Ozone Synthesis Using Shielded Sliding Discharge: Effect of Oxygen Content and Positive versus Negative Streamer Mode

2014 ◽  
Vol 53 (31) ◽  
pp. 12305-12311 ◽  
Author(s):  
Muhammad Arif Malik
Keyword(s):  
Oxygen Content ◽  
Ozone Synthesis ◽  
Effect Of Oxygen ◽  
Sliding Discharge ◽  
Streamer Mode

The effect of oxygen content on the turbulent flame speed of ammonia/oxygen/nitrogen expanding flames under elevated pressures

2021 ◽  
Vol 232 ◽  
pp. 111521
Author(s):  
Shixing Wang ◽  
Ayman M. Elbaz ◽  
Zhihua Wang ◽  
William L. Roberts
Keyword(s):  
Oxygen Content ◽  
Turbulent Flame ◽  
Flame Speed ◽  
Turbulent Flame Speed ◽  
Elevated Pressures ◽  
Effect Of Oxygen

Effect of oxygen content on the magnetic and transport properties of Pr0.5Ba0.5MnO3-γ

2000 ◽  
Vol 12 (7) ◽  
pp. L155-L158 ◽  
Author(s):  
I O Troyanchuk ◽  
S V Trukhanov ◽  
H Szymczak ◽  
K Baerner
Keyword(s):  
Transport Properties ◽  
Oxygen Content ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Content on Microstructure and Mechanical Properties of Ti-29Nb-13Ta-4.6Zr Alloy for Biomedical Applications

2008 ◽  
Vol 72 (12) ◽  
pp. 960-964 ◽  
Author(s):  
Masaaki Nakai ◽  
Mitsuo Niinomi ◽  
Toshikazu Akahori ◽  
Hiroshi Ishikawa ◽  
Michiharu Ogawa
Keyword(s):  
Mechanical Properties ◽  
Oxygen Content ◽  
Biomedical Applications ◽  
Microstructure And Mechanical Properties ◽  
Effect Of Oxygen

Computational and experimental investigations on electronic and optical response of oxygenated MoS2

2021 ◽  
Author(s):  
Mubashira Shakeel ◽  
M. Javed Iqbal ◽  
Mammor Iftikhar ◽  
Umer Farooq ◽  
Muhammad Tauseef Qureshi ◽  
...  
Keyword(s):  
Oxygen Content ◽  
Blue Shift ◽  
Visible Range ◽  
Experimental Investigations ◽  
Optical Parameters ◽  
First Principle ◽  
Absorption Phenomenon ◽  
Effect Of Oxygen ◽  
Optical Behavior

Abstract The current study is concerned with the first principle investigations of the oxygenated MoS2 to explore the electronic and optical properties. We consider various oxygen concentrations (MoS2, MoS1.75O0.25, MoS1.5O0.5, MoSO) for the prediction of its impact on parameters using PBE-GGA approximation. A noticeable change in parameters has been observed in the visible regime with the introduction of oxygen content in the MoS2 structure. The results of the electronic properties suggest a string role of Mo d-states, S p-states, and O p-states which, however, show variations for various O concentrations near the Fermi level. In comparison to the absorption trend of pure MoS2, the optical absorption spectra show a blue shift in the visible range. The effect of oxygen can also be seen in the experimentally prepared MoS2 thin films as the variation of optical behavior can be seen. Refractive index decreases from ~2.5 to ~2. Similarly, absorption graphs show a lack of absorption phenomenon as the oxygen content increases. The role of oxygen brings appreciable changes in the optical parameters over the different energy ranges.

scholarly journals The Effect of Oxygen Content in Molten Steel on the Interfacial Tension between Molten Steel and Slag

1979 ◽  
Vol 65 (14) ◽  
pp. 2012-2021 ◽  
Author(s):  
Kazumi OGINO ◽  
Shigeta HARA ◽  
Takashi MIWA ◽  
Shinji KIMOTO
Keyword(s):  
Interfacial Tension ◽  
Oxygen Content ◽  
Molten Steel ◽  
Effect Of Oxygen

Effect of Oxygen Content on Calibration of Portable VOC Instruments

AIHAJ ◽  
1994 ◽  
Vol 55 (11) ◽  
pp. 1084-1086 ◽  
Author(s):  
Robert F. Mouradian ◽  
Jeffrey P. Flannery
Keyword(s):  
Oxygen Content ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3149 ◽  
Author(s):  
Sungju Choi ◽  
Jae-Young Kim ◽  
Hara Kang ◽  
Daehyun Ko ◽  
Jihyun Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Oxygen Content ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Current Stress ◽  
Bias Stress ◽  
Self Heating ◽  
Effect Of Oxygen ◽  
Amorphous Ingazno ◽  
Bottom Gate

The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔVT) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by donor creation in a-IGZO active regions when both current flows and a high lateral electric field were present. Stress-induced ΔVT increased with increasing oxygen content irrespective of the type of stress because oxygen content influenced GI quality, i.e., higher density of GI electron traps, as well as typical direct current (DC) performance like threshold voltage, mobility, and subthreshold swing. It was also found that self-heating became another important mechanism, especially when the vertical electric field and channel current were the same, independent of the oxygen content. The increased ΔVT with oxygen content under positive gate bias stress, positive gate and drain bias stress, and target current stress was consistently explained by considering a combination of the density of GI electron traps, electric field relaxation, and self-heating-assisted electron trapping.

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