Practical Aspects of FIB Milling: Understanding Ion Beam/Material Interactions

2000 ◽  
Vol 6 (S2) ◽  
pp. 502-503
Author(s):  
B. I. Prenitzer ◽  
B. W. Kempshall ◽  
S. M. Schwarz ◽  
L. A. Giannuzzi ◽  
F. A. Stevie
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanometer Scale ◽  
Specimen Preparation ◽  
Site Specific ◽  
Vertical Milling ◽  
Wide Range ◽  
Beam Currents ◽  
High Degree

Nanometer scale, high resolution Ga+ ion probes, attainable in commercially available focused ion beam (FIB) instruments, allow imaging, sputtering and deposition operations to be performed with a high degree of spatial precision. Of particular interest is how this precision milling/deposition capability has enabled a wide range of site specific micromachining and microfabrication operations (e.g., TEM, SEM, SIMS, and AUGER specimen preparation and circuit modification). The applications of FIB instruments frequently involve the creation of high aspect ratio features (i.e., deep narrow trenches). Ideally, the sidewalls of an FIB milled feature should be vertical; however, it has been generally observed that the trenches tend to exhibit a gradual sloping. The observed deviation from vertical milling has been attributed to the redeposition of sputtered material, and is especially pervasive at high beam currents and confining trench geometries. A hole milled with an FIB tends to be widest at the top surface and taper down to a point at the bottom.

The Effect of Implanted Gallium on the Recrystallization of Amorphous Layers formed during FIB Milling of Silicon

2001 ◽  
Vol 7 (S2) ◽  
pp. 958-959
Author(s):  
S. Rubanov ◽  
P.R. Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Amorphous Layer ◽  
High Energy ◽  
Specimen Preparation ◽  
Silicon Sample ◽  
Cross Sectional ◽  
Wide Range ◽  
Average Size ◽  
Beam Currents

The focused ion beam (FIB) miller allows preparation of site-specific transmission electron microscopy (TEM) specimens from a wide range of materials in both cross-sectional and planar configurations [1,2]. However, radiation damage during exposure to the high-energy gallium beam may result in the formation of amorphous regions on thin film specimens. The thickness of such damage layers, on both sides of a TEM specimen, is comparable with the thickness required for lattice imaging. For example, the thickness of an amorphous layer in Si after 30 kV Ga+ FIB processing has been reported in the range from 15 [3] to 28 nm [4]. This problem limits the capabilities of FIB sample fabrication.The aim of this study was to investigate, in detail, the structure, composition and the thickness of the damage layers in Si specimens after milling with a gallium ion beam. Using a FEI xP200 FIB system, with 30 kV Ga+ ions, a row of trenches on a silicon sample was milled under different beam currents ranging from 150 to 6600 pA. The average size of such trenches was 15×10 μm wide and 1 μm deep. The trenches were then removed from the FIB and sputter coated with a thick Au film to preserve the trench surfaces from further damage during subsequent TEM specimen preparation steps. Cross-sectional TEM specimens of the trench walls were then prepared using standard FIB procedures [5]. Observations were made using a Philips CM 200 Field Emission Gun TEM operating at an accelerating voltage of 200 kV.

Site Specific TEM Specimen Preparation using an FIB/TEM System

2000 ◽  
Vol 6 (S2) ◽  
pp. 510-511 ◽  
Author(s):  
T. Kamino ◽  
T. Yaguchi ◽  
T. Ohnishi ◽  
K. Umemura ◽  
S. Tomimatsu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Site Specific ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Wide Range ◽  
Scanning Transmission

The focused ion beam(FIB) technique, developed for the microelectronics industry has become a major method for site specific transmission electron microscopy(TEM) specimen preparation in a wide range of materials[l]. The FIB lift-out technique has improved the specimen preparation procedures by removing complicated initial fabrication required prior to the FIB milling[2]. However, conventional FIB techniques are still having increased difficulty in meeting failure analysis needs from high technology industries such as microelectronics.We have developed a site specific TEM specimen preparation method using a combination of an FIB instrument and an intermediate voltage TEM equipped with a scanning attachment [3]. In this method, the specimen is mounted on an FIB-TEM compatible specimen holder, so that localization of the specific site can be carried out in the FIB and TEM using the same holder. The scanning electron imaging mode may be used to observe surface structures of the milled area, and the scanning transmission electron microscopy(STEM) mode may be used to observe structures inside of the milled surface.

