Three-Dimensional Immunoelectron Microscopy of Yeast Cells by a New High-Resolution Replica Method

Author(s):  
Hirano T. ◽  
M. Yamaguchi ◽  
M. Hayashi ◽  
Y. Sekiguchi ◽  
A. Tanaka

A plasma polymerization film replica method is a new high resolution replica technique devised by Tanaka et al. in 1978. It has been developed for investigation of the three dimensional ultrastructure in biological or nonbiological specimens with the transmission electron microscope. This method is based on direct observation of the single-stage replica film, which was obtained by directly coating on the specimen surface. A plasma polymerization film was deposited by gaseous hydrocarbon monomer in a glow discharge.The present study further developed the freeze fracture method by means of a plasma polymerization film produces a three dimensional replica of chemically untreated cells and provides a clear evidence of fine structure of the yeast plasma membrane, especially the dynamic aspect of the structure of invagination (Figure 1).

Author(s):  
Tadashi Hirano ◽  
Akira Tanaka

The Freeze-fracture morphology of the plasma membrane and surface of yeast protoplasts has been investigated by a new high resolution freeze-replica method (Tanaka et al.1978). According to freeze-fracture theory, it is generally argued that the plane of cleavage breaks down into the bilayer and then follows the plane of the membrane between the two halves of the lipid. However, when we observed thin sections of replica film of the surface of the freeze-fractured face of intact yeast cells, the single unit membrane was clearly visible between the replica film and the cytoplasm (Fig. 1). Accordingly, in the case of yeast cells, we assume that the plane of cleavage breaks down between the plasma membrane and cell wall.On the other hand, Walzthöng et al. (1982) have shown that surface granules are an artifact or form of contamination produced under the conditions used for the ordinary freeze-replica method employing metal shadowing film.


2005 ◽  
Vol 38 (2) ◽  
pp. 260-265 ◽  
Author(s):  
Leonore Wiehl ◽  
Jens Oster ◽  
Michael Huth

Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundummsurface was determined.


2009 ◽  
Vol 1184 ◽  
Author(s):  
Luciano Andrey Montoro ◽  
Marina Leite ◽  
Daniel Biggemann ◽  
Fellipe Grillo Peternella ◽  
Kees Joost Batenburg ◽  
...  

AbstractThe knowledge of composition and strain with high spatial resolution is highly important for the understanding of the chemical and electronic properties of alloyed nanostructures. Several applications require a precise knowledge of both composition and strain, which can only be extracted by self-consistent methodologies. Here, we demonstrate the use of a quantitative high resolution transmission electron microscopy (QHRTEM) technique to obtain two-dimensional (2D) projected chemical maps of epitaxially grown Ge-Si:Si(001) islands, with high spatial resolution, at different crystallographic orientations. By a combination of these data with an iterative simulation, it was possible infer the three-dimensional (3D) chemical arrangement on the strained Ge-Si:Si(001) islands, showing a four-fold chemical distribution which follows the nanocrystal shape/symmetry. This methodology can be applied for a large variety of strained crystalline systems, such as nanowires, epitaxial islands, quantum dots and wells, and partially relaxed heterostructures.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1844-1845
Author(s):  
T Tanigaki ◽  
Y Nagakubo ◽  
K Hidaka

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2008 ◽  
Vol 1144 ◽  
Author(s):  
Han Sung Kim ◽  
Yoon Myung ◽  
Chang Hyun Kim ◽  
Seung Yong Bae ◽  
Jae-Pyoung Ahn ◽  
...  

ABSTRACTElectron tomography and high-resolution transmission electron microscopy were used to characterize the unique three-dimensional structures of helical or zigzagged GaN, ZnGa2O4 and Zn2SnO4 nanowires. The helical GaN nanowires adopt a helical structure that consists of six equivalent <0-111> growth directions with the axial [0001] direction. The ZnGa2O4 nanosprings have four equivalent <011> growth directions with the [001] axial direction. The zigzagged Zn2SnO4 nanowires consisted of linked rhombohedrons structure having the side edges matched to the <011> direction, and the [111] axial direction.


2005 ◽  
Vol 11 (5) ◽  
pp. 378-400 ◽  
Author(s):  
Christian Kübel ◽  
Andreas Voigt ◽  
Remco Schoenmakers ◽  
Max Otten ◽  
David Su ◽  
...  

Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (3D) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1–2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.


1990 ◽  
Vol 209 ◽  
Author(s):  
C.P. Burmester ◽  
M. Fendorf ◽  
L.T. Wille ◽  
R. Gronsky

Crystallographic defects and phase transformations in the system Y2Ba4Cu6+xO14+x(0≤≤4) are investigated by high resolution transmission electron microscopy (TEM) and static lattice, three dimensional Monte Carlo computer simulations. High resolution images of partially transformed (x=2 to x=l) material reveal a prevalence of CuO planar defects (stackingfaults) associated with the transformation and an absence of disturbance to the perovskite Ba-Y-Ba blocks. An atomic mechanism involving the intercalation and removal of extra CuO planes by partial dislocation climb, and requiring only a-b plane diffusion, is developed for the formation of such planar defects during changes in the layered YBaCuO crystal structure. Monte Carlo simulations based on the proposed transformation mechanism accurately reproduce the observed defects andknown equilibrium structures.


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