High Resolution Specimen Area Imaged Under Negligible Field Aberrations

Author(s):  
T. Yanaka ◽  
K. Shirota

It is significant to note field aberrations (chromatic field aberration, coma, astigmatism and blurring due to curvature of field, defined by Glaser's aberration theory relative to the Blenden Freien System) of the objective lens in connection with the following three points of view; field aberrations increase as the resolution of the axial point improves by increasing the lens excitation (k2) and decreasing the half width value (d) of the axial lens field distribution; when one or all of the imaging lenses have axial imperfections such as beam deflection in image space by the asymmetrical magnetic leakage flux, the apparent axial point has field aberrations which prevent the theoretical resolution limit from being obtained.

Author(s):  
K. Ishizuka ◽  
K. Shirota

In a conventional alignment for high-resolution electron microscopy, the specimen point imaged at the viewing-screen center is made dispersion-free against a voltage fluctuation by adjusting the incident beam direction using the beam deflector. For high-resolution works the voltage-center alignment is important, since this alignment reduces the chromatic aberration. On the other hand, the coma-free alignment is also indispensable for high-resolution electron microscopy. This is because even a small misalignment of the incident beam direction induces wave aberrations and affects the appearance of high resolution electron micrographs. Some alignment procedures which cancel out the coma by changing the incident beam direction have been proposed. Most recently, the effect of a three-fold astigmatism on the coma-free alignment has been revealed, and new algorithms of coma-free alignment have been proposed.However, the voltage-center and the coma-free alignments as well as the current-center alignment in general do not coincide to each other because of beam deflection due to a leakage field within the objective lens, even if the main magnetic-field of the objective lens is rotationally symmetric. Since all the proposed procedures for the coma-free alignment also use the same beam deflector above the objective lens that is used for the voltage-center alignment, the coma-free alignment is only attained at the sacrifice of the voltage-center alignment.


Author(s):  
William Krakow

Focussing and stigmation of the objective lens for high resolution STEM imaging is usually achieved by repeated reduced area scans of a given specimen area under manual control of the instrument. This method is particularly laborious since the scan times for images can be upwards of several seconds which subjects a specimen to unwanted electron beam exposure. Methods have been proposed to optimize STEM images such as the use of shadow images1 where a fixed beam pattern for a highly defocussed objective lens is observed. This method again requires a high beam dose in a given specimen area. Alternately, if a white noise object such as a carbon film is used, granular image features without any directionality are desired. In this case the eye must integrate over a large number of small image features. A better alternative is the use computer control to digitize images in real time and compute the power spectrum of an image could be employed. This would require a dedicated high speed computer system for a 1000 × 1000 display, but this latter method would have the advantage that only a single scan of image is required.


Author(s):  
T. Honda ◽  
H. Watanabe ◽  
K. Ohi ◽  
E. Watanabe ◽  
Y. Kokubo

An analytical electron microscope equipped with a side-entry goniometer (SEG) has recently become more widespread than a conventional electron microscope by the following reasons: (1) a variety of specimen holders, (2) large tilting angle with eucentricity. However, the resolution of SEG-system is about 0.4 nm, whereas the resolution of 0.25 nm or less can be obtained by an electron microscope equipped with a top-entry goniometer (TEG)1). Factors determining the resolution of an electron microscope are (1) the aberration coefficients of the objective lens, (2) stability of exciting currents, (3) illumination angle of the electron beam on the specimen, (4) energy spread of the electron beam, and ( 5) vibration and specimen drift. It has been usually difficult to observe high resolution images during use of the SEG system, because of the aberration coefficients of the objective lens, vibration and specimen drift. In order to obtain a resolution of less than 0.3 nm with SEG system at 200 kV, both of spherical and chromatic aberration coefficients should be reduced less than 2 mm. Moreover, relative amplitude of vibration between the specimen and pole pieces should be less than a half value of resolution limit. The image drift should be less than 0.02 nm/sec, because the exposure time usually required for photographing a high resolution image is about 5 second.


Author(s):  
Louis T. Germinario

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).


Author(s):  
H. Tochigi ◽  
H. Uchida ◽  
S. Shirai ◽  
K. Akashi ◽  
D. J. Evins ◽  
...  

A New High Excitation Objective Lens (Second-Zone Objective Lens) was discussed at Twenty-Sixth Annual EMSA Meeting. A new commercially available Transmission Electron Microscope incorporating this new lens has been completed.Major advantages of the new instrument allow an extremely small beam to be produced on the specimen plane which minimizes specimen beam damages, reduces contamination and drift.


Author(s):  
Michael Beer ◽  
J. W. Wiggins ◽  
David Woodruff ◽  
Jon Zubin

A high resolution scanning transmission electron microscope of the type developed by A. V. Crewe is under construction in this laboratory. The basic design is completed and construction is under way with completion expected by the end of this year.The optical column of the microscope will consist of a field emission electron source, an accelerating lens, condenser lens, objective lens, diffraction lens, an energy dispersive spectrometer, and three electron detectors. For any accelerating voltage the condenser lens function to provide a parallel beam at the entrance of the objective lens. The diffraction lens is weak and its current will be controlled by the objective lens current to give an electron diffraction pattern size which is independent of small changes in the objective lens current made to achieve focus at the specimen. The objective lens demagnifies the image of the field emission source so that its Gaussian size is small compared to the aberration limit.


Author(s):  
Earl J. Kirkland ◽  
Robert J. Keyse

An ultra-high resolution pole piece with a coefficient of spherical aberration Cs=0.7mm. was previously designed for a Vacuum Generators HB-501A Scanning Transmission Electron Microscope (STEM). This lens was used to produce bright field (BF) and annular dark field (ADF) images of (111) silicon with a lattice spacing of 1.92 Å. In this microscope the specimen must be loaded into the lens through the top bore (or exit bore, electrons traveling from the bottom to the top). Thus the top bore must be rather large to accommodate the specimen holder. Unfortunately, a large bore is not ideal for producing low aberrations. The old lens was thus highly asymmetrical, with an upper bore of 8.0mm. Even with this large upper bore it has not been possible to produce a tilting stage, which hampers high resolution microscopy.


Author(s):  
H.S. von Harrach ◽  
D.E. Jesson ◽  
S.J. Pennycook

Phase contrast TEM has been the leading technique for high resolution imaging of materials for many years, whilst STEM has been the principal method for high-resolution microanalysis. However, it was demonstrated many years ago that low angle dark-field STEM imaging is a priori capable of almost 50% higher point resolution than coherent bright-field imaging (i.e. phase contrast TEM or STEM). This advantage was not exploited until Pennycook developed the high-angle annular dark-field (ADF) technique which can provide an incoherent image showing both high image resolution and atomic number contrast.This paper describes the design and first results of a 300kV field-emission STEM (VG Microscopes HB603U) which has improved ADF STEM image resolution towards the 1 angstrom target. The instrument uses a cold field-emission gun, generating a 300 kV beam of up to 1 μA from an 11-stage accelerator. The beam is focussed on to the specimen by two condensers and a condenser-objective lens with a spherical aberration coefficient of 1.0 mm.


Author(s):  
T. Miyokawa ◽  
H. Kazumori ◽  
S. Nakagawa ◽  
C. Nielsen

We have developed a strongly excited objective lens with a built-in secondary electron detector to provide ultra-high resolution images with high quality at low to medium accelerating voltages. The JSM-6320F is a scanning electron microscope (FE-SEM) equipped with this lens and an incident beam divergence angle control lens (ACL).The objective lens is so strongly excited as to have peak axial Magnetic flux density near the specimen surface (Fig. 1). Since the speciien is located below the objective lens, a large speciien can be accomodated. The working distance (WD) with respect to the accelerating voltage is limited due to the magnetic saturation of the lens (Fig.2). The aberrations of this lens are much smaller than those of a conventional one. The spherical aberration coefficient (Cs) is approximately 1/20 and the chromatic aberration coefficient (Cc) is 1/10. for accelerating voltages below 5kV. At the medium range of accelerating voltages (5∼15kV). Cs is 1/10 and Cc is 1/7. Typical values are Cs-1.lmm. Cc=l. 5mm at WD=2mm. and Cs=3.lmm. Cc=2.9 mm at WD=5mm. This makes the lens ideal for taking ultra-high resolution images at low to medium accelerating voltages.


Author(s):  
Kiyomichi Nakai ◽  
Yusuke Isobe ◽  
Chiken Kinoshita ◽  
Kazutoshi Shinohara

Induced spinodal decomposition under electron irradiation in a Ni-Au alloy has been investigated with respect to its basic mechanism and confirmed to be caused by the relaxation of coherent strain associated with modulated structure. Modulation of white-dots on structure images of modulated structure due to high-resolution electron microscopy is reduced with irradiation. In this paper the atom arrangement of the modulated structure is confirmed with computer simulation on the structure images, and the relaxation of the coherent strain is concluded to be due to the reduction of phase-modulation.Structure images of three-dimensional modulated structure along <100> were taken with the JEM-4000EX high-resolution electron microscope at the HVEM Laboratory, Kyushu University. The transmitted beam and four 200 reflections with their satellites from the modulated structure in an fee Ni-30.0at%Au alloy under illumination of 400keV electrons were used for the structure images under a condition of the spherical aberration constant of the objective lens, Cs = 1mm, the divergence of the beam, α = 3 × 10-4 rad, underfocus, Δf ≃ -50nm and specimen thickness, t ≃ 15nm. The CIHRTEM code was used for the simulation of the structure image.


Sign in / Sign up

Export Citation Format

Share Document