Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. The multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed-potential deposition technique. The thickness of the Cu layer was adjusted from ca. 2 to 4 nm while that of the Co layer was regulated from ca. 13 to 51 nm by controlling the pulsed potential parameters. To get a Co/Cu multilayered nanowire in an electrochemical in-situ contact with a sputter-deposited Au thin layer, the pulsed potential deposition was continued up to ca. 5000 cycles until the nanowire reached out toward the surface of AAO template. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ca. 23.5% at room temperature in Co/Cu multilayered nanowires with ca. 3500 Co/Cu bilayers (Cu: 1.4 nm and Co: 18.8 nm). When decreasing the thickness of Co layer, the CPP-GMR value increased due to the Valet–Fert model in the long spin diffusion limit.
In-Situ Formation of Crystallographically-Oriented Semiconductor Nanowire Arrays via Selective Vaporization