Effect of pentacene thickness on organic thin film transistors: Role of pentacene/insulator interface

2007 ◽  
Author(s):  
Dipti Gupta ◽  
M. Katiyar ◽  
Deepak
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Insulator Interface

scholarly journals Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance

2020 ◽  
Vol 12 (25) ◽  
pp. 28416-28425 ◽  
Author(s):  
Adara Babuji ◽  
Inés Temiño ◽  
Ana Pérez-Rodríguez ◽  
Olga Solomeshch ◽  
Nir Tessler ◽  
...  
Keyword(s):  
Thin Film ◽  
Structural Stability ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Beneficial Role ◽  
Improved Performance

Printed dual-gate organic thin film transistors and PMOS inverters on flexible substrates: Role of top gate electrode

2021 ◽  
Author(s):  
Subhash Singh ◽  
Hiroyuki Matsui ◽  
Shizuo Tokito
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polyethylene Naphthalate ◽  
Gate Electrode ◽  
Noise Margin ◽  
Dual Gate

Abstract We report printed single and dual-gate organic thin film transistors (OTFTs) and PMOS inverters fabricated on 125 µm-thick flexible polyethylene naphthalate (PEN) substrate. All the electrodes (gate, source, and drain) are inkjet-printed, while the parylene dielectric is formed by chemical vapor deposition. A dispenser system is used to print the active channel material using a blend of 2,7-dihexyl-dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (DTBDT-C6) and polystyrene (PS) in tetralin solvent, which gives highest mobility of 0.43 cm2/Vs. Dual-gate OTFTs are characterized by keeping the other gate electrode either in grounded or floating state. Floating gate electrode devices shows higher apparent mobility and current ratio due to additional capacitance of the parylene dielectric. PMOS inverter circuits are characterized in terms of gain, trip point and noise margin values calculated from the voltage transfer characteristics (VTC). Applied top gate voltage on the load OTFT control the conductivity or threshold voltage (VTh) of the bottom TFT and shift the trip point towards the middle of the VTC curve, and hence increase the noise margin.

scholarly journals Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
State Organization ◽  
P Type

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.

On the crucial role of the insulator-semiconductor interface in organic thin-film transistors

2006 ◽  
Author(s):  
Gilles Horowitz ◽  
Mohammad Mottaghi ◽  
Philippe Lang ◽  
Fernand Rodriguez ◽  
Abdrerrahim Yassar ◽  
...  
Keyword(s):  
Thin Film ◽  
Crucial Role ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Semiconductor Interface

Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 5907-5914 ◽  
Author(s):  
Min Hong Park ◽  
Junhyung Kim ◽  
Seung Chul Lee ◽  
Se Youn Cho ◽  
Na Rae Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Secondary Structure ◽  
Silk Fibroin ◽  
Thin Film Transistors ◽  
Critical Role ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Correlation between silk fibroin (SF) secondary structure and dielectric performances of organic thin-film transistors (OTFTs) was investigated using various SF films.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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