SERS Selective Enhancement on Monolayer MoS2 Enabled by a Pressure-Induced Shift from Resonance to Charge Transfer

The singular charge-transfer SERS spectra of symmetric and non-symmetric benzene-like compounds and their selective enhancement under electric field are investigated.

Download Full-text

Surface-enhanced Raman scattering of 2,3-dimethylpyrazine adsorbed on silver electrode: selective enhancement explained through the charge transfer mechanism

Vibrational Spectroscopy ◽

10.1016/j.vibspec.2003.11.012 ◽

2004 ◽

Vol 35 (1-2) ◽

pp. 39-44 ◽

Cited By ~ 10

Author(s):

J.F Arenas ◽

S.P Centeno ◽

I López-Tocón ◽

J.C Otero

Keyword(s):

Charge Transfer ◽

Raman Scattering ◽

Surface Enhanced Raman Scattering ◽

Silver Electrode ◽

Transfer Mechanism ◽

Charge Transfer Mechanism ◽

Surface Enhanced ◽

Surface Enhanced Raman ◽

Enhanced Raman Scattering ◽

Selective Enhancement

Download Full-text

Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants

Communications Physics ◽

10.1038/s42005-019-0212-y ◽

2019 ◽

Vol 2 (1) ◽

Cited By ~ 7

Author(s):

Soohyung Park ◽

Thorsten Schultz ◽

Xiaomin Xu ◽

Berthold Wegner ◽

Areej Aljarb ◽

...

Keyword(s):

Charge Transfer ◽

Photoelectron Spectroscopy ◽

Electronic Devices ◽

Electronic Coupling ◽

Transition Metal Dichalcogenide ◽

Two Dimensional ◽

Monolayer Mos2 ◽

X Ray ◽

Molecular Electron ◽

Transfer Mechanisms

Abstract Tuning the Fermi level (EF) in two-dimensional transition metal dichalcogenide (TMDC) semiconductors is crucial for optimizing their application in (opto-)electronic devices. Doping by molecular electron acceptors and donors has been suggested as a promising method to achieve EF-adjustment. Here, we demonstrate that the charge transfer (CT) mechanism between TMDC and molecular dopant depends critically on the electrical nature of the substrate as well as its electronic coupling with the TMDC. Using angle-resolved ultraviolet and X-ray photoelectron spectroscopy, we reveal three fundamentally different, substrate-dependent CT mechanisms between the molecular electron acceptor 1,3,4,5,7,8-hexafluoro-tetracyano-naphthoquinodimethane (F6TCNNQ) and a MoS2 monolayer. Our results demonstrate that any substrate that acts as charge reservoir for dopant molecules can prohibit factual doping of a TMDC monolayer. On the other hand, the three different CT mechanisms can be exploited for the design of advanced heterostructures, exhibiting tailored electronic properties in (opto-)electronic devices based on two-dimensional semiconductors.

Download Full-text

Chemisorption of metallic radionuclides on a monolayer MoS2 nanosheet

Nanoscale Advances ◽

10.1039/c8na00057c ◽

2019 ◽

Vol 1 (1) ◽

pp. 114-121 ◽

Cited By ~ 4

Author(s):

Zheng Zhang ◽

Qiang Zhao ◽

Mei Huang ◽

Xiaodong Zhang ◽

Xiaoping Ouyang

Keyword(s):

Charge Transfer ◽

Monolayer Mos2 ◽

Mos2 Nanosheet

Due to the charge transfer between metalic radionuclides and MoS2 nanosheet, the metalic radionuclides can be chemisorbed on the monolayer MoS2 nanosheet stably.

Download Full-text

Improvement of the arsine adsorption by doping on monolayer MoS2

Functional Materials Letters ◽

10.1142/s1793604719500589 ◽

2019 ◽

Vol 12 (04) ◽

pp. 1950058 ◽

Cited By ~ 1

Author(s):

Gongjie Xu ◽

Gongming Song ◽

Yaole Wang

Keyword(s):

Charge Transfer ◽

Adsorption Energy ◽

First Principles ◽

Effective Charge ◽

Type System ◽

First Principles Calculation ◽

Monolayer Mos2 ◽

Text Type ◽

Impurity Atoms ◽

Effective Charge Transfer

The improvement of the arsine adsorption on monolayer MoS2 by doping has been investigated by first-principles calculation. The impurity atoms Si, P, and Cl, have been introduced to substitute S atoms to form an [Formula: see text]- or [Formula: see text]-type system. The electronic properties of MoS2 with dopants P and Cl are insensitive to the adsorption of AsH3. The Si-MoS2 with adsorbed AsH3 configuration has the largest adsorption energy, the lowest adsorbed height, and the most effective charge transfer. It is indicated that the properties of MoS2 can be improved by doping for detecting AsH3 molecules.

Download Full-text

Unleashing ultra-fast sodium ion storage mechanisms in interface-engineered monolayer MoS2/C interoverlapped superstructure with robust charge transfer networks

Journal of Materials Chemistry A ◽

10.1039/d0ta04916f ◽

2020 ◽

Vol 8 (30) ◽

pp. 15002-15011 ◽

Cited By ~ 1

Author(s):

Lili Wang ◽

Haitao Zhang ◽

Yanlei Wang ◽

Cheng Qian ◽

Qiang Dong ◽

...

Keyword(s):

Charge Transfer ◽

Sodium Ion ◽

Monolayer Mos2 ◽

Ion Storage ◽

Sodium Ion Storage ◽

Splitting Process

A new MoS2/C nanoarchitecture with robust charge transfer networks fabricated via a “self-splitting” process of bagasse exhibits ultra-fast/stable Na-ion storage.

Download Full-text

Study of charge transfer in FeTi

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075270 ◽

1983 ◽

Vol 41 ◽

pp. 296-297

Author(s):

J. Taft∅

Keyword(s):

Charge Transfer ◽

Charge Distribution ◽

Electron Scattering ◽

Periodic System ◽

Electron Distribution ◽

Scattering Amplitude ◽

Transition Elements ◽

Hartree Fock ◽

Cscl Structure ◽

The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

Download Full-text

Direct imaging of charge transfer

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100165860 ◽

1996 ◽

Vol 54 ◽

pp. 680-681

Author(s):

Yimei Zhu ◽

J. Tafto

Keyword(s):

Charge Transfer ◽

Electron Diffraction ◽

Scattering Amplitude ◽

High Temperature Superconductors ◽

Charge Carriers ◽

Image Charge ◽

Net Charge ◽

Long Time ◽

Electron Holes ◽

First Time

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.

Download Full-text