Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device

2021 ◽  
pp. 2101018
Author(s):  
Jong‐Whi Park ◽  
Chang‐Jin Moon ◽  
Young‐Min Ju ◽  
Yong‐Rae Jang ◽  
Simon S. Park ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Oxide Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Annealing Process ◽  
Depth Gradient ◽  
Access Memory ◽  
Reduced Graphene

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

Conjugated Polymer with On-Chain Pt(II) Complex for Resistive Random-Access Memory Device

2012 ◽  
Vol 213 (23) ◽  
pp. 2472-2478 ◽  
Author(s):  
Wenpeng Lin ◽  
Huibin Sun ◽  
Shujuan Liu ◽  
Huiran Yang ◽  
Shanghui Ye ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory

Scanning transmission X-ray microscopy probe forin situmechanism study of graphene-oxide-based resistive random access memory

2013 ◽  
Vol 21 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Hyun Woo Nho ◽  
Jong Yun Kim ◽  
Jian Wang ◽  
Hyun-Joon Shin ◽  
Sung-Yool Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Scanning Transmission

Here, anin situprobe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To performin situSTXM studies at the CK- and OK-edges, both the RRAM junctions and theI0junction were fabricated on a single Si3N4membrane to obtain local XANES spectra at these absorption edges with more delicateI0normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the OK-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed fromex situtransmission electron microscope studies.

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