol 15 (11) ◽

pp. 73-77 ◽

Cited By ~ 18

Author(s):

JOHN F. RADAVICH

Keyword(s):

Metal Oxide ◽

Oxide Scale ◽

Oxidation Resistance ◽

Stainless Steels ◽

Oxide Films ◽

Fluorescence Analysis ◽

X Ray Diffraction ◽

Oxide Interface ◽

Temperature Oxidation ◽

X Ray

Abstract Growth of oxide films at 600 and 800 C on a series of 16 Cr-10 Ni-bal Fe stainless steels with silicon contents ranging from 0.17 to 3.55 percent was studied by electron microscopy, electron diffraction, X-ray diffraction and X-ray fluorescence analysis techniques. Oxide scales and sub-scales formed during oxidation at 1000 C were studied optically in cross section as well as by X-ray diffraction and fluorescence analysis. Results show that as silicon content increases oxidation resistance increases rapidly until at the high silicon level, 3.55 percent, a very thin oxide film is formed at 60u and 800 G and very little oxide scale forms at 1000 C. Mechanism of oxidation resistance imparted by silicon appears to be that it decreases the number of defects in the initial oxide films formed at the metal-oxide interface. With a lesser number of defects in the thin film, an enrichment of Cr at the metal-oxide interface and in the oxide films occurs and the rate of diffusion of iron outward to form the oxide scale is greatly retarded. 2.3.7

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Materials Analysis with High Energy Ion Beams Part II: Channeling and Other Techniques

MRS Bulletin ◽

10.1557/s0883769400067191 ◽

1987 ◽

Vol 12 (6) ◽

pp. 30-34 ◽

Cited By ~ 4

Author(s):

H-J. Gossmann ◽

L.C. Feldman

Keyword(s):

Nuclear Reaction ◽

Ion Beam ◽

Light Element ◽

High Energy ◽

Ion Beams ◽

Nuclear Reaction Analysis ◽

Materials Analysis ◽

X Ray ◽

Beam Scattering ◽

Crystalline Defect

AbstractThis article discusses uses of high energy ion beam scattering for materials analysis, including channeling, particle induced x-ray emission (PIXE), and nuclear reaction analysis (NRA). These additional capabilities used in conjunction with RBS equipment provide capabilities for crystalline defect studies and light element detection.

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X-Ray Study on Deformation and Fracture of Solid. Measurement of Hydrogen in BCN Films by Nuclear Reaction Analysis.

Journal of the Society of Materials Science Japan ◽

10.2472/jsms.50.727 ◽

2001 ◽

Vol 50 (7) ◽

pp. 727-731 ◽

Cited By ~ 1

Author(s):

Haruyuki YASUI ◽

Yukio HIROSE ◽

Toshihiko SASAKI ◽

Kaoru AWAZU ◽

Hiroshi NARAMOTO

Keyword(s):

Nuclear Reaction ◽

Nuclear Reaction Analysis ◽

X Ray ◽

Deformation And Fracture

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Magnetic and transport properties of stainless steels at low temperature

Acta Metallurgica Slovaca ◽

10.12776/ams.v23i3.981 ◽

2017 ◽

Vol 23 (3) ◽

pp. 257 ◽

Cited By ~ 1

Author(s):

Katsuhiko Nishimura ◽

Takahiro Namiki ◽

Tsuyoshi Ikeno ◽

Yuichi Yamamoto ◽

Wayne D. Hutchison

Keyword(s):

Experimental Data ◽

Thermal Conductivity ◽

Transport Properties ◽

Thermoelectric Power ◽

Stainless Steels ◽

Low Temperatures ◽

Martensite Phase ◽

X Ray Diffraction ◽

X Ray ◽

Cold Rolled

Magnetic and transport properties of cold rolled SUS304 stainless steels were investigated via measurements of X-ray diffraction, magnetization, thermoelectric power (TEP), thermal conductivity and electrical resistivity from 300 K down to low temperatures. Saturation magnetizations at 300 K were 1.6, 37.5, 72.6 and 105.6 emu/g for rolled thickness reduction ratios of 0, 33, 50 and 75%, respectively. The thermoelectric power (TEP) values at 300 K were found to be -1.3, -0.4, 1.6 and 2.9 mV/K for the reduction ratios of 0, 33, 50 and 75%, respectively. Least-squares fits of the experimental data predicted a saturation magnetization of 141 emu/g and a thermoelectric power of 4.3 mV/K for SUS304 in the martensite phase at 300 K.

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