High energy resolution x-ray photoelectron spectroscopy studies of tetracyanoquinodimethane charge transfer complexes with copper, nickel, and lithium

1989 ◽  
Vol 1 (1) ◽  
pp. 72-78 ◽  
Author(s):  
John M. Lindquist ◽  
John C. Hemminger
Keyword(s):  
Charge Transfer ◽  
Energy Resolution ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
High Energy Resolution ◽  
Charge Transfer Complexes ◽  
X Ray ◽  
Copper Nickel ◽  
Spectroscopy Studies

In situ observation of charge transfer and crystal field formation via high energy resolution X-ray spectroscopy during temperature programmed oxidation

2020 ◽  
Vol 22 (26) ◽  
pp. 14731-14735
Author(s):  
Anna Wach ◽  
Wojciech Błachucki ◽  
Joanna Czapla-Masztafiak ◽  
Daniel Luis Abreu Fernandes ◽  
Dariusz Banaś ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Energy Resolution ◽  
High Energy ◽  
High Energy Resolution ◽  
In Situ Observation ◽  
X Ray ◽  
Temperature Programmed Oxidation ◽  
Temperature Programmed ◽  
Charge Transfer Dynamics ◽  
Field Formation

In this paper, we demonstrated how high energy resolution resonant X-ray emission spectroscopy can be employed to study the charge transfer dynamics in real-time during the temperature-induced oxidation of metallic tungsten.

Submicrometre-area high-energy-resolution photoelectron spectroscopy system

1998 ◽  
Vol 5 (3) ◽  
pp. 1111-1113 ◽  
Author(s):  
Takanori Kiyokura ◽  
Fumihiko Maeda ◽  
Yoshio Watanabe ◽  
Eiji Shigemasa ◽  
Akira Yagishita ◽  
...  
Keyword(s):  
Energy Resolution ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
High Energy Resolution ◽  
Spectral Measurements ◽  
X Ray ◽  
Fermi Edge ◽  
Sample Position ◽  
Instrumental Resolution ◽  
Spectroscopy System

A submicrometre-area photoelectron spectroscopy system that uses a multi-layer-coated Schwarzschild objective as the soft X-ray microbeam optics has been developed. The system is located at an undulator beamline (BL-16U) at the Photon Factory in the High Energy Accelerator Research Organization. By knife-edge measurement, the microbeam size was estimated to be 160 nm at the sample position using a 25–75% criterion. Photoelectron spectral measurements revealed that the Fermi edge width was 0.12 eV, which means that the instrumental resolution was 0.05 eV, after removing the natural broadening of the Fermi edge at room temperature. This system offers both high energy resolution and high spatial resolution.

Soft X‐ray photoelectron spectroscopy with SR at high energy resolution

1991 ◽  
Vol 4 (3) ◽  
pp. 18-19 ◽  
Author(s):  
Eugen Weschke ◽  
Clemens Laubschat ◽  
Thomas Simmons ◽  
Michael Domke ◽  
Gunter Kaindl
Keyword(s):  
Energy Resolution ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
High Energy Resolution ◽  
X Ray

Mn 2p resonant X-ray emission clarifies the redox reaction and charge-transfer effects in LiMn2O4

2019 ◽  
Vol 21 (33) ◽  
pp. 18363-18369 ◽  
Author(s):  
Daisuke Asakura ◽  
Yusuke Nanba ◽  
Eiji Hosono ◽  
Masashi Okubo ◽  
Hideharu Niwa ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Charge Transfer ◽  
Energy Resolution ◽  
Emission Spectroscopy ◽  
High Energy ◽  
High Energy Resolution ◽  
Transfer Effects ◽  
X Ray ◽  
Ion Extraction ◽  
Li Ion

High-energy-resolution soft X-ray emission spectroscopy (XES) was applied to understand the changes in the electronic structure of LiMn2O4 upon Li-ion extraction/insertion.

scholarly journals Probing CuI in homogeneous catalysis using high-energy-resolution fluorescence-detected X-ray absorption spectroscopy

2015 ◽  
Vol 51 (48) ◽  
pp. 9864-9867 ◽  
Author(s):  
Richard C. Walroth ◽  
Jacob W. H. Uebler ◽  
Kyle M. Lancaster
Keyword(s):  
Charge Transfer ◽  
Homogeneous Catalysis ◽  
Energy Resolution ◽  
Catalytic Reaction ◽  
High Energy ◽  
High Energy Resolution ◽  
X Ray ◽  
Ligand Charge Transfer ◽  
X Ray Absorption ◽  
Absorption Features

CuI X-ray absorption features are assigned as metal-to-ligand charge transfer bands. These features facilitate species identification in catalytic reaction mixtures.

X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 799-802 ◽  
Author(s):  
Z. H. Lu ◽  
J.-M. Baribeau ◽  
T. E. Jackman
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Valence Band Maximum ◽  
High Energy Resolution ◽  
Orbit Splitting ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Spin Orbit Splitting ◽  
Spectroscopy Studies

High-energy resolution X-ray photoelectron spectroscopy, with full width at half maximum of 0.41 eV for the Si 2p and of 0.54 eV for the Ge 3d, has been used to study the valence band offsets of different strained Ge layers grown on Si (100). The fractional volume changes in Ge epilayers have been measured by X-ray photoelectron diffraction and are used to correct the valence band maximum shifts caused by strained-induced spin-orbit splitting at the maxima. Band offset values of 0.80, 0.76, and 0.71 eV are found for Si/(Ge5Si5)/Si (100), Si/(Ge4Si4)/Si (100), and Si/(Ge0.5Si0.5)/Si (100) epilayers, respectively.

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