Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

2009 ◽  
Vol 1156 ◽  
Author(s):  
Sun Kyung Park ◽  
K. Roodenko ◽  
Yves J. Chabal ◽  
L. Wielunski ◽  
R. Kanjolia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Experimental Conditions ◽  
Metallic Component ◽  
Broadband Absorption ◽  
Lorentz Oscillator ◽  
Layer Deposition ◽  
Drude Term ◽  
Number Of Cycles

AbstractAtomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

scholarly journals Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

2007 ◽  
Vol 996 ◽  
Author(s):  
Justin C. Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Sample Surface ◽  
Interfacial Region ◽  
Initial Growth ◽  
Layer Deposition ◽  
Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

scholarly journals Atomic layer deposition for efficient oxygen evolution reaction at Pt/Ir catalyst layers

2020 ◽  
Vol 11 ◽  
pp. 952-959
Author(s):  
Stefanie Schlicht ◽  
Korcan Percin ◽  
Stefanie Kriescher ◽  
André Hofer ◽  
Claudia Weidlich ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metal ◽  
Bimetallic Catalyst ◽  
Precursor Solution ◽  
Atomic Layer ◽  
Dip Coating ◽  
Experimental Conditions ◽  
Catalyst Layers ◽  
Layer Deposition ◽  
Improved Stability

We provide a direct comparison of two distinct methods of Ti felt surface treatment and Pt/Ir electrocatalyst deposition for the positive electrode of regenerative fuel cells and vanadium–air redox flow batteries. Each method is well documented in the literature, and this paper provides a direct comparison under identical experimental conditions of electrochemical measurements and in identical units. In the first method, based on classical engineering, the bimetallic catalyst is deposited by dip-coating in a precursor solution of the salts followed by their thermal decomposition. In the alternative method, more academic in nature, atomic layer deposition (ALD) is applied to the felts after anodization. ALD allows for a controlled coating with ultralow noble-metal loadings in narrow pores. In acidic electrolyte, the ALD approach yields improved mass activity (557 A·g−1 as compared to 80 A·g−1 at 0.39 V overpotential) on the basis of the noble-metal loading, as well as improved stability.

Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

2014 ◽  
Vol 2 (46) ◽  
pp. 9993-10001 ◽  
Author(s):  
Woojin Jeon ◽  
Woongkyu Lee ◽  
Yeon Woo Yoo ◽  
Cheol Hyun An ◽  
Jeong Hwan Han ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Crucial Role ◽  
Growth Stage ◽  
Catalytic Decomposition ◽  
Atomic Layer ◽  
Active Oxygen ◽  
Initial Growth ◽  
Tio2 Films ◽  
Initial Growth Stage ◽  
Layer Deposition

The catalytic decomposition of RuO2 with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO2 at the initial growth stage was drastically increased on RuOx (RuO2/Ru mixture) compared to Ru and RuO2.

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

2015 ◽  
Vol 33 (1) ◽  
pp. 01A111 ◽  
Author(s):  
Hao Van Bui ◽  
Frank B. Wiggers ◽  
Anubha Gupta ◽  
Minh D. Nguyen ◽  
Antonius A. I. Aarnink ◽  
...  
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Layer Deposition

Atomic Layer Deposition of Zirconium Oxide for Fuel Cell Applications

2012 ◽  
Vol 5 (1) ◽  
Author(s):  
C. James ◽  
R. Xu ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Fuel Cells ◽  
Atomic Layer Deposition ◽  
Solid Oxide Fuel Cells ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Electrolyte Layer ◽  
Constant Growth Rate ◽  
Layer Deposition ◽  
Number Of Cycles ◽  
Constant Growth

Solid oxide fuel cells (SOFCs) are an intriguing renewable energy source. Most SOFCs operate at high temperatures, around 1000 °C. One of the problems with them operating at lower temperatures is that it increases the resistance in the electrolyte layer. The focus of this project is to increase the efficiency of the electrolyte layer at the lower temperatures by decreasing the thickness of the electrolyte layer, in order to decrease the ionic resistance. Atomic layer deposition (ALD) was used to deposit zirconium oxide, which is one of the promising components of electrolytes in small length scale fuel cells; the zirconium precursor was Tris(dimethylamino)cyclopentadienylZirconium (ZyALD) and the oxidant was 0.1 % O3 in O2. Spectroscopic ellipsometry was used to measure the thickness of the samples was. This paper also describes how ALD was used to vary the thickness from 32 Å to 135 Å. Our results showed that there was a constant growth rate of 0.87 ± 0.04 Å/cycle, which can be used to control the film thickness. The error was calculated by taking the standard deviation of the growth rates for a varied number of cycles that were run.

Selective Atomic Layer Deposition (SALD) of Titanium Dioxide on Silicon and Copper Patterned Substrates

2010 ◽  
Vol 4 (1) ◽  
Author(s):  
K. Overhage ◽  
Q. Tao ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Native Oxide ◽  
Initial Growth ◽  
Patterned Substrates ◽  
Selective Deposition ◽  
Layer Deposition ◽  
Potential Applications ◽  
Microelectronics Industry ◽  
Future Work

Atomic Layer Deposition (ALD) of TiO2 has potential applications in the microelectronics industry for purposes such as formation of the copper barrier layer. In this paper, TiO2 deposition on silicon and copper substrates is studied, with a focus on the initial growth and nucleation period on different substrates. Silicon with native oxide about 1.5 nm-thick, silicon with reduced oxide <1 nm-thick, and silicon/copper patterned substrates with native oxide are tested for TiO2 deposition. The temperature-independent window on silicon is studied, and findings are used encourage selective deposition on the silicon portions of a copper-patterned silicon substrate. Selective ALD is found to be possible on silicon portions by taking advantage of the 15-20 cycle TiO2 nucleation period on copper, allowing a film approximately 2.5 nm-thick to grow on silicon while less than two monolayers grow on copper. Findings can be used in future work to further promote selective deposition of TiO2.

In-situ analysis on the initial growth of ultra-thin ruthenium films with atomic layer deposition

2013 ◽  
Vol 107 ◽  
pp. 151-155 ◽  
Author(s):  
Marion Geidel ◽  
Marcel Junige ◽  
Matthias Albert ◽  
Johann W. Bartha
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
In Situ Analysis ◽  
Initial Growth ◽  
Layer Deposition
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