P-41: Novel Fabricating Process for Nanocrystalline Indium Tin Oxide Thin Film for Flexible Substrate by Low-temperature One-time Mixing and Oxidation (LOMO)

2003 ◽  
Vol 34 (1) ◽  
pp. 354
Author(s):  
Sung-Jei Hong ◽  
Yong-Hoon Kim ◽  
Chan-Jae Lee ◽  
Jeong-In Han
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Flexible Substrate ◽  
Oxide Thin Film

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

Low-Temperature Sintering of Indium Tin Oxide Thin Film Using Split Gliding Arc Plasma

2008 ◽  
Vol 47 (8) ◽  
pp. 6956-6959 ◽  
Author(s):  
Yukikazu Ito ◽  
Hajime Shiki ◽  
Hirofumi Takikawa ◽  
Takeshi Ootsuka ◽  
Takashi Okawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Sintering ◽  
Arc Plasma ◽  
Gliding Arc ◽  
Gliding Arc Plasma

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

scholarly journals Indium tin oxide thin film based saturable absorber for Q-switching in C-band region

2019 ◽  
Vol 1371 ◽  
pp. 012018
Author(s):  
N U H H Zalkepali ◽  
N A Awang ◽  
Y R Yuzaile ◽  
Z Zakaria ◽  
A A Latif ◽  
...  
Keyword(s):  
Thin Film ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Band Region ◽  
Q Switching

Experimental investigation of spin Hall effect in indium tin oxide thin film

2013 ◽  
Vol 103 (18) ◽  
pp. 182404 ◽  
Author(s):  
Z. Qiu ◽  
T. An ◽  
K. Uchida ◽  
D. Hou ◽  
Y. Shiomi ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Investigation ◽  
Hall Effect ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Hall Effect ◽  
Oxide Thin Film
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