Observations of Precipitates In 95PB-5SN Solder

1985 ◽  
Vol 43 ◽  
pp. 342-343 ◽  
Author(s):  
Darrel Frear ◽  
J. W. Morris
Keyword(s):  
Data Processing ◽  
Equilibrium State ◽  
Integrated Circuit ◽  
Electronic Packaging ◽  
High Speed ◽  
Room Temperature ◽  
Limiting Factor ◽  
Fundamental Study ◽  
High Speed Data

The electronic packaging of integrated circuit chips has been cited as the limiting factor in the performance and reliability of high speed data processing units. A very important part of the package is in the first level where solder bonds the IC chip to a ceramic carrier. The most commonly used first level solder is 95Pb-5Sn. The importance of this solder connection instigated the following fundamental study of the microstructure of 95Pb-5Sn and its precipitates.The alloy was melted in vacuum at 400°C using 99.9% pure Pb and Sn. The ingot was allowed to cool and age for a few days at room temperature. TEM 3mm foils were cut and mechanically thinned down to 4 mil thickness. After aging at room temperature the solder is considered to be in its equilibrium state, no further changes in microstructure are observed.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

scholarly journals High-Speed Data Processing Module for LLRF

2015 ◽  
Vol 62 (3) ◽  
pp. 1083-1090 ◽  
Author(s):  
D. Makowski ◽  
A. Mielczarek ◽  
P. Perek ◽  
A. Napieralski ◽  
L. Butkowski ◽  
...  
Keyword(s):  
Data Processing ◽  
High Speed ◽  
Processing Module ◽  
High Speed Data

scholarly journals High Speed Data Processing for Imaging MS-Based Molecular Histology Using Graphical Processing Units

2012 ◽  
Vol 23 (4) ◽  
pp. 745-752 ◽  
Author(s):  
Emrys A. Jones ◽  
René J. M. van Zeijl ◽  
Per E. Andrén ◽  
André M. Deelder ◽  
Lex Wolters ◽  
...  
Keyword(s):  
Data Processing ◽  
High Speed ◽  
Graphical Processing Units ◽  
High Speed Data ◽  
Graphical Processing ◽  
Imaging Ms

Dilute Nitride SOAs for High-Speed Data Processing in Variable Temperature Conditions

2015 ◽  
Author(s):  
G. Giannoulis ◽  
V.-M. Korpijärvi ◽  
N. Iliadis ◽  
J. Mäkelä ◽  
J. Viheriälä ◽  
...  
Keyword(s):  
Data Processing ◽  
High Speed ◽  
Variable Temperature ◽  
Dilute Nitride ◽  
Temperature Conditions ◽  
High Speed Data

scholarly journals Fundamental Study of High Speed Data Transmission by Using Distribution Line Carrier

1996 ◽  
Vol 116 (5) ◽  
pp. 540-547
Author(s):  
Kazuma Takeshita ◽  
Tadashi Suzuki ◽  
Osamu Ishida ◽  
Manabu Sekizawa ◽  
Akio Ogino
Keyword(s):  
Data Transmission ◽  
High Speed ◽  
Fundamental Study ◽  
High Speed Data ◽  
Distribution Line ◽  
Speed Data Transmission

scholarly journals High-Speed Data Processing.

1959 ◽  
Vol 54 (285) ◽  
pp. 319
Author(s):  
Harry Eisenpress ◽  
C. C. Gotlieb ◽  
J. N. P. Hume
Keyword(s):  
Data Processing ◽  
High Speed ◽  
High Speed Data
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