High-Resolution Vertical Polarization Excited Dark-Field Microscopic Imaging of Anisotropic Gold Nanorods for the Sensitive Detection and Spatial Imaging of Intracellular microRNA-21

2020 ◽  
Vol 92 (19) ◽  
pp. 13118-13125
Author(s):  
Jia Jun Liu ◽  
Hui Hong Yan ◽  
Qiang Zhang ◽  
Peng Fei Gao ◽  
Chun Mei Li ◽  
...  
Keyword(s):  
High Resolution ◽  
Gold Nanorods ◽  
Dark Field ◽  
Sensitive Detection ◽  
Vertical Polarization ◽  
Microscopic Imaging

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Effect of strain on ADF-STEM high-resolution images

1991 ◽  
Vol 49 ◽  
pp. 666-667
Author(s):  
M. Kelly ◽  
D.M. Bird
Keyword(s):  
High Resolution ◽  
Strong Influence ◽  
Intensity Variation ◽  
Dark Field ◽  
Atomic Resolution ◽  
Strain Fields ◽  
High Resolution Image ◽  
Annular Dark Field ◽  
High Resolution Images ◽  
Interesting Alternative

It is well known that strain fields can have a strong influence on the details of HREM images. This, for example, can cause problems in the analysis of edge-on interfaces between lattice mismatched materials. An interesting alternative to conventional HREM imaging has recently been advanced by Pennycook and co-workers where the intensity variation in the annular dark field (ADF) detector is monitored as a STEM probe is scanned across the specimen. It is believed that the observed atomic-resolution contrast is correlated with the intensity of the STEM probe at the atomic sites and the way in which this varies as the probe moves from cell to cell. As well as providing a directly interpretable high-resolution image, there are reasons for believing that ADF-STEM images may be less suseptible to strain than conventional HREM. This is because HREM images arise from the interference of several diffracted beams, each of which is governed by all the excited Bloch waves in the crystal.

Design of a new objective lens for an HB-501A STEM

1991 ◽  
Vol 49 ◽  
pp. 416-417
Author(s):  
Earl J. Kirkland ◽  
Robert J. Keyse
Keyword(s):  
High Resolution ◽  
Spherical Aberration ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Objective Lens ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
High Resolution Microscopy

An ultra-high resolution pole piece with a coefficient of spherical aberration Cs=0.7mm. was previously designed for a Vacuum Generators HB-501A Scanning Transmission Electron Microscope (STEM). This lens was used to produce bright field (BF) and annular dark field (ADF) images of (111) silicon with a lattice spacing of 1.92 Å. In this microscope the specimen must be loaded into the lens through the top bore (or exit bore, electrons traveling from the bottom to the top). Thus the top bore must be rather large to accommodate the specimen holder. Unfortunately, a large bore is not ideal for producing low aberrations. The old lens was thus highly asymmetrical, with an upper bore of 8.0mm. Even with this large upper bore it has not been possible to produce a tilting stage, which hampers high resolution microscopy.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

High-resolution EM investigation about effect of stress on formation of ω-phase crystals in β-tttanium alloys

1996 ◽  
Vol 54 ◽  
pp. 1006-1007
Author(s):  
E. Sukedai ◽  
M. Shimoda ◽  
A. Fujita ◽  
H. Nishizawa ◽  
H. Hashimoto
Keyword(s):  
High Resolution ◽  
Titanium Alloys ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Zone Refining ◽  
Ω Phase ◽  
Α Phase ◽  
Nucleation Sites ◽  
Resolution Electron ◽  
Bcc Structure