A Method for Site Specific Characterization Using a Dedicated FIB System Combined With an Analyitical TEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 914-915
Author(s):  
T. Kamino ◽  
T. Yaguchi ◽  
H. Matsumoto ◽  
H. Kobayashi ◽  
H. Koike
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
System Stability ◽  
Specimen Preparation ◽  
Thin Specimen ◽  
Cross Sectional ◽  
Site Specific ◽  
Specimen Holder ◽  
High Resolution Tem

A method for site specific characterization of the materials using a dedicated focused ion beam(FIB) system and an analytical transmission electron microscope (TEM) was developed. Needless to say, in TEM specimen preparation using FIB system, stability of a specimen is quite important. The specimen stage employed in the developed FIB system is the one designed for high resolution TEM, and the specimen drift rate of the stage is less than lnm/min. In addition, FIB-TEM compatible specimen holder which allows milling of a specimen with the FIB system and observation of the specimen with the TEM without re-loading was developed. To obtain thin specimen from the area to be characterized correctly, confirmation of the area before final milling is needed. However, observation of cross sectional view in a FIB system is recommended because it causes damage by Ga ion irradiation. To solve this problem, we used a STEM unit as a viewer of FIB milled specimen.

Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

1997 ◽  
Vol 480 ◽  
Author(s):  
L. A. Giannuzzi ◽  
J. L. Drown ◽  
S. R. Brown ◽  
R. B. Irwin ◽  
F. A. Stevie
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Area ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Site Specific ◽  
Area Of Interest ◽  
Carbon Coated ◽  
A Site

AbstractA site specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. Focused ion beams are used to slice an electron transparent sliver of the specimen from a specific area of interest. Micromanipulation lift-out procedures are then used to transport the electron transparent specimen to a carbon coated copper grid for subsequent TEM analysis. The experimental procedures are described in detail and an example of the lift-out technique is presented.

scholarly journals Accurate Sub-micron Device Delayering of Plan View TEM Specimens By Ar Ion Milling

2021 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Specimen Preparation ◽  
New Materials ◽  
Ion Milling ◽  
Plan View ◽  
Site Specific ◽  
New Device ◽  
Device Structures

Abstract With the introduction of new materials, new device structures, and shrinking device dimensions, failure mechanisms evolve, which can make identifying defects challenging. Therefore, an accurate and controllable delayering process to target defects is desirable. We present a workflow comprised of bulk device delayering by broad Ar ion beam milling, plan view specimen preparation by focused ion beam tool, followed by site-specific delayering by concentrated Ar ion beam milling. The result is an accurately delayered device, without sample preparation-induced artifacts, that is suitable for uncovering defects during physical failure analysis.

scholarly journals Using a Focused Ion Beam (FIB) System to Extract TEM-Ready Samples from Complex Metallic and Ceramic Structures

1999 ◽  
Vol 7 (2) ◽  
pp. 12-15 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Richard Young ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Magnetic Media ◽  
Tem Analysis ◽  
Micro Fabrication ◽  
Site Specific ◽  
Transmission Electron ◽  
Two Sides

AbstractDriven by the analytical needs of microelectronics, magnetic media and micro-fabrication industries, focused ion beam (FIB) systems are now capable of milling and manipulating samples for the analysis of microstructure features having dimensions of 180 nm or less, A technique for locating and extracting site specific specimens for examination by transmission electron microscopy (TEM) has been developed. An identified feature can be located and precisely milled with an FIB system from two sides to prepare an ultrathin sample, and then extracted from the region with a glass rod micromanipulator onto a grid for TEM analysis. This specimen preparation method has been applied to semiconductor failure analysis and to the study of metallic and ceramic microsiructures with irregular topographies and complex mufti-layered components.

