scholarly journals Diffraction contrast analysis of dislocations in 2D materials using true dark-field and 4D-STEM in SEM

2021 ◽  
Vol 27 (S1) ◽  
pp. 1816-1819
Author(s):  
Peter Denninger ◽  
Peter Schweizer ◽  
Christian Dolle ◽  
Erdmann Spiecker
Author(s):  
R. J. Horylev ◽  
L. E. Murr

Smith has shown by dark-field electron microscopy of extracted ThO2 particles from TD-nickel (2% ThO2) that they possess single crystal characteristics. It is generally assumed that these particle dispersions are incoherent. However, some diffraction effects associated with the particle images appeared to be similar to coherency strain fields. The present work will demonstrate conclusively that ThO2 dispersed particles in TD-nickel (2% ThO2) and TD-NiCr (2% ThO2, 20% Cr, Ni) are single crystals. Moreover, the diffraction contrast effects are extinction fringes. That is, these effects arise because of the particle orientation with respect to the electron beam and the extinction conditions for various operating reflections The particles are in fact incoherent.


1981 ◽  
Vol 10 ◽  
Author(s):  
L. J. Chen ◽  
J. W. Mayer ◽  
K. N. Tu

Transmission electron microscopy has been applied to study the formation and structure of epitaxial NiSi2 and CoSi2 thin films on silicon. Bright field and dark field imaging reveal the interface planes of faceted silicides through the strain contrast, analogous to the contrast of the precipitate-matrix interface of coherent or semicoherent precipitates. Superlattice dark field imaging depicts the distribution of twin-related and epitaxial silicides in these systems. { 111 } interfaces were found to be more prominent than {001} interfaces. Twin-related silicides were observed to cover more area on the substrate silicon than epitaxial silicides did.In situ annealing of nickel and cobalt thin films on silicon provides a unique means of investigation of the transformation from polycrystalline to epitaxial silicides. The NiSi2 transformation was found to be very rapid at 820°C, whereas the CoSi2 transformation appeared to be very sluggish. Furnace annealing confirmed that only a small fraction of CoSi2 transforms to epitaxial CoSi2 after annealing at 850°C for 4h.Diffraction contrast analysis has been applied to interfacial dislocations of epitaxial NiSi2/Si and CoSi2/Si systems. The dislocations were found to be of edge type with ⅙<112> and ½<110> Burgers' vectors. The average spacings are close to their respective theoretically predicted values.


2011 ◽  
Vol 17 (S2) ◽  
pp. 1098-1099
Author(s):  
S Rouvimov ◽  
P Moeck ◽  
E Rauch ◽  
S Nicolopoulos ◽  
W Neumann

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.


Author(s):  
C.B. Carter

Grain boundaries are particularly important in polycrystalline ceramics since it is found experimentally that the properties of the grain boundary region control many properties of the material. In ceramic materials, most interfaces between adjacent grains appear to take one of two forms: they can have a periodic structure if the two grains are in intimate contact - such boundaries would be similar to boundaries observed in metals; or there may be a film of amorphous material present in the interface - the width of such a film may be as little as ~lnm. it is also possible that a second crystalline phase is present at the boundary or, of course, the structure of the interface may consist of a combination of these. Until recently the main techniques used for studying grain boundaries in ceramics have been the strong-beam bright-field and weak-beam dark-field modes of diffraction contrast and lattice-fringe imaging techniques. Diffraction contrast techniques are particularly valuable for studying grain boundaries composed of dislocations where the dislocation spacing is greater than ~15nm or ~4nm for strong-beam and weak-beam respectively. The lattice-fringe imaging technique has been particularly valuable for the identification of boundaries which contain thin films of amorphous material. An additional technique using diffuse scattered electrons to study such boundaries has been shown to be susceptible to misinterpretation when the specimen is coated to prevent charging in the microscope.


Author(s):  
Patrick Veyssière ◽  
Gilles Hug

Defect contrast under weak-beam (WB) conditions was understood in the late sixties. Until then, details on dislocation dissociation below a resolution of about ξg/3 was only matter of speculation. WB elucidated a number of problems on dissociation at a resolution of 2 to 6nm. WB became much less fashionable in the late seventies, leaving considerable domains almost undocumented. At this time, WB remained used mostly by materials scientists in the area of semiconductors and ceramics. A renewed WB activity took place in the mid eighties with the initiation of R & D projects on ordered intermetallics in several countries. Ordered metal alloys are attractive since they offer high specific strengths that may increase with increasing test temperature above ambient up to 600°C-850°C. Unfortunately, most of these systems are so brittle that none of the expected substitutes for superalloys has been designed so far. Presently, Ti-Al is the system that receives the largest attention. Dislocation analysis is important in intermetallics since, excepted in multicomponent systems, the mobility of dislocations is dictated (i) by dissociation symmetries, (ii) by the transitions that dissociation may undergo dynamically and (iii) by the role of temperature on these. In view of the splitting distances that are currently observed, WB is perfectly adapted to this prospect. As a matter of facts, the potential of WB was originally exemplified by a report on four-fold dissociation in ordered Fe3Al. Upon request of the organizers of this session, the present contribution focuses on instrumental electron microscopy and on some aspects of contrast analysis under WB conditions. General information on the implications of core structure analysis on the mechanical properties of alloys together with limitations of dislocation analysis in TEM are reviewed elsewhere.


Author(s):  
S.C. Cheng ◽  
S. Sheinin

The boundaries between HCP and FCC phases in cobalt are generally expected to be of the type {111}FCC ‖ {001}HCP. Observations carried out by the authors indicate that the contrast exhibited by this type of boundary is very similar to the contrast exhibited by twin boundaries, as discussed by Sheinin and Corbett. These authors showed that images of twin boundaries consist of two intersecting sets of fringes with the possibility that one set is suppressed under certain diffraction conditions. The purpose of the work presented in this paper is to investigate the contrast exhibited by boundaries between the same two phases but which lie in a different habit plane.Experimental observations were carried out on boundaries in wedge crystals of cobalt, as shown schematically in Fig.1. The orientations of the crystals on either side of the boundary were obtained from selected area diffraction. For the bright and dark field images in Figs. 3a and 4a the orientations were found to be (12 )FCC on the left of the boundary and (100)HCP on the right. The boundary was found to be of the {111}FCC ‖ {312}HCP type. In the diffraction pattern obtained from the region containing the boundary shown in Fig. 2, the reflections (111)FCC and (002)HCP are identified.


1997 ◽  
Vol 3 (4) ◽  
pp. 352-363 ◽  
Author(s):  
C.P. Liu ◽  
R.E. Dunin-Borkowski ◽  
C.B. Boothroyd ◽  
P.D. Brown ◽  
C.J. Humphreys

Abstract: The compositional profile of a narrow layer of InAsxPl−x in InP has been determined using energy-filtered Fresnel contrast analysis, high-resolution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the three techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quantitatively and about the degree to which high-angle annular dark-field images of such materials are affected by inelastic scattering and strain.


2016 ◽  
Vol 17 (1) ◽  
pp. 115-127 ◽  
Author(s):  
Dudekula Althaf Basha ◽  
Julian M. Rosalie ◽  
Hidetoshi Somekawa ◽  
Takashi Miyawaki ◽  
Alok Singh ◽  
...  

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