Grain boundary structure observed by T.E.M

Author(s):  
P.J. Goodhew

This paper reports some observations on gold by TEM which imply that the dissociation of a high angle grain boundary into two lower energy boundaries may occur extensively.It is well established that grain boundaries of any desired geometry can be created in gold by the welding together of thin single crystals. The resultant thin bicrystal specimens are ideally suited for immediate examination by TEM and many aspects of grain boundary structure and behaviour in such specimens have been studied or discussed. One particularly useful specimen configuration can be achieved if the bicrystal is annealed until its boundary migrates (lowering its total area) until it is perpendicular to the surface of the thin specimen. This specimen geometry has been used to study, inter alia, the faceting of grain boundaries.During a study of the behaviour of coincidence high angle boundaries (i.e. those special boundaries whose geometry is such that a fraction 1/Σ of the lattice sites in both crystals coincide) it was noticed that the boundary under observation was no longer a single planar defect.

1990 ◽  
Vol 5 (5) ◽  
pp. 919-928 ◽  
Author(s):  
S. E. Babcock ◽  
D. C. Larbalestier

Regular networks of localized grain boundary dislocations (GBDs) have been imaged by means of transmission electron microscopy in three different types of high-angle grain boundaries in YBa2Cu3O7-δ, implying that these boundaries possess ordered structures upon which a significant periodic strain field is superimposed. The occurrence of these GBD networks is shown to be consistent with the GBD/Structural Unit and Coincidence Site Lattice (CSL)/Near CSL descriptions for grain boundary structure. Thus, these dislocations appear to be intrinsic features of the boundary structure. The spacing of the observed GBDs ranged from ∼10 nm to ∼100 nm. These GBDs make the grain boundaries heterogeneous on a scale that approaches the coherence length and may contribute to their weak-link character by producing the “superconducting micro-bridge” microstructure which has been suggested on the basis of detailed electromagnetic measurements on similar samples.


Author(s):  
L.M. Clarebrough ◽  
C.T. Forwood

An outstanding experimental contribution to the knowledge of grain boundary structure in the 1970's is the work of Balluffi and his colleagues at Cornell University on artificially fabricated boundary interfaces in thin films of gold (e.g., Balluffi, Komem and Schober, 1972; Balluffi, Goodhew, Tan and Wagner, 1975). In particular, for high-angle boundaries they have shown that secondary grain boundary dislocations (g.b.d's.) do exist and accommodate a deviation from a low-energy misorientation corresponding to an exact C.S.L. relationship. Further, following the results of Spyridelis, Delavignette and Amelinckx (1967) they have shown that a network of g.b.d's. can act as a diffraction grating, causing extra reflections whose spacing is reciprocally related to the separation of the g.b.d's. (Balluffi, Sass and Schober, 1972). The description of high-angle grain boundaries in terms of secondary g.b.d's. accommodating a departure from an exact C.S.L. orientation is based solely on geometrical considerations, but it has been pointed out that other low-energy configurations may be preferred when account is taken of the nature of interatomic forces (Gleiter and Pumphrey, 1976; Hermann, Gleiter and Baro, 1976; Smith, Vitek and Pond, 1977).


Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.


1997 ◽  
Vol 492 ◽  
Author(s):  
H. Van Swygenhoven ◽  
M. Spaczér ◽  
A. Caro

ABSTRACTMolecular dynamics computer simulations of high load plastic deformation at temperatures up to 500K of Ni nanophase samples with mean grain size of 5 nm are reported. Two types of samples are considered: a polycrystal nucleated from different seeds, each having random location and random orientation, representing a sample with mainly high angle grain boundaries, and polycrystals with seeds located at the same places as before, but with a limited missorientation representing samples with mainly low angle grain boundaries. The structure of the grain boundaries is studied by means of pair distribution functions, coordination number, atom energetics, and common neighbour analysis. Plastic behaviour is interpreted in terms of grain-boundary viscosity, controlled by a self diffusion mechanism at the disordered interface activated by thermal energy and stress.


1991 ◽  
Vol 238 ◽  
Author(s):  
Douglas E. Meyers ◽  
Alan J. Ardell

ABSTRACTThe results of our initial efforts at measuring the fracture strengths of grain boundaries In Ni3Al using a miniaturized disk-bend test are presented. The samples tested were 3 mm in diameter and between 150 and 300 μm thick. An Ingot of directlonally-solidlfled, boron-free Ni3Al containing 24% Al was annealed between 1300 and 1350 °C to induce grain growth, producing many grain boundaries In excess of 1.5 mm in length. Specimens were cut from these In such a way that one long grain boundary was located near a diameter of the specimen. The relative orientations of the grains on either side of the boundary were determined from electron channeling patterns. Low-angle boundaries are so strong they do not fracture; Instead the samples deform In a completely ductile manner. High-angle boundaries always fracture, but only after considerable plastic deformation of the two grains flanking them. Fracture is Indicated by a load drop in the load vs. displacement curves. A method involving extrapolation of the elastic portion of these curves to the displacement at fracture is used to estimate the fracture stresses. This procedure yields consistent values of the fracture strengths of high-angle boundaries. The measured stresses are large (∼2 to 3 GPa), but considerably smaller than those required for the fracture of special boundaries, as predicted by computer simulations. No correlation was found between the fracture stresses or loads and the geometry of the high-angle boundaries, many of which are close to, but deviate from, coincident site lattice orientations.


