scholarly journals Applications of Phase-Contrast STEM as Dose Efficient Method for High-resolution Imaging of Soft Materials

2020 ◽  
Vol 26 (S2) ◽  
pp. 2158-2160
Author(s):  
Roberto dos Reis ◽  
Anahita Pakzad ◽  
Paul Smeets ◽  
Vinayak Dravid
2001 ◽  
Vol 7 (S2) ◽  
pp. 904-905
Author(s):  
M. Lentzen ◽  
B. Jahnen ◽  
C.L. Jia ◽  
K. Urban

In electron microscopy high-resolution imaging of finest object structures is generally hampered by the influence of aberrations of the lens system, especially the high spherical aberration of the objective lens. The delocalization of contrast details induced by aberrations is especially strong for microscopes equipped with a field emission gun providing a high spatial coherence. in recent years a prototype of an aberration correction system has been constructed by Haider et al., following a suggestion by Rose, consisting of two hexapole elements and four additional round lenses. The correction system was adapted to a Philips CM 200 FEG ST microscope with an information limit of 0.13 nm. The alignment is carried out using aberration measurements deduced from Zemlin tableaus. By appropriately exciting the hexapole elements it is possible to reduce or even fully compensate the spherical aberration of the objective lens.With the freedom of a variable spherical aberration Cs new operation modes can be accessed that are not available in standard microscopes. with Cs = 0 and defocus Z = 0 pure amplitude contrast occurs, together with a vanishing contrast delocalization; phase contrast with a single, narrow pass-band up to the information limit can still be achieved by Z = ±7 nm, which introduces a delocalization of R = 0.13 nm. with Cs = 97 μm and Z = −18 nm the broad Scherzer pass-band for phase contrast can be extended to the information limit, with R = 0.35 nm. For the CM 200 Cs = 43 fim and Z = −12 nm still produces a high level of phase contrast, comparable with the extended Scherzer pass-band, but with R = 0.08 nm only. in the latter mode Scherzer’s defocus equals Lichte's defocus of least confusion.


Author(s):  
J.M. Cowley

By extrapolation of past experience, it would seem that the future of ultra-high resolution electron microscopy rests with the advances of electron optical engineering that are improving the instrumental stability of high voltage microscopes to achieve the theoretical resolutions of 1Å or better at 1MeV or higher energies. While these high voltage instruments will undoubtedly produce valuable results on chosen specimens, their general applicability has been questioned on the basis of the excessive radiation damage effects which may significantly modify the detailed structures of crystal defects within even the most radiation resistant materials in a period of a few seconds. Other considerations such as those of cost and convenience of use add to the inducement to consider seriously the possibilities for alternative approaches to the achievement of comparable resolutions.


Author(s):  
Max T. Otten ◽  
Wim M.J. Coene

High-resolution imaging with a LaB6 instrument is limited by the spatial and temporal coherence, with little contrast remaining beyond the point resolution. A Field Emission Gun (FEG) reduces the incidence angle by a factor 5 to 10 and the energy spread by 2 to 3. Since the incidence angle is the dominant limitation for LaB6 the FEG provides a major improvement in contrast transfer, reducing the information limit to roughly one half of the point resolution. The strong improvement, predicted from high-resolution theory, can be seen readily in diffractograms (Fig. 1) and high-resolution images (Fig. 2). Even if the information in the image is limited deliberately to the point resolution by using an objective aperture, the improved contrast transfer close to the point resolution (Fig. 1) is already worthwhile.


Author(s):  
Xiao Zhang

Electron holography has recently been available to modern electron microscopy labs with the development of field emission electron microscopes. The unique advantage of recording both amplitude and phase of the object wave makes electron holography a effective tool to study electron optical phase objects. The visibility of the phase shifts of the object wave makes it possible to directly image the distributions of an electric or a magnetic field at high resolution. This work presents preliminary results of first high resolution imaging of ferroelectric domain walls by electron holography in BaTiO3 and quantitative measurements of electrostatic field distribution across domain walls.


Author(s):  
George C. Ruben

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.


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