Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

scholarly journals Conductive Atomic Force Microscopy Study of Doped Tin Oxide Thin Film

2010 ◽  
Vol 16 (S2) ◽  
pp. 1562-1563
Author(s):  
L Fang ◽  
R Korotkov
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Tin Oxide ◽  
Microscopy Study ◽  
Oxide Thin Film ◽  
Atomic Force Microscopy Study ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

Zinc Oxide Thin Film Morphology as Function of Substrate Position During Sputtering Process

2021 ◽  
Vol 900 ◽  
pp. 103-111
Author(s):  
Christelle Habis ◽  
Jean Zaraket ◽  
Michel Aillerie
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Cost ◽  
Linear Increase ◽  
Oxide Thin Film ◽  
Central Position ◽  
Zinc Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Great Transparency

Transparent conductive oxides are materials combining great transparency with high conductivity. In photovoltaic applications, they are developed under thin layer for the realization of upper electrodes of solar cells. Among transparent oxide materials, Zinc Oxide (ZnO) presents unique properties, starting with its first qualities to be abundant, low-cost and non-toxic oxide. Zinc Oxide thin film was deposited on rectangular glass substrate by magnetron sputtering. After an overview of the properties expected for good transparent conductive materials, the effect of distance from the center of the cell on the morphology of the film was investigated by Atomic Force Microscopy (AFM). The scanning was done on different area of the sample as function of the distance from the central position of the direct sputtering jet. As far as the distance increased, it has been noticed a quasi-linear increase in thickness of the ZnO deposited film and a change in the grain shape from spherical to pyramidal with an increase in the size of the particles. Controlling the sputtering distance allows the control of texture, thus of the Haze factor, the photo-generation of excitons, as well the optical transmission of the TCO layer and finally an improvement in the efficiency of the so-built photovoltaic cells.

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

scholarly journals Evaluation of surface roughness and nanostructure of indium tin oxide (ITO) films by atomic force microscopy

Scanning ◽  
2008 ◽  
Vol 30 (3) ◽  
pp. 232-239 ◽  
Author(s):  
G. Kavei ◽  
Y. Zare ◽  
A. Mohammadi Gheidari
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Films

scholarly journals Indium tin oxide thin film based saturable absorber for Q-switching in C-band region

2019 ◽  
Vol 1371 ◽  
pp. 012018
Author(s):  
N U H H Zalkepali ◽  
N A Awang ◽  
Y R Yuzaile ◽  
Z Zakaria ◽  
A A Latif ◽  
...  
Keyword(s):  
Thin Film ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Band Region ◽  
Q Switching
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