Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
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Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
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Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

Conjugated Polymer with On-Chain Pt(II) Complex for Resistive Random-Access Memory Device

2012 ◽  
Vol 213 (23) ◽  
pp. 2472-2478 ◽  
Author(s):  
Wenpeng Lin ◽  
Huibin Sun ◽  
Shujuan Liu ◽  
Huiran Yang ◽  
Shanghui Ye ◽  
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Keyword(s):  
Conjugated Polymer ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory

Zirconia quantum dots for a nonvolatile resistive random access memory device

2019 ◽  
Vol 20 (12) ◽  
pp. 1698-1705 ◽  
Author(s):  
Xiang-lei He ◽  
Rui-jie Tang ◽  
Feng Yang ◽  
Mayameen S. Kadhim ◽  
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Keyword(s):  
Quantum Dots ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals A new light-responsive resistive random-access memory device containing hydrogen-bonded complexes

2021 ◽  
Vol 404 ◽  
pp. 112914
Author(s):  
Thamil Selvi Velayutham ◽  
M.S. Azmina ◽  
Vijayan Manickam-Achari ◽  
Alejandro Roche ◽  
Rinaa Ramesh ◽  
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Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Bonded Complexes ◽  
Hydrogen Bonded
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