New Transmission Electron Microscope Characterization Techniques from Precision Focused Ion Beam Membranes

1999 ◽  
Vol 5 (S2) ◽  
pp. 886-887
Author(s):  
R. Hull ◽  
D. Dunn ◽  
J. Demarest ◽  
D.T. Mathes
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dissimilar Materials ◽  
Three Dimensions ◽  
Constant Thickness ◽  
Specimen Preparation ◽  
Contrast Imaging ◽  
Transmission Electron ◽  
Wide Range ◽  
Characterization Of Materials

The combination of focused ion beam (FIB) sputtering with transmission electron microscopy (TEM) offers new opportunities for the nanoscale characterization of materials. The FIB may be used to prepare membranes for TEM imaging which are: (i) Site selective, i.e. the membranes may be placed with sub-micron precision in all three dimensions, (ii) Largely free of differential sputtering artifacts, such that membranes may be prepared which are of constant thickness from structures with very dissimilar materials, and (iii) Of precisely known geometry.The challenges associated with FIB specimen preparation will also be discussed and are summarized in Figure 1: (a) Surface amorphization damage, (b) Residual differential sputtering effects, (c) Redeposition of sputtered material and (d) Membrane bowing due to internal or beaminduced stresses. It will be demonstrated that each of these effects can be sufficiently controlled to allow high quality diffraction contrast imaging in a wide range of materials.

Application of Focused Ion Beam to Atom Probe Tomography Specimen Preparation from Mechanically Alloyed Powders

2007 ◽  
Vol 13 (5) ◽  
pp. 347-353 ◽  
Author(s):  
Pyuck-Pa Choi ◽  
Tala'at Al-Kassab ◽  
Young-Soon Kwon ◽  
Ji-Soon Kim ◽  
Reiner Kirchheim
Keyword(s):  
Atom Probe Tomography ◽  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
High Energy ◽  
Specimen Preparation ◽  
Mechanically Alloyed ◽  
Cross Sectional ◽  
Beam Currents

Focused ion-beam milling has been applied to prepare needle-shaped atom probe tomography specimens from mechanically alloyed powders without the use of embedding media. The lift-out technique known from transmission electron microscopy specimen preparation was modified to cut micron-sized square cross-sectional blanks out of single powder particles. A sequence of rectangular cuts and annular milling showed the highest efficiency for sharpening the blanks to tips. First atom probe results on a Fe95Cu5 powder mechanically alloyed in a high-energy planetary ball mill for 20 h have been obtained. Concentration profiles taken from this powder sample showed that the Cu distribution is inhomogeneous on a nanoscale and that the mechanical alloying process has not been completed yet. In addition, small clusters of oxygen, stemming from the ball milling process, have been detected. Annular milling with 30 keV Ga ions and beam currents ≥50 pA was found to cause the formation of an amorphous surface layer, whereas no structural changes could be observed for beam currents ≤10 pA.

A Preparation Method of Diamond Specimens Using an Advanced FIB Microscopy for Micro and Nanoanalysis

2012 ◽  
Vol 531-532 ◽  
pp. 592-595
Author(s):  
Yi Qing Chen ◽  
Feng Zai Tang ◽  
Liang Chi Zhang
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Polycrystalline Diamond ◽  
Specimen Preparation ◽  
Atomic Lattice ◽  
Cross Sectional ◽  
Site Specific ◽  
Dual Beam

This paper reports the specimen preparation using an advanced dual beam focused ion beam (FIB) technique for bulk polycrystalline diamond (PCD) composites after dynamic friction polishing (DFP). The technique adapted allows for precisely processing diamond materials at the specific polishing track sites of PCD surface, from which large cross-sectional specimens for SEM/EDS/Raman microanalysis could be successfully created. In addition, an in-situ lift-out method was developed to prepare the site-specific HRTEM specimens which were thin enough for imaging the atomic lattice of diamond and for conducting EELS analysis.

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