Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors

2018 ◽  
Vol 10 (51) ◽  
pp. 44554-44560 ◽  
Author(s):  
Tae Soo Jung ◽  
Heesoo Lee ◽  
Hee Jun Kim ◽  
Jin Hyeok Lee ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Dual Functional

Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2012 ◽  
Vol 51 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Zinc Tin Oxide

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 590 ◽  
pp. 229-233
Author(s):  
Sheng Po Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Subthreshold Slope ◽  
Partial Pressures ◽  
Zinc Tin Oxide ◽  
Effect Of Oxygen

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin–oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4 %, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec−1were obtained.

P-Doped SiO2 Proton Conducting Films for Low Voltage Thin Film Transistors

2013 ◽  
Vol 773 ◽  
pp. 660-663
Author(s):  
Li Qiang Guo ◽  
Zhao Jun Guo ◽  
Yuan Yuan Yang ◽  
Ju Mei Zhou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Low Voltage ◽  
Proton Conduction ◽  
Proton Conductors ◽  
Oxide Thin Film ◽  
Shadow Mask ◽  
Electrical Characteristics ◽  
Capacitance Density

P-doped SiO2 were prepared by PECVD and one metal shadow mask self-assembled method was used for fabricating oxide thin film transistors gated by such proton conductors. Proton conduction of these films was demonstrated and electrical characteristics of oxide thin film transistors gated by such proton conductors were discussed. Due to excellent proton conduction and big capacitance density, oxide thin film transistors gated by such proton conductors have obtained excellent performances with mobility of 48.39 cm2/Vs, threshold voltage of-0.36 V, subthreshold swing of 0.13 V/decade, Ion/off ratio of 3.2×106 with the relative humidity of 30% at the room temperature.

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