High-efficiency inverse class-F power amplifier using 3/4 spiral symmetric defected ground structure

2011 ◽  
Vol 3 (6) ◽  
pp. 621-625
Author(s):  
Shilei Jin ◽  
Jianyi Zhou ◽  
Lei Zhang
Keyword(s):  
Power Amplifier ◽  
High Performance ◽  
High Efficiency ◽  
Control Circuit ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Resonance Frequencies ◽  
Class F

In this article, the development of a high-efficiency power amplifier (PA) with the inverse class-F configuration and a novel 3/4 spiral defected ground structure (DGS) is presented. The proposed DGS structure has improved rejection characteristic and its resonance frequencies are more convenient to adjust than conventional symmetric and asymmetric spiral structure. The electromagnetic-simulated result shows that the proposed circuit has improved harmonic control performance with simplified structure and less return loss than the conventional microstrip harmonic control circuit. The 3/4 spiral harmonics control circuit (HCC) can be modeled by three parallel RLC resonators. Using the proposed structure a high-performance harmonic control circuit is designed for implementing an inverse class-F PA. For comparison, two inverse class-F PAs operating at 2.4 GHz have been implemented by the microstrip HCC and the proposed HCC, respectively. According to the experiment results, the size of the proposed inverse class-F PA is reduced by 20%, the power-added efficiency and the gain are increased by 4.8% and 1.5 dB, respectively.

scholarly journals A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2450
Author(s):  
Syed Muhammad Ammar Ali ◽  
S. M. Rezaul Hasan
Keyword(s):  
Power Amplifier ◽  
Peak Power ◽  
High Efficiency ◽  
Impedance Matching ◽  
Center Frequency ◽  
Dual Purpose ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Saturated Output Power ◽  
Class F

This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.

Design of a Miniaturized Class F Power Amplifier Using Capacitor Loaded Transmission Lines

Frequenz ◽  
2020 ◽  
Vol 74 (3-4) ◽  
pp. 145-152
Author(s):  
Ali Pirasteh ◽  
Saeed Roshani ◽  
Sobhan Roshani
Keyword(s):  
Power Amplifier ◽  
Mobile Communications ◽  
Transmission Lines ◽  
Low Voltage ◽  
Good Choice ◽  
Band Frequency ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Measurement Results ◽  
Class F

AbstractIn this paper, a new method to decrease the dimensions of the microstrip structures and reducing the overall size of the class F amplifiers is presented. First, by using the PHEMT transistor with a conventional harmonic control circuit (HCC), a low-voltage class F amplifier in the L band frequency at the operating frequency of 1.75 GHz is introduced, which named primitive class F power amplifier. Then, this amplifier is optimized by using capacitor loaded transmission lines (CLTLs). The measurement results of the amplifier show that by using the CLTL structure, the overall size has been reduced 85% (0.23 λg × 0.17 λg). The maximum power-added efficiency (PAE) of the power amplifier is about 77.5 % and the power gain which has been reached to 18.33 dB. The desirable features of this power amplifier, along with its very small size, make this power amplifier a good choice to use for the global system for mobile communications.

scholarly journals A Precise Harmonic Control Technique for High Efficiency Concurrent Dual-Band Continuous Class-F Power Amplifier

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 51864-51874 ◽  
Author(s):  
Zhenxing Yang ◽  
Yao Yao ◽  
Mingyu Li ◽  
Yi Jin ◽  
Tian Li ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Dual Band ◽  
Control Technique ◽  
Harmonic Control ◽  
Class F

scholarly journals Design of Class F Power Amplifier for 2.4ghz using Third Harmonics

2019 ◽  
Vol 8 (3) ◽  
pp. 7370-7375
Keyword(s):  
Power Amplifier ◽  
Large Scale ◽  
High Efficiency ◽  
Supply Voltage ◽  
Travelling Wave ◽  
Input Power ◽  
Engineering Research ◽  
Power Added Efficiency ◽  
Amplification Process ◽  
Class F

Historically, travelling wave tube amplifier (TWTA) has been a common type of Microwave amplifier used commonly in terrestrial and space application due to their high efficiency and power handling capacity. However due to their bulky nature and also being very expensive, it is difficult to use them commercially in a large scale. Inspired by the advantage such as very less development cost, minimum supply voltage, gradual degradation and numerous commercial applications, Solid State Power Amplifier (SSPA) has been the replacement to vacuum tube Technology. The efficiency of the amplifier is one of the most important task in the microwave engineering research. An important figure of merit, power-added efficiency (PAE), is the main focus. Hence in this paper, class F Power amplifier is designed for 2.4GHz frequency. Class F Amplifier is also called as wave shaping amplifier since the harmonics generated helps the amplification process. The class f PA is biased nearer to the class B amplifier (close cut-off area) so the transistor can move back and forth rapidly to produce the harmonics. The efficiency of class F amplifier depends on how many harmonics are used for the amplification process. Here, the amplification process is performed up to the third harmonics which provides 41.606 dBm output power with 27dBm input power. Also a gain of more than 20.277dBm is achieved when the input given is 27dBm. Several other results like reflection Coefficient and transmission coefficient simulations has also been provided with the power added efficiency (PAE) of 75.402 achieved has also been simulated.

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