Improved performance and stability of field-effect transistors with polymeric residue-free graphene channel transferred by gold layer

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

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Improved Performance of Solution-Processed n-Type Organic Field-Effect Transistors by Regulating the Intermolecular Interactions and Crystalline Domains on Macroscopic Scale

Chemistry of Materials ◽

10.1021/cm501780p ◽

2014 ◽

Vol 26 (13) ◽

pp. 4030-4037 ◽

Cited By ~ 33

Author(s):

Suresh Vasimalla ◽

Satyaprasad P. Senanayak ◽

Meenakshi Sharma ◽

K. S. Narayan ◽

Parameswar Krishnan Iyer

Keyword(s):

Intermolecular Interactions ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Macroscopic Scale ◽

Solution Processed ◽

Improved Performance ◽

Crystalline Domains

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Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110312 ◽

2021 ◽

pp. 110312

Author(s):

Khalil Tamersit ◽

Zeinab Ramezani ◽

I.S. Amiri

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Band To Band Tunneling ◽

Improved Performance

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Improving Stability of Pentacene Field-Effect Transistors with Post-Annealing

MRS Proceedings ◽

10.1557/proc-1029-f09-12 ◽

2007 ◽

Vol 1029 ◽

Cited By ~ 1

Author(s):

Shun-Wei Liu ◽

Jia-Cing Huang ◽

Chih-Chien Lee ◽

Chin-Ti Lee ◽

Juen-Kai Wang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Annealing Treatment ◽

Drain Current ◽

Semiconductor Layer ◽

Post Annealing ◽

Source Voltage ◽

Effect Transistor ◽

Improved Performance ◽

Contact Field

AbstractIn this report, we demonstrate that the performance and stability of pentacene top-contact field-effect transistor can be greatly improved with post-annealing treatment. After post-annealing at 90°C for 12 hours in nitrogen environment, the hole field-effect mobility of 0.3 cm2/Vs and the on/off current ratio of 107 were achieved, demonstrating 100% improvement in performance after the post-annealing treatment. The decay rate of drain current at constant gate and drain-source voltage was found to be decreased by more than 40%. The improved performance is attributed to the elimination of trapped holes and lattice defects in the organic semiconductor layer due to the post-annealing process.

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