Solution Processable Cu(II)macrocycle for the Formation of Cu2O Thin Film on Indium Tin Oxide and Its Application for Water Oxidation

2018 ◽  
Vol 122 (29) ◽  
pp. 16510-16518 ◽  
Author(s):  
Mandana Amiri ◽  
Maryam Fallahi ◽  
Abolfazl Bezaatpour ◽  
Roxana Jijie ◽  
Mehran Nozari-asbmarz ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Water Oxidation ◽  
Cu2o Thin Film ◽  
Solution Processable

Development of ternary iron vanadium oxide semiconductors for applications in photoelectrochemical water oxidation

RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4992-4999 ◽  
Author(s):  
Harahari Mandal ◽  
Sanjib Shyamal ◽  
Paramita Hajra ◽  
Aparajita Bera ◽  
Debasis Sariket ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Water Oxidation ◽  
Oxide Semiconductors ◽  
Coated Glass ◽  
Photoelectrochemical Water Oxidation

Herein, we report the synthesis and photoelectrochemical characterizations of n-type Fe–V-oxide semiconductors thin film via drop cast method in different proportions onto indium tin oxide coated glass followed by annealing in air at 500 °C for 3 h.

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

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