Diminished Trap-Induced Leakage Current at the Organic/Electrode Interface for High-Performance Organic Photodetectors

2021 ◽  
Author(s):  
Huan Cao ◽  
Yichuan Si ◽  
Yuan Xie ◽  
Jingwen Li ◽  
Guanghong Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Organic Electrode ◽  
Electrode Interface ◽  
Organic Photodetectors

Organic electrode materials for non-aqueous, aqueous, and all-solid-state Na-ion batteries

2021 ◽  
Author(s):  
Kathryn Holguin ◽  
Motahareh Mohammadiroudbari ◽  
Kaiqiang Qin ◽  
Chao Luo
Keyword(s):  
Solid State ◽  
High Performance ◽  
Electrode Materials ◽  
Low Cost ◽  
Li Ion Batteries ◽  
Organic Electrode ◽  
Li Ion

Na-ion batteries (NIBs) are promising alternatives to Li-ion batteries (LIBs) due to the low cost, abundance, and high sustainability of sodium resources. However, the high performance of inorganic electrode materials...

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO

2021 ◽  
Vol 42 (2) ◽  
pp. 241-249
Author(s):  
Jian-bin WANG ◽  
◽  
Xiao-sheng TANG ◽  
Bi ZHOU ◽  
Xia-hui ZENG ◽  
...  
Keyword(s):  
Small Molecule ◽  
High Performance ◽  
Organic Photodetectors

High Performance Broadband Photomultiplication-type Quaternary Organic Photodetectors

2021 ◽  
Vol 42 (07) ◽  
pp. 1057-1064
Author(s):  
Jian-bin WANG ◽  
◽  
Xiao-sheng TANG ◽  
Bi ZHOU ◽  
Xia-hui ZENG ◽  
...  
Keyword(s):  
High Performance ◽  
Organic Photodetectors

Pyrazine-based organic electrode material for high-performance supercapacitor applications

2022 ◽  
Vol 48 ◽  
pp. 103953
Author(s):  
Madan R. Biradar ◽  
Akshay V. Salkar ◽  
Pranay P. Morajkar ◽  
Sheshanath V. Bhosale ◽  
Sidhanath V. Bhosale
Keyword(s):  
Electrode Material ◽  
High Performance ◽  
Organic Electrode ◽  
Supercapacitor Applications

scholarly journals Transformerless Quasi-Z-Source Inverter to Reduce Leakage Current for Single-Phase Grid-Tied Applications

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 312 ◽  
Author(s):  
Woo-Young Choi ◽  
Min-Kwon Yang
Keyword(s):  
Leakage Current ◽  
Power Efficiency ◽  
High Performance ◽  
Single Phase ◽  
Power Devices ◽  
Common Mode Voltage ◽  
Control Scheme ◽  
Frequency Components ◽  
The Common ◽  
Current Reduction

The conventional single-phase quasi-Z-source (QZS) inverter has a high leakage current as it is connected to the grid. To address this problem, this paper proposes a transformerless QZS inverter, which can reduce the leakage current for single-phase grid-tied applications. The proposed inverter effectively alleviates the leakage current problem by removing high-frequency components for the common-mode voltage. The operation principle of the proposed inverter is described together with its control strategy. A control scheme is presented for regulating the DC-link voltage and the grid current. A 1.0 kW prototype inverter was designed and tested to verify the performance of the proposed inverter. Silicon carbide (SiC) power devices were applied to the proposed inverter to increase the power efficiency. The experimental results showed that the proposed inverter achieved high performance for leakage current reduction and power efficiency improvement.

Optimization of Copper Top-Side Metallization for High Performance SiC-Devices

2013 ◽  
Vol 740-742 ◽  
pp. 801-804 ◽  
Author(s):  
Tim Behrens ◽  
Thomas Suenner ◽  
Eckart Geinitz ◽  
Andreas Schletz ◽  
Lothar Frey
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
High Reliability ◽  
Diffusion Barriers ◽  
Copper Layer ◽  
Copper Metallization ◽  
Adhesion Promoters ◽  
Peel Tests

While aluminum-based metallization schemes on Si have been optimized for the last decades, only few investigations have been done on copper metallization with SiC-devices. Thus, in this work the mechanical as well as the electrical interactions of this metallization system have been analyzed and optimized for SiC-devices in high reliability applications. For optimizing the adhesion of the copper metallization stack on SiC devices, different metallization schemes consisting of adhesion promoters (Ti, Cr, Al, Ta, WTi), diffusion barriers (TiN, Ta, WTi), and the final copper layer have been tested by peel-tests. For investigating the electrical interactions TLM measurements as well as leakage-current measurements have been done on copper metalized SiC samples.

scholarly journals In situ lithiated quinone cathode for ALD/MLD-fabricated high-power thin-film battery

2018 ◽  
Vol 6 (16) ◽  
pp. 7027-7033 ◽  
Author(s):  
Mikko Nisula ◽  
Maarit Karppinen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
High Capacity ◽  
Reaction Rates ◽  
Power Sources ◽  
Thin Film Battery ◽  
Microelectronic Devices ◽  
Ultrathin Layers ◽  
Organic Electrode

We demonstrate that the high-capacity organic electrode material, p-benzoquinone, is able to sustain ultrahigh redox reaction rates without any conductive additives when applied as ultrathin layers in an all-solid-state thin-film battery setup, viable for e.g. high-performance power sources in microelectronic devices.

Analysis and Design of High Performance Phase Frequency Detector, Charge Pump and Loop Filter Circuits for Phase Locked Loop in Wireless Applications

2016 ◽  
Vol 4 (2) ◽  
pp. 397
Author(s):  
P.N. Metange ◽  
K. B. Khanchandani
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Loop Filter ◽  
Phase Frequency Detector ◽  
Analysis And Design ◽  
Wireless Applications ◽  
5 Ghz ◽  
Frequency Detector

<p>This paper presents the analysis and design of high performance phase frequency detector, charge pump and loop filter circuits for phase locked loop in wireless applications. The proposed phase frequency detector (PFD) consumes only 8 µW and utilises small area. Also, at 1.8V voltage supply the maximum operation frequency of the conventional PFD is 500 MHz whereas proposed PFD is 5 GHz. Hence, highly suitable for low power, high speed and low jitter applications.  The differential charge pump uses switches using NMOS and the inverter delays for up and down signals do not generate any offset due to its fully symmetric operation. This configuration doubles the range of output voltage compliance compared to single ended charge pump. Differential stage is less sensitive to the leakage current since leakage current behaves as common mode offset with the dual output stages. All the circuits are implemented using cadence 0.18 μm CMOS Process.</p>

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