Complementary Metal Oxide Semiconductor Cantilever Arrays on a Single Chip:  Mass-Sensitive Detection of Volatile Organic Compounds

2002 ◽  
Vol 74 (13) ◽  
pp. 3084-3095 ◽  
Author(s):  
Dirk Lange ◽  
Christoph Hagleitner ◽  
Andreas Hierlemann ◽  
Oliver Brand ◽  
Henry Baltes
Keyword(s):  
Volatile Organic Compounds ◽  
Metal Oxide ◽  
Organic Compounds ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
Single Chip ◽  
Cantilever Arrays ◽  
Volatile Organic

High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds

Nano Letters ◽  
2016 ◽  
Vol 16 (7) ◽  
pp. 4508-4515 ◽  
Author(s):  
Soo-Yeon Cho ◽  
Hae-Wook Yoo ◽  
Ju Ye Kim ◽  
Woo-Bin Jung ◽  
Ming Liang Jin ◽  
...  
Keyword(s):  
High Resolution ◽  
Volatile Organic Compounds ◽  
Metal Oxide ◽  
Organic Compounds ◽  
Nanowire Array ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Nanowire ◽  
Volatile Organic ◽  
P Type

Zeolite Modified Vanadium Pentoxide Sensors for the Selective Detection of Volatile Organic Compounds

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3349-3354 ◽  
Author(s):  
David C. Pugh ◽  
Ivan P. Parkin
Keyword(s):  
Machine Learning ◽  
Volatile Organic Compounds ◽  
Metal Oxide ◽  
Organic Compounds ◽  
Gas Sensors ◽  
Vanadium Pentoxide ◽  
Zeolite Y ◽  
Oxide Semiconductor ◽  
Central Nervous System Damage ◽  
Volatile Organic

ABSTRACTExposure to volatile organic compounds can lead to asphyxiation, pneumonia like conditions, comas, seizures and irreversible lung, kidney and central nervous system damage. Volatile organics are additionally extremely flammable and explosive, making their early detection in the immediate environment increasingly important. Metal oxide semiconductor (MOS) gas sensors present a potential technology to detect such gases.Metal oxide semiconducting (MOS) gas sensors represent a cheap, robust and sensitive technology for detecting volatile organic compounds. An array of five thick film MOS gas sensors was fabricated, based on vanadium pentoxide inks. Production took place using a commercially available screen printer, a 3 x 3 mm alumina substrate containing interdigitated electrodes and a platinum heater track. V2O5inks were modified using zeolite beta, zeolite Y, mordenite & ZSM5 admixtures. Sensors were exposed to three common reducing gases, namely acetone, ethanol, and toluene, and a machine learning technique was applied to differentiate between the different gases. Sensors produced strong responses to all gases. Zeolite modified sensors were found to increase the responsiveness of the sensors compared to umodified V2O5in a number of cases. Machine learning techniques were incorporated to test the selectivity of the sensors. A high level of accuracy was achieved in determining the class of gas observed.

High Sensitive Detection of Volatile Organic Compounds Using Tin Oxide Semiconductor Sensors with Hot-Wire-Type Structures

2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2152-2152
Author(s):  
Tatsuya Ohishi ◽  
Yasuhisa Kitagawa ◽  
Hirokazu Mitsuhashi ◽  
Mikiya Nakatani
Keyword(s):  
Volatile Organic Compounds ◽  
Organic Compounds ◽  
Tin Oxide ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
Hot Wire ◽  
Volatile Organic ◽  
Semiconductor Sensors

scholarly journals Microhotplates for Metal Oxide Semiconductor Gas Sensor Applications—Towards the CMOS-MEMS Monolithic Approach

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 557 ◽  
Author(s):  
Haotian Liu ◽  
Li Zhang ◽  
King Li ◽  
Ooi Tan
Keyword(s):  
Metal Oxide ◽  
Gas Sensors ◽  
Complementary Metal Oxide Semiconductor ◽  
Micro Electro Mechanical System ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Single Chip ◽  
Sensor Applications ◽  
Semiconductor Gas Sensor ◽  
Mems Technology

The recent development of the Internet of Things (IoT) in healthcare and indoor air quality monitoring expands the market for miniaturized gas sensors. Metal oxide gas sensors based on microhotplates fabricated with micro-electro-mechanical system (MEMS) technology dominate the market due to their balance in performance and cost. Integrating sensors with signal conditioning circuits on a single chip can significantly reduce the noise and package size. However, the fabrication process of MEMS sensors must be compatible with the complementary metal oxide semiconductor (CMOS) circuits, which imposes restrictions on the materials and design. In this paper, the sensing mechanism, design and operation of these sensors are reviewed, with focuses on the approaches towards performance improvement and CMOS compatibility.

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

Sign in / Sign up

Export Citation Format

Share Document