scholarly journals SnOx Atomic Layer Deposition on Bare Perovskite—An Investigation of Initial Growth Dynamics, Interface Chemistry, and Solar Cell Performance

2021 ◽  
Author(s):  
Adam Hultqvist ◽  
T. Jesper Jacobsson ◽  
Sebastian Svanström ◽  
Marika Edoff ◽  
Ute B. Cappel ◽  
...  
Keyword(s):  
Solar Cell ◽  
Atomic Layer Deposition ◽  
Growth Dynamics ◽  
Atomic Layer ◽  
Cell Performance ◽  
Initial Growth ◽  
Interface Chemistry ◽  
Solar Cell Performance ◽  
Layer Deposition

Optimized CdS quantum dot-sensitized solar cell performance through atomic layer deposition of ultrathin TiO2 coating

RSC Advances ◽  
2012 ◽  
Vol 2 (20) ◽  
pp. 7843 ◽  
Author(s):  
Kehan Yu ◽  
Xiu Lin ◽  
Ganhua Lu ◽  
Zhenhai Wen ◽  
Chris Yuan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Atomic Layer ◽  
Tio2 Coating ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Layer Deposition ◽  
Cds Quantum Dot

Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

2009 ◽  
Vol 1156 ◽  
Author(s):  
Sun Kyung Park ◽  
K. Roodenko ◽  
Yves J. Chabal ◽  
L. Wielunski ◽  
R. Kanjolia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Experimental Conditions ◽  
Metallic Component ◽  
Broadband Absorption ◽  
Lorentz Oscillator ◽  
Layer Deposition ◽  
Drude Term ◽  
Number Of Cycles

AbstractAtomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

scholarly journals Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

2007 ◽  
Vol 996 ◽  
Author(s):  
Justin C. Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Sample Surface ◽  
Interfacial Region ◽  
Initial Growth ◽  
Layer Deposition ◽  
Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

Toward an all-Atomic Layer Deposition (ALD) process for Cu(In,Ga)(S,Se)2 (CIGS)-type solar cell

2019 ◽  
Vol 200 ◽  
pp. 109965 ◽  
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Daniel Lincot ◽  
Frédérique Donsanti
Keyword(s):  
Solar Cell ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

2014 ◽  
Vol 2 (46) ◽  
pp. 9993-10001 ◽  
Author(s):  
Woojin Jeon ◽  
Woongkyu Lee ◽  
Yeon Woo Yoo ◽  
Cheol Hyun An ◽  
Jeong Hwan Han ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Crucial Role ◽  
Growth Stage ◽  
Catalytic Decomposition ◽  
Atomic Layer ◽  
Active Oxygen ◽  
Initial Growth ◽  
Tio2 Films ◽  
Initial Growth Stage ◽  
Layer Deposition

The catalytic decomposition of RuO2 with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO2 at the initial growth stage was drastically increased on RuOx (RuO2/Ru mixture) compared to Ru and RuO2.

scholarly journals Effects of atomic layer deposited thin films on dye sensitized solar cell performance

2012 ◽  
Vol 30 (1) ◽  
pp. 01A157 ◽  
Author(s):  
Jonathan A. Campbell ◽  
Mervyn deBorniol ◽  
Attila J. Mozer ◽  
Peter J. Evans ◽  
Robert P. Burford ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Atomic Layer ◽  
Cell Performance ◽  
Dye Sensitized Solar Cell ◽  
Solar Cell Performance ◽  
Dye Sensitized
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