Revisiting the Determination of the Valence Band Maximum and Defect Formation in Halide Perovskites for Solar Cells: Insights from Highly Sensitive Near–UV Photoemission Spectroscopy

2021 ◽  
Author(s):  
Dorothee Menzel ◽  
Alvaro Tejada ◽  
Amran Al-Ashouri ◽  
Igal Levine ◽  
Jorge Andres Guerra ◽  
...  
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Defect Formation ◽  
Valence Band Maximum ◽  
Photoemission Spectroscopy ◽  
Band Maximum ◽  
Highly Sensitive ◽  
Halide Perovskites

scholarly journals An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Surface Passivation ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Valence Band Maximum ◽  
Ambient Conditions ◽  
Band Maximum ◽  
Point Tracking ◽  
Power Point

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

Zn(O,OH) layers in chalcopyrite thin-film solar cells: Valence-band maximum versus composition

2005 ◽  
Vol 98 (5) ◽  
pp. 053702 ◽  
Author(s):  
M. Bär ◽  
J. Reichardt ◽  
A. Grimm ◽  
I. Kötschau ◽  
I. Lauermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Thin Film Solar Cells ◽  
Band Maximum

scholarly journals Valence Level Character in a Mixed Perovskite Material and Determination of the Valence Band Maximum from Photoelectron Spectroscopy: Variation with Photon Energy

2017 ◽  
Vol 121 (48) ◽  
pp. 26655-26666 ◽  
Author(s):  
Bertrand Philippe ◽  
T. Jesper Jacobsson ◽  
Juan-Pablo Correa-Baena ◽  
Naresh K. Jena ◽  
Amitava Banerjee ◽  
...  
Keyword(s):  
Valence Band ◽  
Photon Energy ◽  
Photoelectron Spectroscopy ◽  
Valence Band Maximum ◽  
Band Maximum ◽  
Perovskite Material ◽  
Valence Level

Photoemission Study of the α-Sn/Cdte(110) Interface Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
Ming Tang ◽  
David W. Niles ◽  
Isaac Hernández-Calderón ◽  
Hartmut Hóchst
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Photoemission Spectroscopy ◽  
Mbe Growth ◽  
Band Maximum ◽  
Interface Growth ◽  
Interfacial Growth ◽  
Photoemission Study

ABSTRACTAngular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

EXAFs and XPS studies of Hg1−xZnxTe: Determination of local atomic structure and valence band maximum

1989 ◽  
Vol 50 (9) ◽  
pp. 975-979 ◽  
Author(s):  
A. Marbeuf ◽  
D. Ballutaud ◽  
R. Triboulet ◽  
H. Dexpert ◽  
P. Lagarde ◽  
...  
Keyword(s):  
Valence Band ◽  
Atomic Structure ◽  
Valence Band Maximum ◽  
Local Atomic Structure ◽  
Band Maximum

scholarly journals Determination of the valence band edge of Fe oxide nanoparticles dispersed in aqueous solution through resonant photoelectron spectroscopy from a liquid microjet

2021 ◽  
Author(s):  
Giorgia Olivieri ◽  
Gregor Kladnik ◽  
Dean Cvetko ◽  
Matthew A. Brown
Keyword(s):  
Aqueous Solution ◽  
Electronic Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Edge ◽  
Photoemission Spectroscopy ◽  
Oxide Nanoparticles ◽  
Valence Band Edge ◽  
Resonant Photoemission

The electronic structure of hydrated nanoparticles can be unveiled by coupling a liquid microjet with a resonant photoemission spectroscopy.

scholarly journals Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Lattice Distortion ◽  
Grazing Incidence ◽  
Valence Band Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Highly Sensitive ◽  
Doping Ratio

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.

Examination of the Silicon – Silicon Carbide Interface by Ultraviolet Photoemission Spectroscopy

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Koitzscht ◽  
M. O'Brient ◽  
D. Johri ◽  
A. Stoltzt ◽  
R. Nemanicht
Keyword(s):  
Silicon Carbide ◽  
Valence Band ◽  
High Vacuum ◽  
Valence Band Maximum ◽  
Integrated System ◽  
Ultra High Vacuum ◽  
Photoemission Spectroscopy ◽  
Ambient Atmosphere ◽  
Silicon Silicon ◽  
State Feature

ABSTRACTPhotoemission spectroscopy (UPS) was used to investigate the interface properties of deposited silicon on hexagonal 6H-silicon carbide. SiC cleaned in Si flux from a molecular beam epitaxy (MBE) system was used for this study. All processes were accomplished in an ultra high vacuum integrated system that allowed all cleaning, deposition, and analysis to be completed without exposure to ambient atmosphere. Thicknesses of sub- to multiple monolayers were deposited and the valence band structure was investigated. The valence band maximum (VBM) was observed to shift for Si depositions greater than 1 monolayer. The VBM offset was determined to be 2.4eV for a layer of 60Å Si on SiC. Furthermore, the prominent surface state feature of the silicon carbide (0001)si surface is reduced after Si deposition. The results are discussed in terms of the electronic properties of the Si – SiC interface.

scholarly journals Synthesis of ZnO doped high valence S element and study of photogenerated charges properties

RSC Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 4422-4427 ◽  
Author(s):  
Lijing Zhang ◽  
Xiufang Zhu ◽  
Zhihui Wang ◽  
Shan Yun ◽  
Tan Guo ◽  
...  
Keyword(s):  
Uniform Distribution ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum

The uniform distribution of S dopants elevated the valence band maximum by mixing S 3p with the upper valence band states of ZnO. The valence band maxima of S–ZnO was 0.37 eV higher than that of ZnO.

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