Visualization of domain boundaries in Gd2(MoO4)3 single crystals by scanning electron microscope potential contrast

1981 ◽  
Vol 6 (1) ◽  
pp. 67-69 ◽  
Author(s):  
K.-P. Meyer ◽  
H. Blumtritt ◽  
L. Szcześniak
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystals ◽  
Domain Boundaries ◽  
Scanning Electron

Mounting an individual submicrometer sized single crystal

1996 ◽  
Vol 211 (6) ◽  
Author(s):  
R. B. Neder ◽  
M. Burghammer ◽  
Th. Grasl ◽  
H. Schulz
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystal ◽  
Single Crystals ◽  
High Vacuum ◽  
Nanometer Resolution ◽  
Micro Manipulator ◽  
Scanning Electron

AbstractWe developed a new micro manipulator for mounting individual sub-micrometer sized single crystals within a scanning electron microscope. The translations are realized via a commercially available piezomicroscope, adapted for high vacuum usage and realize nanometer resolution. With this novel instrument it is routinely possible to mount individual single crystals with sizes down to 0.1

Electron Microprobe and Scanning Electron Microscope Investigations on Plate-Shaped CdS Single Crystals

1968 ◽  
Vol 29 (2) ◽  
pp. K89-K90
Author(s):  
P. Flögel ◽  
E. Nebauer ◽  
H.-J. Ullrich ◽  
S. Däbritz ◽  
F. Zimmer
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystals ◽  
Electron Microprobe ◽  
Scanning Electron

Study of ferroelectric domains on G.A.S.H. single crystals by the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 158-159
Author(s):  
R. Le Bihan ◽  
G. Jouet
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystals ◽  
Domain Structure ◽  
Ferroelectric Properties ◽  
Secondary Electron Emission ◽  
Incident Beam ◽  
Polar Axis ◽  
Decoration Technique ◽  
Scanning Electron

The ferroelectric properties of guanidine aluminium sulphate hexahydrate (G.A.S.H.) were discovered in 1955 (1). The polar axis was found to be perpendicular to the natural cleavage plane. The domain structure of G.A.S.H. have been observed by Pearson and Feldman (2) by pulver technique, Yuri at al. (3) by electroluminescence and B. Hilczer at al. (4-5) by electron microscope decoration techniqueWe study domain structure in G.A.S.H. single crystals whithout metallization with a scanning electron microscope (S.E.M.). Figure 1 shows the observations obtained on a no etched crystal observed with a scanning electron microscope in the secondary electron emission mode; we see a domain. When the accelerating voltage Vacc of the incident beam pass from 2.3 KV. to 5 KV. the contrast between domains is inversed. At 3.5 KV. the contrast is the same that at 5 KV. but the domain wall is more precise. The inversion of contrast is obtained between 3.3 KV. and 3.4 KV. ; and in this inversion zone we have not any contrast due to the domain or to its boundary.

Study of ferroelectric domain structure of gash single crystals by scanning electron microscope

1984 ◽  
Vol 55 (1) ◽  
pp. 189-192 ◽  
Author(s):  
Raymond Le Bihan ◽  
El Harbi Boudjema ◽  
Bozena Hilczer ◽  
Ludwik Szczesniak ◽  
Claus-Peter Mayer.
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystals ◽  
Domain Structure ◽  
Ferroelectric Domain ◽  
Ferroelectric Domain Structure ◽  
Scanning Electron

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System

2008 ◽  
Vol 600-603 ◽  
pp. 55-58
Author(s):  
Mamoru Imade ◽  
Takashi Ogura ◽  
Masahiro Uemura ◽  
Fumio Kawamura ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Melting Point ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Single Crystals ◽  
Transmission Electron Microscope ◽  
Lattice Image ◽  
Transmission Electron ◽  
Periodical Structure ◽  
Scanning Electron

We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 oC, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC. Many hexagonal-shaped crystals of approximately 100 m in diameter were observed via a scanning electron microscope (SEM). A high resolution transmission electron microscope (HR-TEM) lattice image of the grown crystals showed a periodical structure with A-B stacking along the <0001> direction. These results indicated that the Li-based flux was useful for growing bulk 2H-SiC single crystals.

Micro-Machining of Copper and Aluminum Crystals

1970 ◽  
Vol 92 (1) ◽  
pp. 130-134 ◽  
Author(s):  
B. F. Von Turkovich ◽  
J. T. Black
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystals ◽  
Chip Formation ◽  
Deformation Zone ◽  
Micro Machining ◽  
Slip Planes ◽  
Shear Front ◽  
Shear Planes ◽  
Scanning Electron

The process of chip formation in copper and aluminum single crystals has been examined with a scanning electron microscope. The morphology of the shear planes clearly illustrates that the actual deformation zone (layer or shear front) is an extremely thin and well-defined band of slip planes wherein the predominant deformation takes place. The appearance of the top or upper surface of the chip corresponds to the micro mechanisms operating during the process of machining.

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