A correlation of capacitive RF-MEMS reliability to AlN dielectric film spontaneous polarization

2009 ◽  
Vol 1 (1) ◽  
pp. 43-47 ◽  
Author(s):  
Eleni Papandreou ◽  
George Papaioannou ◽  
Tomas Lisec
Keyword(s):  
Electrical Properties ◽  
Spontaneous Polarization ◽  
Degradation Rate ◽  
Rf Mems ◽  
Dielectric Film ◽  
Capacitive Switches ◽  
Metal Insulator ◽  
Micro Electro Mechanical Systems ◽  
Metal Insulator Metal ◽  
Life Tests

This paper investigates the effect of spontaneous polarization of magnetron-sputtered aluminum nitride on the electrical properties and reliability of Radio Frequency – Micro-Electro-Mechanical Systems capacitive switches. The assessment is performed with the aid of application of thermally stimulated polarization currents in metal-insulator-metal capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than that expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.

scholarly journals Assessment of dielectric charging in micro-electro-mechanical system capacitive switches

2013 ◽  
Vol 26 (3) ◽  
pp. 239-245
Author(s):  
M. Koutsoureli ◽  
L. Michalas ◽  
G. Papaioannou
Keyword(s):  
Mechanical System ◽  
Material Properties ◽  
Micro Electro Mechanical System ◽  
Capacitive Switches ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Metal Insulator Metal ◽  
Simultaneous Assessment

The assessment of dielectric charging in MEMS capacitive switches is investigated. The information can be obtained only from simultaneous assessment of Metal-Insulator-Metal capacitance and MEMS capacitive switches the former allowing the determination of material properties and the latter of the device.

Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

2017 ◽  
Vol 47 (1) ◽  
pp. 677-683
Author(s):  
Cheng-Lin Cho ◽  
Hsuan-ling Kao ◽  
Yung-Hsien Wu ◽  
Li-Chun Chang ◽  
Chun-Hu Cheng
Keyword(s):  
Dielectric Film ◽  
Metal Insulator ◽  
Direct Fabrication ◽  
Metal Insulator Metal

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

2014 ◽  
Vol 116 (4) ◽  
pp. 1647-1653 ◽  
Author(s):  
O. Khaldi ◽  
F. Jomni ◽  
P. Gonon ◽  
C. Mannequin ◽  
B. Yangui
Keyword(s):  
Electrical Properties ◽  
Metal Insulator ◽  
Metal Insulator Metal
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