Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

1999 ◽  
Vol 572 ◽  
Author(s):  
W. L. Samey ◽  
L. Salamanca-Riba ◽  
P. Zhou ◽  
M. G. Spencer ◽  
C. Taylor ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
High Quality ◽  
Flow Rates ◽  
Si Substrates ◽  
Cvd Growth ◽  
Polytype Transformation ◽  
Si Films ◽  
Sic Film ◽  
Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

1997 ◽  
Vol 472 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Huang-Chung Cheng ◽  
Wen-Horng Lee ◽  
Chiapyng Lee ◽  
Tri-Rung Yew
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Thin Film Transistor ◽  
Impurity Scattering ◽  
Gas Analyzer ◽  
Flow Rates ◽  
Sic Film ◽  
Dopant Source ◽  
Sic Films

ABSTRACTLow-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell.… etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 seem, respectively.

Structural Characterization of Heteroepitaxial 3C-SiC

2012 ◽  
Vol 711 ◽  
pp. 27-30 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Film Structure ◽  
Material Structure ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Crystallographic Defects ◽  
Sic Film ◽  
Sic Films

In this work, we focus our attention on the characterization of 3C-SiC films, grown within a CVD reactor, on Si substrates. It will be shown how the growth procedures influence the SiC film structure and quality with the growth rate used during the growth used as example. Evaluation of crystal structure has been conducted by X-Ray Diffraction (XRD), Raman microscopy and Transmission Electron Microscopy (TEM). Overall film quality increases if films are grown under low growth rate conditions, thanks also to an important reduction in the density of micro-twins. The trend of the full widths at half maximum (FWHMs) of SiC rocking curves, considered good ‘quality indicator’ as their broadenings are affected by crystallographic defects, as a function of 3C-SiC thickness shows a saturated regime for very thick films, due to the saturation of stacking fault density after 50 μm of growth. This work wants to suggest a reasonable path for the characterization of the material structure that can be useful, anywhere and in any time, to assess if the morphology and microstructure of our films are satisfactory and to drive towards the desired improvement.

High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates

2010 ◽  
Vol 518 (6) ◽  
pp. S165-S169 ◽  
Author(s):  
A. Severino ◽  
C. Bongiorno ◽  
N. Piluso ◽  
M. Italia ◽  
M. Camarda ◽  
...  
Keyword(s):  
High Quality ◽  
Si Substrates ◽  
Sic Films

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

2012 ◽  
Vol 12 (6) ◽  
pp. 3209-3214 ◽  
Author(s):  
Shunta Harada ◽  
Alexander ◽  
Kazuaki Seki ◽  
Yuji Yamamoto ◽  
Can Zhu ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Solution Growth ◽  
Two Dimensional ◽  
Polytype Transformation

Fabrication of Micro-Cantilevers Using RF Magnetron Sputtered Silicon Carbide Films

2011 ◽  
Vol 254 ◽  
pp. 163-166
Author(s):  
Atul Vir Singh ◽  
Sudhir Chandra ◽  
Gouranga Bose
Keyword(s):  
Silicon Carbide ◽  
Prolonged Exposure ◽  
Low Cost ◽  
Rf Magnetron Sputtering ◽  
Anisotropic Etching ◽  
Cantilever Beams ◽  
Si Substrates ◽  
Micro Cantilever ◽  
Sic Film ◽  
Sic Films

In the present work, silicon carbide (SiC) films were deposited by RF magnetron sputtering process on Si (100) substrates for micro-cantilever fabrication. The films were deposited without external substrate heating using a ceramic SiC target at 10 mTorr sputtering pressure, 200 W power and 50 mm target-to-substrate spacing. X-ray diffraction pattern shows that the films were amorphous in nature. In order to investigate the chemical inertness, the SiC coated Si substrates were dipped in buffered HF (BHF) at room temperature and in 40% KOH solution at 80 °C for varying length of time. Atomic force microscope was used to investigate surface roughness and morphology of the films before and after chemical processing. Micro-cantilever beams of the SiC film were fabricated by a single mask process. The SiC film was patterned using reactive ion etching (RIE) in SF6-O2 plasma. Thermally evaporated Al film was used as a mask during RIE process. This process also resulted in the formation of convex corners which were exploited for anisotropic etching of Si under the SiC film. The SiC cantilever beams were released by anisotropic etching of Si in KOH at 80 °C without using additional masking material. Scanning electron microscopy was used to observe the fabricated SiC micro-cantilever beams. The morphology of the SiC film after prolonged exposure to KOH was observed to be similar to that of the as-deposited film. The RF magnetron sputtered SiC films were found to be highly inert in KOH and BHF solutions. Due to difficulty in micromachining of bulk SiC material and its high cost, the RF sputtered SiC films on Si can provide a low cost structural material in MEMS.

