Dynamic Stokes Shift of the Time-Resolved Phosphorescence Spectrum of ZnII-Substituted Cytochromec

2013 ◽  
Vol 117 (50) ◽  
pp. 15926-15934 ◽  
Author(s):  
Lynmarie A. Posey ◽  
Ryan J. Hendricks ◽  
Warren F. Beck
Keyword(s):  
Stokes Shift ◽  
Phosphorescence Spectrum ◽  
Time Resolved

scholarly journals Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 796-802 ◽  
Author(s):  
Yong-Hoon Cho ◽  
G. H. Gainer ◽  
J. B. Lam ◽  
J. J. Song ◽  
W Yang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stokes Shift ◽  
Energy Shift ◽  
Peak Position ◽  
Time Resolved ◽  
Temperature Range ◽  
Al Content ◽  
Peak Energy ◽  
Emission Behavior ◽  
Pl Intensity

We present a comprehensive study of the optical characteristics of (Al, In)GaN epilayers measured by photoluminescence (PL), integrated PL intensity, and time-resolved PL spectroscopy. For not only InGaN, but also AlGaN epilayers with large Al content, we observed an anomalous PL temperature dependence: (i) an “S-shaped” PL peak energy shift (decrease-increase-decrease) and (ii) an “inverted S-shaped” full width at half maximum (FWHM) change (increase-decrease-increase) with increasing temperature. Based on time-resolved PL, the S shape (inverted S shape) of the PL peak position (FWHM) as a function of temperature, and the much smaller PL intensity decrease in the temperature range showing the anomalous emission behavior, we conclude that strong localization of carriers occurs in InGaN and even in AlGaN with rather high Al content. We observed that the following increase with increasing Al content in AlGaN epilayers: (i) a Stokes shift between the PL peak energy and the absorption edge, (ii) a redshift of the emission with decay time, (iii) the deviations of the PL peak energy, FWHM, and PL intensity from their typical temperature dependence, and (iv) the corresponding temperature range of the anomalous emission behavior. This indicates that the band-gap fluctuation responsible for these characteristics is due to energy tail states caused by non-random inhomogeneous alloy potential variations enhanced with increasing Al content.

On the large apparent Stokes shift of phthalimides

2019 ◽  
Vol 21 (9) ◽  
pp. 4839-4853 ◽  
Author(s):  
Anna Reiffers ◽  
Christian Torres Ziegenbein ◽  
Luiz Schubert ◽  
Janina Diekmann ◽  
Kristoffer A. Thom ◽  
...  
Keyword(s):  
Steady State ◽  
Absorption Spectroscopy ◽  
Stokes Shift ◽  
Time Resolved Fluorescence ◽  
Time Resolved

The photophysics of N-methylphthalimide (MP) in solution (cyclohexane, ethanol, acetonitrile, and water) was characterized by steady state as well as time resolved fluorescence and absorption spectroscopy.

scholarly journals Time-Resolved Probing of the Nonequilibrium Structural Solvation Dynamics by the Time-Dependent Stokes Shift

2020 ◽  
Vol 124 (27) ◽  
pp. 5717-5722
Author(s):  
Henning Kirchberg ◽  
Michael Thorwart
Keyword(s):  
Stokes Shift ◽  
Time Dependent ◽  
Solvation Dynamics ◽  
Time Resolved

Comparison of time‐resolved fluorescence Stokes shift measurements to a molecular theory of solvation dynamics

1988 ◽  
Vol 89 (2) ◽  
pp. 875-881 ◽  
Author(s):  
Mark Maroncelli ◽  
Graham R. Fleming
Keyword(s):  
Stokes Shift ◽  
Molecular Theory ◽  
Solvation Dynamics ◽  
Time Resolved Fluorescence ◽  
Time Resolved

Mechanism Behind the Apparent Large Stokes Shift in LSSmOrange Investigated by Time-Resolved Spectroscopy

2015 ◽  
Vol 119 (47) ◽  
pp. 14880-14891 ◽  
Author(s):  
Eduard Fron ◽  
Herlinde De Keersmaecker ◽  
Susana Rocha ◽  
Yannick Baeten ◽  
Gang Lu ◽  
...  
Keyword(s):  
Stokes Shift ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Large Stokes Shift

Wavelength- and Time-Resolved Luminescence Spectroscopy for Investigation of the Matrix-Assisted Laser Desorption Process

2002 ◽  
Vol 8 (4) ◽  
pp. 287-293 ◽  
Author(s):  
Carsten Zechmann ◽  
Tassilo Muskat ◽  
Jürgen Grotemeyer
Keyword(s):  
Ionization Energy ◽  
Stokes Shift ◽  
Laser Desorption ◽  
Luminescence Spectroscopy ◽  
Time Resolved ◽  
Fluorescence Measurements ◽  
The Matrix ◽  
Stokes Shifts ◽  
Matrix Assisted Laser ◽  
Matrix Assisted Laser Desorption

This work deals with investigations of fluorescence phenomena during interaction of ultraviolet laser radiation with four substances (2,5-dihydroxybenzoic acid, 3-hydroxypicolinic acid, dithranol and ferulic acid) commonly used as matrices in matrix-assisted laser desorption/ionization (MALDI). Wavelength-resolved fluorescence measurements allowed classification of UV-MALDI matrices on the basis of their Stokes shift. Matrices showing a high Stokes shift dissipated high amounts of laser energy by means of intra- and intermolecular energy transfer processes, hence contributing less to the ionization of analyte compounds. Conversely, matrix substances with a low Stokes shift retained more of the original photonic energy which may then be available for ionization within the matrix or after desorption of molecular species. Therefore matrix compounds can be designated as “hard” (high ionization energy) in the case of small Stokes shifts or “soft” (low ionization energy) in the case of high Stokes shifts. Time-resolved measurements showed fluorescence lifetimes below 5 ns for all four substances.

Luminescence Dynamics and Structural Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diodes

2011 ◽  
Vol 216 ◽  
pp. 445-449
Author(s):  
Zhen Sheng Lee ◽  
Ling Min Kong ◽  
Zhe Chuan Feng ◽  
Gang Li ◽  
Hung Lin Tsai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stokes Shift ◽  
Multiple Quantum Well ◽  
Blue Emission ◽  
Multiple Quantum ◽  
Spectroscopic Techniques ◽  
Time Resolved ◽  
Light Emitting ◽  
Indium Composition ◽  
Measurement Results

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopic techniques. Two typical samples are studied, both consisting of five periods of InGaN wells with different indium compositions of 21% and 24%, respectively. According to the PL and PLE measurement results, large values of activation energy and Stokes’ shift are obtained. This indicates that higher Indium composition results in an increase of composition fluctuation in the InGaN MQW region, showing the stronger carrier localization effect. The lifetime at the low-energy side of the InGaN peaks is longer for higher indium composition, as expected from the larger Stokes shift.

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