ω-phase particles formed in β-titanium alloys (bcc structure) act important roles to their mechanical properties such as ductility and hardness. About the ductility, fine ω-phase particles in β–titanium alloys improve the ductility, because ω-phase crystals becomes nucleation sites of α-phase and it is well known that (β+α) duplex alloys have higher ductility. In the present study, the formation sites and the formation mechanism of ω-phase crystals due to external stress and aging are investigated using the conventional and high resolution electron microscopy.A β-titanium alloy (Til5Mo5Zr) was supplied by Kobe Steel Co., and a single crystal was prepared by a zone refining method. Plates with {110} surface were cut from the crystal and were pressured hydrostatically, and stressed by rolling and tensile testing. Specimens for aging with tensile stress were also prepared from Ti20Mo polycrystals. TEM specimens from these specimens were prepared by a twin-jet electron-polishing machine. A JEM 4000EX electron microscope operated at 400k V was used for taking dark field and HREM images.

Towards 1-Ångstrom-resolution STEM

1993 ◽  
Vol 51 ◽  
pp. 996-997
Author(s):  
H.S. von Harrach ◽  
D.E. Jesson ◽  
S.J. Pennycook
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Phase Contrast ◽  
Spherical Aberration ◽  
A Priori ◽  
Dark Field ◽  
Image Resolution ◽  
Objective Lens ◽  
Annular Dark Field ◽  
First Results

Phase contrast TEM has been the leading technique for high resolution imaging of materials for many years, whilst STEM has been the principal method for high-resolution microanalysis. However, it was demonstrated many years ago that low angle dark-field STEM imaging is a priori capable of almost 50% higher point resolution than coherent bright-field imaging (i.e. phase contrast TEM or STEM). This advantage was not exploited until Pennycook developed the high-angle annular dark-field (ADF) technique which can provide an incoherent image showing both high image resolution and atomic number contrast.This paper describes the design and first results of a 300kV field-emission STEM (VG Microscopes HB603U) which has improved ADF STEM image resolution towards the 1 angstrom target. The instrument uses a cold field-emission gun, generating a 300 kV beam of up to 1 μA from an 11-stage accelerator. The beam is focussed on to the specimen by two condensers and a condenser-objective lens with a spherical aberration coefficient of 1.0 mm.

Gold nanorods-based lateral flow biosensors for sensitive detection of nucleic acids

2021 ◽  
Vol 188 (4) ◽  
Author(s):  
Qingcai Yu ◽  
Jing Zhang ◽  
Wanwei Qiu ◽  
Kun Li ◽  
Lisheng Qian ◽  
...  
Keyword(s):  
Nucleic Acids ◽  
Gold Nanorods ◽  
Lateral Flow ◽  
Sensitive Detection

scholarly journals Analytical High-resolution Electron Microscopy Reveals Organ-specific Nanoceria Bioprocessing

2017 ◽  
Vol 46 (1) ◽  
pp. 47-61 ◽  
Author(s):  
Uschi M. Graham ◽  
Robert A. Yokel ◽  
Alan K. Dozier ◽  
Lawrence Drummy ◽  
Krishnamurthy Mahalingam ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Transmission Electron ◽  
Analytical Electron ◽  
Organ Specific

This is the first utilization of advanced analytical electron microscopy methods, including high-resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy, electron energy loss spectroscopy, and energy-dispersive X-ray spectroscopy mapping to characterize the organ-specific bioprocessing of a relatively inert nanomaterial (nanoceria). Liver and spleen samples from rats given a single intravenous infusion of nanoceria were obtained after prolonged (90 days) in vivo exposure. These advanced analytical electron microscopy methods were applied to elucidate the organ-specific cellular and subcellular fate of nanoceria after its uptake. Nanoceria is bioprocessed differently in the spleen than in the liver.

Point Defect Clusters and Dislocations in FIB Irradiated Nanocrystalline Aluminum Films: An Electron Tomography and Aberration-Corrected High-Resolution ADF-STEM Study

2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  
Keyword(s):  
High Resolution ◽  
Point Defect ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Dark Field ◽  
Internal Stresses ◽  
Defect Clusters ◽  
Point Defect Clusters ◽  
Aberration Corrected

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

Sign in / Sign up

Export Citation Format

Share Document