Desorption of Al and Phase Transformation of Ti2AlN MAX Thin Film upon Annealing in Ultra-High-Vacuum

2014 ◽  
Vol 118 (36) ◽  
pp. 20927-20939 ◽  
Author(s):  
Zheng Zhang ◽  
Hongmei Jin ◽  
Jianwei Chai ◽  
Lu Shen ◽  
Hwee Leng Seng ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transformation ◽  
High Vacuum ◽  
Ultra High Vacuum

Analysis of a Non-Evaporable Getter of Ti-Al-Zr Thin Film with Enhanced Performance Used for Ultra-High Vacuum Generation

2019 ◽  
Vol 75 (5) ◽  
pp. 373-379
Author(s):  
Muhammad Khalid Alamgir ◽  
M. Ikram ◽  
Ghalib Hussain Mughal ◽  
Ghulam Asghar ◽  
Shafiq ur Rehman ◽  
...  
Keyword(s):  
Thin Film ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum Generation

scholarly journals Precise nanoscale temperature mapping in operational microelectronic devices by use of a phase change material

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Qilong Cheng ◽  
Sukumar Rajauria ◽  
Erhard Schreck ◽  
Robert Smith ◽  
Na Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Phase Change Material ◽  
Heat Dissipation ◽  
Radiation Thermometry ◽  
High Vacuum ◽  
Operating Conditions ◽  
Ultra High Vacuum ◽  
Scanning Thermal Microscopy ◽  
Change Material

AbstractThe microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale hotspots leading to device failures. To understand the reliability impact of the hotspots, the device needs to be tested under the actual operating conditions. Therefore, the development of high-resolution thermometry techniques is required to understand the heat dissipation processes during the device operation. Recently, several thermometry techniques have been proposed, such as radiation thermometry, thermocouple based contact thermometry, scanning thermal microscopy, scanning transmission electron microscopy and transition based threshold thermometers. However, most of these techniques have limitations including the need for extensive calibration, perturbation of the actual device temperature, low throughput, and the use of ultra-high vacuum. Here, we present a facile technique, which uses a thin film contact thermometer based on the phase change material $$Ge_2 Sb_2 Te_5$$ G e 2 S b 2 T e 5 , to precisely map thermal contours from the nanoscale to the microscale. $$Ge_2 Sb_2 Te_5$$ G e 2 S b 2 T e 5 undergoes a crystalline transition at $$\hbox {T}_{{g}}$$ T g with large changes in its electric conductivity, optical reflectivity and density. Using this approach, we map the surface temperature of a nanowire and an embedded micro-heater on the same chip where the scales of the temperature contours differ by three orders of magnitude. The spatial resolution can be as high as 20 nanometers thanks to the continuous nature of the thin film.

Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum

2008 ◽  
Vol 66 (2) ◽  
pp. 171-174 ◽  
Author(s):  
C. Ko ◽  
Y. M. Lee ◽  
H. J. Shin ◽  
M.-C. Jung ◽  
M. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Structural Phase ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Chemical States ◽  
Structural Phase Change

Influence of growth temperature on formation of continuous Ag thin film on ZnO surface by ultra-high vacuum deposition

2009 ◽  
Vol 42 (6) ◽  
pp. 065303 ◽  
Author(s):  
T C Zhang ◽  
Z X Mei ◽  
Y Guo ◽  
Q K Xue ◽  
X L Du
Keyword(s):  
Thin Film ◽  
Growth Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum Deposition

Electronics Application for Fullerenes

1994 ◽  
Vol 349 ◽  
Author(s):  
R.L. McNally ◽  
F R. Brotzen ◽  
A.J. Griffin ◽  
P.J. Loos ◽  
E.V. Barrera
Keyword(s):  
Thin Film ◽  
Applied Voltage ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Concentration Profiles ◽  
Wavelength Dispersive Spectroscopy ◽  
Sem Micrographs ◽  
Noticeable Change ◽  
Metal Semiconductor Metal ◽  
Current Voltage

ABSTRACTThin-film Al-C60-Al trilayered structures were sublimated under ultra high vacuum (UHV) conditions for the purpose of investigating their current-voltage (I-V) properties. These metal-semiconductor-metal devices exhibited rapid and irreversible drop in resistance of about two orders of magnitude under an applied voltage of 0.67 to 0.75V. Approximate initial and final resistances were 1050 Ω and 8 Ω respectively. Wavelength Dispersive Spectroscopy (WDS) indicated no noticeable change in phase of the fullerene inter-layer after the irreversible drop in resistance. These results, SEM micrographs and concentration profiles were concordant with diffusion of top layer Al through the fullerene layer as the most likely cause of the change in resistance.

UHV In-Situ Electron Microscopy of thin Film Growth

1976 ◽  
Vol 34 ◽  
pp. 442-443
Author(s):  
K. Yagi ◽  
K. Takayanagi ◽  
K. Kobayashi ◽  
G. Honjo
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
High Vacuum ◽  
Dendritic Morphology ◽  
Thin Film Growth ◽  
Ultra High Vacuum ◽  
In Situ Studies ◽  
In Situ Electron Microscopy ◽  
Dendritic Shape

An ultra-high vacuum (UHV) electron microscope was constructed for special purpose of in-situ studies of thin film growth and some experimental results have already been published (1). Here, recent results are described.1. Au/graphite (nucleation and growth mode). Growths of Au in a dendritic shape at 150°C were observed on graphite. The dendritic morphology was said to be characteristic of the Au growth on UHV cleaved graphite (2). We cleaned an air cleaved surface by heating in UHV EM (10-8 torr) for 20 minutes prior to the Au deposition. The dendritic shape growth in Fig. 1, therefore, indicates that the graphite surface became clean with the present heat treatment and that the in-situ studies were done under clean conditions.

TEM study of chemically converted SiC thin film on nanometer curved Si surface

1993 ◽  
Vol 51 ◽  
pp. 818-819
Author(s):  
A. N. Stepanova ◽  
J. Liu ◽  
K. N. Christensen ◽  
U. T. Son ◽  
K. J. Bachmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Surface ◽  
Flat Surface ◽  
Mechanical Strain ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Microelectronic Devices ◽  
Vacuum Microelectronic ◽  
Field Emission Cathodes

Silicon whiskers with nanometer curvature have a variety of applications such as probes in STM and AFM, or field emission cathodes for vacuum microelectronic devices. For these and other applications it is essential to stabilize the sharply curved silicon surface during usage. Carburization of the silicon surface seems to be a very suitable solution to this problem, since SiC crystals have excellent physical properties and are chemically quite inert. There have been a number of reports of the carburization of flat surface silicon wafers by chemical reaction using both CVD and MBE methods. However, to carburize while maintaining a very sharp silicon tip is extremely difficult. It is also desirable to carburize only a very thin layer, so as to avoid excessive mechanical strain arising from the large difference (∼20%) in lattice parameters.Our carburizations were carried out in a turbo-pumped ultra-high vacuum system. The silicon specimens were oxidation sharpened and cleaned in a buffered HF solution.

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