Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

2012 ◽  
Vol 12 (6) ◽  
pp. 3209-3214 ◽  
Author(s):  
Shunta Harada ◽  
Alexander ◽  
Kazuaki Seki ◽  
Yuji Yamamoto ◽  
Can Zhu ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Solution Growth ◽  
Two Dimensional ◽  
Polytype Transformation

Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

1999 ◽  
Vol 572 ◽  
Author(s):  
W. L. Samey ◽  
L. Salamanca-Riba ◽  
P. Zhou ◽  
M. G. Spencer ◽  
C. Taylor ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
High Quality ◽  
Flow Rates ◽  
Si Substrates ◽  
Cvd Growth ◽  
Polytype Transformation ◽  
Si Films ◽  
Sic Film ◽  
Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth

2010 ◽  
Vol 645-648 ◽  
pp. 363-366 ◽  
Author(s):  
Kazuaki Seki ◽  
Kai Morimoto ◽  
Toru Ujihara ◽  
Tomoharu Tokunaga ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Strain Energy ◽  
Grown Crystal ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Stacking Fault ◽  
The Other ◽  
Solution Growth ◽  
Mismatch Strain ◽  
Polytype Transformation ◽  
Lattice Mismatch Strain

6H-SiC hetero-epitaxially grown on a (111) 3C-SiC was observed with TEM. High-density stacking faults were formed around the hetero-interface, and the density of stacking faults decreased with increasing distance from interface. On the other hand, when 3C-SiC was homo-epitaxially grown on a 3C-SiC, any stacking faults did not exist at the interface between the grown crystal and the seed crystal. Thus, the stacking faults formation started from the 6H/3C hetero-interface. Considering the lattice-mismatch strain between 3C-SiC and 6H-SiC, the strain energy is equivalent to the stacking fault energy of 6H-SiC. This similarity suggests that the stacking faults formation could be caused by the relaxation of the lattice-mismatch strain.

Polytype transformation path on 4H-SiC during top-seeded solution growth

2011 ◽  
Author(s):  
S. Harada ◽  
Alexander ◽  
K. Seki ◽  
Y. Yamamoto ◽  
T. Ujihara
Keyword(s):  
Solution Growth ◽  
Transformation Path ◽  
Polytype Transformation ◽  
Top Seeded Solution Growth

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers

2009 ◽  
Vol 615-617 ◽  
pp. 37-40 ◽  
Author(s):  
Ryo Tanaka ◽  
Kazuaki Seki ◽  
Toru Ujihara ◽  
Yoshikazu Takeda
Keyword(s):  
Grown Crystal ◽  
Stacking Faults ◽  
Seed Crystal ◽  
Solution Growth ◽  
High Temperature Solution ◽  
Si Substrate ◽  
Free Standing ◽  
Cvd Method ◽  
Temperature Solution ◽  
Cvd Growth

Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed crystal was prepared by a CVD method on the undulated Si substrate. 3C-SiC stably grew on the (001) seed crystal. However, dark stripes from the seed crystal to the grown crystal along {111} planes were clearly observed. The stripes were due to the high-density stacking faults extended from the stacking faults in the 3C-SiC epilayer that were induced during the CVD growth on Si substrate.

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation

2017 ◽  
Vol 897 ◽  
pp. 24-27 ◽  
Author(s):  
Kenta Murayama ◽  
Tsukasa Hori ◽  
S. Harada ◽  
S. Xiao ◽  
M. Tagawa ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Growth Temperature ◽  
Thick Layer ◽  
High Growth ◽  
Solution Growth ◽  
Threading Dislocation ◽  
Low Density ◽  
Screw Dislocations ◽  
Threading Dislocation Density ◽  
Polytype Transformation

In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transformation, is frequently induced because a density of threading screw dislocations acting as a source of spiral step decreases and wide terraces form by step bunching as growth proceeds. Therefore, it is very difficult to stabilize the polytype of crystals grown with extremely low density of threading screw dislocations. In this study, we tried to overcome these problems by using specially designed seed crystal and optimizing growth temperature and temperature distribution. We successfully grew thick low-threading-dislocation density SiC crystal without polytype transformation under the condition of high growth temperature and homogeneous temperature distribution.

Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals

2016 ◽  
Vol 858 ◽  
pp. 73-76 ◽  
Author(s):  
Komomo Tani ◽  
Tatsuo Fujimoto ◽  
Kazuhito Kamei ◽  
Kazuhiko Kusunoki ◽  
Kazuaki Seki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Sharp Increase ◽  
Grown Crystal ◽  
Stacking Faults ◽  
Dislocation Network ◽  
Two Dimensional ◽  
Partial Dislocations ◽  
Plane Distribution ◽  
Edge Dislocations ◽  
Crystal Interface

Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

scholarly journals Observation of MEL stacking faults in two-dimensional MFI zeolite nanosheets

2016 ◽  
Vol 22 (S3) ◽  
pp. 1634-1635
Author(s):  
Prashant Kumar ◽  
Han Zhang ◽  
Neel Rangnekar ◽  
Michael Tsapatsis ◽  
K. Andre Mkhoyan
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
Mfi Zeolite
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