Space-confined CVD growth of 2D-MoS2 crystals with tunable dimensionality via adjusting growth conditions

CrystEngComm ◽  
2021 ◽  
Author(s):  
Fei Chen ◽  
Xia Jiang ◽  
Jiaqi Shao ◽  
Bin Lu ◽  
Li Fu ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Yield ◽  
Two Dimensional ◽  
Next Generation ◽  
High Quality ◽  
Large Size ◽  
Cvd Growth

Two-dimensional MoS2 is demonstrated to be a prospective material for next-generation ultrathin nanoelectronics and optoelectronics. However, it remains an enormous challenge to fabricate high-yield, large-size, and high-quality monolayered MoS2 crystals....

Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si Substrates

2012 ◽  
Vol 717-720 ◽  
pp. 185-188
Author(s):  
Brian Wagner ◽  
James D. Oliver ◽  
Narsingh B. Singh ◽  
M. King ◽  
S. McLaughlin ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Microstructural Analysis ◽  
Crystal Quality ◽  
Surface Microstructure ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Designed Experiment ◽  
Cvd Growth ◽  
Sic Films ◽  
Low Temperature Epitaxy

The CVD growth of SiC thin films using hexamethyldisilane (HMDS) as the singular precursor on Si substrates with an AlN nucleation layer was explored in this study. A statistically designed experiment was used to conclude that growth temperature has the largest impact on crystal quality and surface microstructure. In addition to crystal quality, wafer bow was studied. Crystal quality and growth rate are loosely correlated to wafer bow in our study. SEM surface microstructural analysis of the SiC films shows a changing microstructure with growth temperature consistent changes in measured crystal quality. TEM studies reveal that the films are the 3C polytype having a high density of planar faults.

scholarly journals Color Chart for Thin SiC Films Grown on Si Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 279-282 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Glenn Walker ◽  
Ji Sheng Han ◽  
Alan Iacopi ◽  
...  
Keyword(s):  
Incident Light ◽  
Optical Microscope ◽  
Surface Color ◽  
Color Chart ◽  
The Real ◽  
Si Substrates ◽  
Color Saturation ◽  
Fluorescent Lighting ◽  
Sic Film ◽  
Sic Films

In this paper, a color chart was defined for thin SiC films grown on Si substrates. For SiC films thinner than 500 nm, the surface color was observed using an optical microscope with the incident light normally illuminated on the SiC surface. An image of the surface was then taken by a camera attached to the optical microscope and the surface color was defined using RGB code. For SiC films thicker than 500 nm, the image taken by the camera did not represent the real color of the SiC film. Therefore, for these thicker SiC films, the colors were defined by observing the films under daylight fluorescent lighting by naked eyes. It was found that the colors of the SiC films vary periodically as the thickness increased. No color saturation was found for SiC films up to 1185 nm thick.

CVD Growth of SiC on Ultrathin SOi2: A Step Towards Development of a Compliant Substrate for SiC and III-V Compounds

1995 ◽  
Vol 410 ◽  
Author(s):  
Freydoon Namavar ◽  
P. Colter ◽  
A. Cremins-Costa ◽  
E. Gagnon ◽  
D. Perry
Keyword(s):  
Epitaxial Growth ◽  
Growth Conditions ◽  
Auger Spectroscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Compliant Substrate ◽  
Si Substrates ◽  
Initial Stage ◽  
Cvd Growth ◽  
Si Films

ABSTRACTThis paper addresses the initial stage of epitaxial growth of SiC on thin (about 300A) and thick (2000Å) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

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