Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

2012 ◽  
Vol 24 (8) ◽  
pp. 1407-1414 ◽  
Author(s):  
Jeong Hwan Han ◽  
Sang Woon Lee ◽  
Seong Keun Kim ◽  
Sora Han ◽  
Woongkyu Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Feeding Time ◽  
Initial Growth

The Cooling Rate Effect on Graphene Synthesis Using Low Pressure Chemical Vapor Deposition

2021 ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Time ◽  
Carbon Source ◽  
Cooling Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Feeding Time ◽  
Process Variables ◽  
Pressure Chemical

Abstract Low-pressure chemical vapor deposition (LPCVD) is the most efficient method to synthesize large-scale, high-quality graphene for many potential applications such as flexible electronics, solar cells, and separation membranes. The quality of LPCVD is affected by process variables including methane/hydrogen (CH4/H2) ratio, time, pressure, temperature, and cooling rate. The cooling rate has been recognized as one of the most important process variables affecting the amount of carbon source, nucleation, reaction time, and thus the quality of the LPCVD. In this research, we investigate the effect of cooling rate on the quality of graphene synthesize by changing the cooling rate and the gas feeding time. Graphene coverage is measured by Raman mapping. It is found that fast cooling rate leads to decreased carbon source reaction time, which in turn results in higher coverage by monolayer graphene. The temperature-dependent gas feeding time corresponding to different cooling rates can be used to properly supply the carbon source onto the copper surface, also leading to a higher graphene coverage.

A Basic Monte Carlo Model of Initiated Chemical Vapor Deposition Using Kinetic Theory

2014 ◽  
Vol 1704 ◽  
Author(s):  
Hayley R. Osman ◽  
Saibal Mitra
Keyword(s):  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Polymer Films ◽  
Vapor Deposition ◽  
Monte Carlo Model ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Initial Growth ◽  
Time Step ◽  
Initiated Chemical Vapor Deposition

ABSTRACTInitiated Chemical Vapor Deposition (iCVD) is a well-known method for depositing polymers that are used in chemical, biological, and electrical applications. It is a variation of hot filament deposition and can used to produce conformal coatings of polymer films at relatively low reaction temperatures. It is also a solventless technique in which thin polymeric films are deposited by introducing controlled ratios of monomer and initiator gasses into the reaction chamber. Low temperatures in the reaction chamber allow the deposition of polymer films on a wide variety of substrates that include biological substrates.We have simulated the growth of a monolayer of polymer films on two-dimensional surfaces using Monte Carlo simulation. We saw the formation of polymer chains over a time scale on the order of microseconds. We have assumed the substrate to be at room temperature while the reactor pressure close of 800 mTorr.The grid on which we have simulated this polymer growth is represented by a 100x100 matrix, on which a series of specialized functions are executed in each time-step, or iteration. These functions can be divided into three categories: population, translation, and polymerization.The goal of this simulation is to observe the initial growth of the iCVD surface reaction. We have obtained favorable results with the simulation and we are now looking to compare these results with experimental results for initiation growth.

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