Emergence of Deep Traps in Long-Term Thermally Stressed CH3NH3PbI3 Perovskite Revealed by Thermally Stimulated Currents

2022 ◽  
pp. 552-558
Author(s):  
Motiur R. Khan ◽  
Jonas A. Schwenzer ◽  
Jonathan Lehr ◽  
Ulrich W. Paetzold ◽  
Uli Lemmer
Keyword(s):  
Thermally Stimulated Currents ◽  
Deep Traps ◽  
Thermally Stressed

scholarly journals Specific Features of Photoconductivity of Tl1-xIn1-xSnxSe2 Monocrystals at Low Temperatures

2019 ◽  
Vol 20 (1) ◽  
pp. 50-55
Author(s):  
O.V. Novosad ◽  
G.L. Myronchuk ◽  
S.P. Danylchuk ◽  
O.V. Zamurueva ◽  
L.V. Piskach ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Energy ◽  
Low Temperatures ◽  
Relaxation Processes ◽  
Directional Crystallization ◽  
Thermally Stimulated Currents ◽  
Temperature Range ◽  
Thermostimulated Currents

The photoconductivity spectra in the temperature range T≈36-200 K and the spectra of thermostimulated currents in the temperature range T≈70-300 K of Tl1-xIn1-xSnxSe2 single crystals obtained by directional crystallization of Bridgman-Stockbarger have been studied. The induced photoconductivity and long-term photoconductivity relaxation processes have been found. To interpret the found results, a model of two-center recombination has been suggested. It is illustrated that the role of the r-centers of slow recombination are formed by Tl vacancies. On the basis of the studies of the spectra of thermally stimulated currents, the thermal energy of electrons activation with t-levels of adhesion has been determined.

Achieving long-term zero-thermal-quenching with the assistance of carriers from deep traps

2018 ◽  
Vol 6 (12) ◽  
pp. 2978-2982 ◽  
Author(s):  
Xiaotong Fan ◽  
Wenbo Chen ◽  
Shuangyu Xin ◽  
Zhichao Liu ◽  
Min Zhou ◽  
...  
Keyword(s):  
Thermal Quenching ◽  
Deep Traps

Achieving long-term zero-thermal-quenching in a Sr3SiO5:Eu2+,Tm3+-based wLED.

scholarly journals Short-Term Non-Decaying Mechanoluminescence in Li2MgGeO4:Mn2+

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1410
Author(s):  
Yi-Fei Zhu ◽  
Tong Jiang ◽  
Lei Li ◽  
Long-Xiang Cheng ◽  
Jun-Cheng Zhang
Keyword(s):  
Stress Distribution ◽  
Mechanical Stimulation ◽  
Light Sources ◽  
Short Term ◽  
Deep Traps ◽  
Shallow Traps

Trap-controlled mechanoluminescent (ML) materials characterized by reproducible mechanoluminescence (ML) after irradiation recharging have shown attractive prospects in applications including stress distribution visualization, stress-driven light sources, and anti-counterfeiting. However, these materials generally suffer from the difficulty of achieving non-decaying ML when subjected to continuous mechanical stimulation. Herein, we develop a trap-controlled reproducible ML material, Li2MgGeO4:Mn2+, and report its short-term non-decaying ML behavior. Investigation of trap properties suggests that the unique non-decaying ML behavior should arise from the deep traps existing in Li2MgGeO4:Mn2+, which provide electron replenishment for shallow traps that release small numbers of electrons during short-term cyclic friction. Our results are expected to provide a reference for the ultimate achievement of long-term non-decaying ML in such materials.

GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing

2009 ◽  
Vol 1195 ◽  
Author(s):  
Erica Ann Douglas ◽  
David P. Cheney ◽  
Ke Hung P. Chen ◽  
Chih-Yang P. Chang ◽  
Lii-Cherng P. Leu ◽  
...  
Keyword(s):  
Stress Test ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Dc Bias ◽  
Thermally Stressed

AbstractGaAs based metamorphic and pseudomorphic high electron mobility transistors (HEMTs) under DC and thermal stress were studied. InAlAs/InGaAs MHEMTs grown on GaAs substrates were stressed at a drain voltage bias of 2.7V for 36 hours as well as thermally stressed at 250°C for 36 hours. Under both stress conditions, the drain current density decreased about 12.5%. The gate current, however, increased more after the thermal storage as opposed to DC bias. Reaction of the Ohmic contact with the underlying semiconductor was the main cause of degradation after thermal stressing. Transmission electron microscopy verified that gate sinking occurred in devices that underwent DC bias stressing. InGaAs pHEMTs that received a 1000 hour lifetime stress test from a commercial vendor showed similar degradation as virgin devices when stressed under DC bias for 24 hours. Virgin devices that were thermally stressed while undergoing DC bias showed minimal degradation up to 120°C, but exhibited catastrophic failure at 140°C.

Therapy and prevention for mental health: What if mental diseases are mostly not brain disorders?

2019 ◽  
Vol 42 ◽  
Author(s):  
John P. A. Ioannidis
Keyword(s):  
Mental Health ◽  
Mental Disease ◽  
Brain Disorders ◽  
Social Stressors ◽  
Labor Education ◽  
Mental Diseases ◽  
Long Term Follow Up ◽  
Political Decisions

AbstractNeurobiology-based interventions for mental diseases and searches for useful biomarkers of treatment response have largely failed. Clinical trials should assess interventions related to environmental and social stressors, with long-term follow-up; social rather than biological endpoints; personalized outcomes; and suitable cluster, adaptive, and n-of-1 designs. Labor, education, financial, and other social/political decisions should be evaluated for their impacts on mental disease.

Conceptual short-term memory (CSTM) supports core claims of Christiansen and Chater

2016 ◽  
Vol 39 ◽  
Author(s):  
Mary C. Potter
Keyword(s):  
Working Memory ◽  
Rapid Serial Visual Presentation ◽  
Language Comprehension ◽  
Short Term Memory ◽  
Visual Presentation ◽  
Long Term Memory ◽  
Short Term ◽  
Term Memory ◽  
Use Of Knowledge

AbstractRapid serial visual presentation (RSVP) of words or pictured scenes provides evidence for a large-capacity conceptual short-term memory (CSTM) that momentarily provides rich associated material from long-term memory, permitting rapid chunking (Potter 1993; 2009; 2012). In perception of scenes as well as language comprehension, we make use of knowledge that briefly exceeds the supposed limits of working memory.

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