Influence of Adsorbate-Induced Charge Screening, Depolarization Factor, Mobile Carrier Concentration, and Defect-Induced Microstrain on the Size Effect of a BaTiO3Nanoparticle

2013 ◽  
pp. 130911155918002 ◽  
Author(s):  
Kyuichi Yasui ◽  
Kazumi Kato
2014 ◽  
Vol 68 (6) ◽  
Author(s):  
Roghaye Mahmoodi ◽  
Toraj Mohammadi ◽  
Mansoor Moghadam

AbstractThe separation of Cd(II) and Ni(II) ions was studied in an aqueous sulphate medium using supported liquid membrane (SLM). D2EHPA/M2EHPA was used as a mobile carrier, microporous hydrophobic PTFE film was used as a solid support for the liquid membrane, and the strip phase was sulphuric acid. The effects of different parameters such as feed concentration, carrier concentration, feed phase pH, and strip phase pH on the separation factor and flux of Cd(II) and Ni(II) ions were studied. The optimum values obtained to achieve the maximum flux were 5.0 for feed pH, 40 vol. % for D2EHPA/M2EHPA concentration in the membrane phase, 0.5 for strip pH, and 0.012 mass % for feed concentration. Under these optimum conditions, the flux values of Cd(II) and Ni(II) were 15.7 × 10−7 kg m−2 s−1 and 2.6 × 10−7 kg m−2 s−1, respectively. The separation factors of Cd(II) over Ni(II) were studied under different experimental conditions. At a carrier concentration of 10 vol. % and feed concentration of 0.012 mass %, the maximum value of 185.1 was obtained for the separation factor of Cd(II) over Ni(II). After 24 h, the percentages of the extracted Cd(II) and Ni(II) were 83.3 % and 0.45 %, respectively.


2020 ◽  
Vol 4 (6) ◽  
pp. 1671-1678
Author(s):  
Ping She ◽  
Jun-sheng Qin ◽  
Heng Rao ◽  
Buyuan Guan ◽  
Jihong Yu

A hollow-structured TiO2 decorated with spatially separated bimetallic cocatalysts (Pd@TiO2@Au) was obtained, which exhibited superior photo-induced charge separation by combining the SPR effect of Au NPs and the smaller size effect of Pd NPs.


Langmuir ◽  
2021 ◽  
Author(s):  
Andrew P. Carpenter ◽  
Marc J. Foster ◽  
Konnor K. Jones ◽  
Geraldine L. Richmond

1993 ◽  
Vol 88 (4) ◽  
pp. 271-274 ◽  
Author(s):  
T. Mertelj ◽  
A. Sundaresan ◽  
L.C. Gupta ◽  
M. Sharon ◽  
D. Mihailović

Author(s):  
J. Wittborn ◽  
R. Weiland ◽  
A. J. Huber ◽  
F. Keilmann ◽  
R. Hillenbrand

Abstract We use ultra-resolving terahertz (THz) near-field microscopy based on THz scattering at atomic force microscope tips to analyze 65-nm technology node transistors. Nanoscale resolution is achieved by THz field confinement at the very tip apex to within 30 nm. Images of semiconductor transistors provide evidence of 40 nm (λ/3000) spatial resolution at 2.54 THz (wavelength λ = 118µm) and demonstrate the simultaneous THz recognition of materials and mobile carriers in a single nanodevice. The mobile carrier contrast can be clearly related to near-field excitation of THz-plasmons in the semiconductor regions. The extraordinary high sensitivity of our microscope provides THz near-field contrasts from less then 100 mobile electrons in the probed volume.


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