Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

2019 ◽  
Vol 11 (6) ◽  
pp. 6336-6343 ◽  
Author(s):  
Chao-Hui Yeh ◽  
Po-Yuan Teng ◽  
Yu-Chiao Chiu ◽  
Wen-Ting Hsiao ◽  
Shawn S. H. Hsu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Free Graphene ◽  
Cmos Compatible

scholarly journals A general approach for high yield fabrication of CMOS-compatible all-semiconducting carbon nanotube field effect transistors

2012 ◽  
Vol 23 (12) ◽  
pp. 125201 ◽  
Author(s):  
Muhammad R Islam ◽  
Kristy J Kormondy ◽  
Eliot Silbar ◽  
Saiful I Khondaker
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Yield ◽  
Cmos Compatible

Enhancement of protein detection performance in field-effect transistors with polymer residue-free graphene channel

Carbon ◽  
2013 ◽  
Vol 62 ◽  
pp. 312-321 ◽  
Author(s):  
Jin Heak Jung ◽  
Il Yung Sohn ◽  
Duck Jin Kim ◽  
Bo Yeong Kim ◽  
Mi Jang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Protein Detection ◽  
Detection Performance ◽  
Free Graphene

CMOS-Compatible Silicon Nanowire Field-Effect Transistors for Ultrasensitive and Label-Free MicroRNAs Sensing

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 2022-2028 ◽  
Author(s):  
Na Lu ◽  
Anran Gao ◽  
Pengfei Dai ◽  
Shiping Song ◽  
Chunhai Fan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Cmos Compatible

CMOS-Compatible Mesa-Etched Ultrathin Epitaxial Channel Tunnel Field-Effect Transistors

2013 ◽  
Author(s):  
Y. Morita ◽  
T. Mori ◽  
S. Migita ◽  
W. Mizubayashi ◽  
A. Tanabe ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Cmos Compatible

scholarly journals Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

Sensors ◽  
2021 ◽  
Vol 21 (21) ◽  
pp. 7262
Author(s):  
Yamujin Jang ◽  
Young-Min Seo ◽  
Hyeon-Sik Jang ◽  
Keun Heo ◽  
Dongmok Whang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Organic Contamination ◽  
Au Film ◽  
Graphene Field Effect Transistor ◽  
Free Graphene ◽  
Graphene Transfer ◽  
Transfer Method ◽  
Grown Graphene

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.

Inverted process for graphene integrated circuits fabrication

Nanoscale ◽  
2014 ◽  
Vol 6 (11) ◽  
pp. 5826-5830 ◽  
Author(s):  
Hongming Lv ◽  
Huaqiang Wu ◽  
Jinbiao Liu ◽  
Can Huang ◽  
Junfeng Li ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Routing Technology ◽  
Cmos Compatible

CMOS compatible 200 mm two-layer-routing technology is employed to fabricate graphene field-effect transistors and monolithic graphene ICs.

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