2004 ◽  
Vol 10 (S02) ◽  
pp. 304-305 ◽  
Author(s):  
James P Buban ◽  
Katsuyuki Matsunaga ◽  
Takahisa Yamamoto ◽  
Yuichi Ikuhara

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


1991 ◽  
Vol 05 (19) ◽  
pp. 2989-3028 ◽  
Author(s):  
E.I. RABKIN ◽  
L.S. SHVINDLERMAN ◽  
B.B. STRAUMAL

Recent theories of grain boundary structure have been reviewed briefly. The possibility of existence of the same variety of phase transitions on grain boundaries as that on the crystal external surface has been demonstrated. Recent experimental data and theoretical models concerning grain boundary phase transitions are critically analysed. Grain boundary phase transitions connected with the formation of thin disordered layers on the boundary (prewetting, premelting) are particularly distinguished. Results of recent indirect experiments, which may be treated in terms of prewetting and premelting, have been reviewed. Experimentally observed critical phenomena in the vicinity of the prewetting transition on the tin-germanium interphase boundary have been discussed in terms of the critical exponents theory. Some ideas regarding directions of further research are presented.


2007 ◽  
Vol 121-123 ◽  
pp. 1241-1244 ◽  
Author(s):  
Dong Seok Seo ◽  
Hwan Kim ◽  
Jong Kook Lee

In this study, it was demonstrated how second phases with small amount, which are hardly detected by XRD analysis, affect grain boundary dissolution and related mechanical properties of HA. All HA disks sintered at 1200 oC for 2 h in air with under moisture protection were phase pure and had Ca/P molar ratio of 1.67. Following certain period of exposure to the distilled water, the surface dissolution initiated at grain boundaries and particle loosening, subsequently resulting in decrease in mechanical properties of HA. In order to understand the dissolution mechanism, grain boundary structure of HA was identified by transmission electron microscopy (TEM) and high resolution TEM observation. From the analysis, it was found that the non-stoichiometric phase as α-tricalcium phosphate (TCP) transformed from β-TCP was existed at grain boundaries and caused surface dissolution of HA. From the XRD analysis, it was found that (211) and (112) planes of hydroxyapatite were susceptible to dissolution, whereas (300) plane was relatively stable.


1995 ◽  
Vol 391 ◽  
Author(s):  
M. Hasunuma ◽  
H. Toyoda ◽  
T. Kawanoue ◽  
S. Ito ◽  
H. Kaneko ◽  
...  

AbstractIn order to clarify the relationship between Al line reliability and film microstructure, especially grain boundary structure and crystal texture, we have tested three kinds of highly textured Al lines, namely, single-crystal Al line, quasi-single-crystal Al line and hypertextured Al line, and two kinds of conventional Al lines deposited on TiN/Ti and on SiO2. Consequently, the empirical relation between the electromigration (EM) lifetime of Al line † and the (111) full width at half maximum (FWHM) value ω is described by † ∝ ω-2 [1]. This improvement of Al line reliability results from as following reasons; firstly, homogeneous microstructure and high activation energy of 1.28eV for the single-crystal Al line (ω=0.18°); secondly, sub-grain boundaries which consisted of dislocation arrays found in the quasi-single-crystal Al line (ω=0.26°) has turned out to be no more effective mass transport paths because dislocation lines are perpendicular to the direction of electron wind. Although there exist plural grain boundary diffusion paths in the newly developed hypertextured Al line (ω=0.5°) formed by using an amorphous Ta-Al underlayer {1], the vacancy flux along the line has been suppressed to the same order of magnitude of single crystal line. It has been clarified that the decrease of FWHM value has promoted the formation of sub-grain boundaries and low-angle boundaries with detailed orientation analysis of individual grains in the hypertextured film. The longer EM lifetime for the hypertextured Al line is considered to be due to the small grain boundary diffusivities for these stable grain boundaries, and this diffusivity reduction resulted in the suppression of void/hillock pair in the Al lines. These results have confirmed that controlling texture and/or grain boundary itself is a promising approach to develop reliable Al lines which withstand higher current densities required in future ULSIs.


1999 ◽  
Vol 5 (S2) ◽  
pp. 792-793
Author(s):  
J.A. Zaborac ◽  
J.P. Buban ◽  
H.O. Moltaji ◽  
S. Stemmer ◽  
N.D. Browning

Grain boundaries have long been known to have a dominant effect on the electronic properties of polycrystalline materials. In the case of electroceramic oxides, the thermodynamics of defect formation (vacancies or interstitials, cations or anions) are usually invoked to predict the presence of a space charge potential at the grain boundaries. The relative energetics for the formation of each type of defect determines the size and sign of this potential barrier and thus, the effect that boundaries have on the overall electronic properties of the materials. However, a limitation to this continuum thermodynamics approach is that it does not consider the effect of the grain boundary structure.To investigate whether the grain boundary atomic structure can have an effect on the energetics of defect formation and hence the electronic properties, here we examine the structure of Σ5 boundaries in two systems, SrTiO3 (perovskite) and TiO2(rutile).


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