ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.
Thin-film solar cells constituted of abundant elements are the key to ensure mass production, reduce energy costs and meet energy demands. Kesterite, is a cost-effective light absorber, however showed low...
Correction for ‘Solution-processed Cu2XSnS4 (X = Fe, Co, Ni) photo-electrochemical and thin film solar cells on vertically grown ZnO nanorod arrays’ by Anima Ghosh et al., RSC Adv., 2016, 6, 115204–115212.
Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells